{"title":"SiC垂直功率DMOSFET结构的基本方程建模","authors":"P. Lungu","doi":"10.1109/SMICND.1996.557383","DOIUrl":null,"url":null,"abstract":"The most important parameters for 6H-SiC and 3C-SiC are extracted from the literature and implemented in an original vertical DMOSFET modeling program using the fundamental set of equations that account for the MOSFET characteristics. A comparison of current-voltage characteristics and specific on resistance for different values of breakdown voltage at two significant temperatures for 6H-SiC, 3C-SiC and Si is provided in this paper.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"155 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Modelling of SiC vertical power DMOSFET structure using the fundamental MOSFET's set of equations\",\"authors\":\"P. Lungu\",\"doi\":\"10.1109/SMICND.1996.557383\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The most important parameters for 6H-SiC and 3C-SiC are extracted from the literature and implemented in an original vertical DMOSFET modeling program using the fundamental set of equations that account for the MOSFET characteristics. A comparison of current-voltage characteristics and specific on resistance for different values of breakdown voltage at two significant temperatures for 6H-SiC, 3C-SiC and Si is provided in this paper.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"155 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557383\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modelling of SiC vertical power DMOSFET structure using the fundamental MOSFET's set of equations
The most important parameters for 6H-SiC and 3C-SiC are extracted from the literature and implemented in an original vertical DMOSFET modeling program using the fundamental set of equations that account for the MOSFET characteristics. A comparison of current-voltage characteristics and specific on resistance for different values of breakdown voltage at two significant temperatures for 6H-SiC, 3C-SiC and Si is provided in this paper.
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