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2011 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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Analytical approximation of complex band structures for band-to-band tunneling models 带对带隧道模型中复杂带结构的解析逼近
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035076
X. Guan, Donghyun Kim, K. Saraswat, H. Wong
{"title":"Analytical approximation of complex band structures for band-to-band tunneling models","authors":"X. Guan, Donghyun Kim, K. Saraswat, H. Wong","doi":"10.1109/SISPAD.2011.6035076","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035076","url":null,"abstract":"A unified analytical expression is developed to accurately describe the complex band structures in commonly used diamond and zinc-blende semiconductors. Fitting the model to the numerical complex band structures shows a significantly improved accuracy as compared with the effective mass approximation. The model is used to study the band-to-band tunneling in Si, Ge, GaAs and GaSb, with a maximum error of <1.4% compared to the numerical band structures.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"279 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123164189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A smart approach for process variation correlation modeling 过程变化相关建模的一种智能方法
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6034966
Chung-Kai Lin, Cheng Hsiao, W. Chan, M. Jeng
{"title":"A smart approach for process variation correlation modeling","authors":"Chung-Kai Lin, Cheng Hsiao, W. Chan, M. Jeng","doi":"10.1109/SISPAD.2011.6034966","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6034966","url":null,"abstract":"Process variation has become a serious concern in nanometer technologies. Designs with competitive margins rely on well-characterized statistical models, which must predict the magnitude and scalability of variability accurately. In this paper, we propose a novel approach in creating the statistical models, which tracks the global variation correlation among logic and SRAM devices, hence more realistic. The simulation result is verified with TSMC N28 technology silicon. Two types of circuits, SRAM Vccmin calibration and a SRAM tracking circuit with logic, are discussed in this paper. Different simulation setups are applied on these two circuits to understand the impact of device correlation for the SRAM performance and design margin setting.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125994596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Bridge-function pseudospectral method for quantum mechanical simulation of nano-scaled devices 纳米器件量子力学模拟的桥函数伪谱方法
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035032
Y. Saitou, T. Nakamori, S. Souma, M. Ogawa
{"title":"Bridge-function pseudospectral method for quantum mechanical simulation of nano-scaled devices","authors":"Y. Saitou, T. Nakamori, S. Souma, M. Ogawa","doi":"10.1109/SISPAD.2011.6035032","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035032","url":null,"abstract":"In this paper we show the effectiveness and powerfulness of a pseudospectral method (PSM) with newly developed bridge-functions, which ensure the continuity of physical quantities, for the solution of the 3D Schrödinger equation, Poisson's equation, in addition, non-equilibrium Green's function (NEGF) on equal footing with high accuracy and negligible computational overheads. By comparing with the results of the conventional finite difference method (FDM) with same numbers of mesh, the present method is found to be 60 times faster with higher accuracy.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121618658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sticking coefficient of hydrogen radicals on ArF photoresist estimated by parallel plate structure in conjunction with numerical analysis 平行板结构与数值分析相结合估算ArF光刻胶上氢自由基的粘附系数
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035090
A. Malinowski, M. Sekine, M. Hori, K. Ishikawa, H. Kondo, Toshiya Suzuki, T. Takeuchi, H. Yamamoto, A. Jakubowski, L. Lukasiak, D. Tomaszewski
{"title":"Sticking coefficient of hydrogen radicals on ArF photoresist estimated by parallel plate structure in conjunction with numerical analysis","authors":"A. Malinowski, M. Sekine, M. Hori, K. Ishikawa, H. Kondo, Toshiya Suzuki, T. Takeuchi, H. Yamamoto, A. Jakubowski, L. Lukasiak, D. Tomaszewski","doi":"10.1109/SISPAD.2011.6035090","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035090","url":null,"abstract":"Investigation of radicals kinetic behavior and estimation of radical sticking coefficient become indispensable for establishing plasma processing control by its internal parameters. This approach is required for plasma processing of single-nanometer gate length field effect transistors and 3-diemnsional gates in particular. In our works we have developed new technique for radicals kinetic behavior investigation and its sticking coefficient estimation. Our approach is based on application of parallel plate structure in conjunction with numerical analysis. This approach allows for radicals behavior investigation apart from ions and ultraviolet photons. Moreover this approach allows for analysis role of radical direct and indirect fluxes. By comparison of measured profile thickness and simulated stuck radicals profile we were able to estimate hydrogen radical sticking probability to ArF photoresist.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116713421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs 高k SiGe mosfet中NBTI的量子力学建模
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035036
P. Hehenberger, W. Goes, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser
{"title":"Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs","authors":"P. Hehenberger, W. Goes, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser","doi":"10.1109/SISPAD.2011.6035036","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035036","url":null,"abstract":"Degradation and recovery of a multi-layer high-k SiGe pMOSFET due to the negative bias temperature instability (NBTI) is modeled on the basis of a refined non-radiative multi-phonon (NMP) theory. As the SiGe-layer forms a quantum-well inside the substrate, quantum mechanical effects like subbands are incorporated into the model. In combination with a distribution of defects featuring different energies, barrier heights, and positions inside the oxide, a large range of accelerated stress conditions can be very accurately described. The defects accounting for the recoverable part of the NBTI degradation are finally identified as switching traps.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117003415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Numerical methods for a quantum energy transport model arising in scaled MOSFETs 缩放mosfet中量子能量输运模型的数值方法
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035030
Shohiro Sho, S. Odanaka
{"title":"Numerical methods for a quantum energy transport model arising in scaled MOSFETs","authors":"Shohiro Sho, S. Odanaka","doi":"10.1109/SISPAD.2011.6035030","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035030","url":null,"abstract":"This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128077104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study 金属/硅界面结构紊乱引起的肖特基势垒变化:第一性原理研究
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035027
K. Kobinata, T. Nakayama
{"title":"Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study","authors":"K. Kobinata, T. Nakayama","doi":"10.1109/SISPAD.2011.6035027","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035027","url":null,"abstract":"Schottky-barrier changes by structural disorders are studied using the first-principles calculation and adopting Au/Si interface. It is shown that the structural disorders prefer to locate near the interface, but the penetration depth of the MIGS into Si is about 5 Si layers similar to clean interface even when disorders exist Reflecting such penetration, Schottky barrier for holes shows little change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials due to the presence of Si dangling bonds.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129375307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of plasma immersion ion implantation 等离子体浸没离子注入的模拟
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6034962
A. Burenkov, Peter Pichler, Jurgen Lorenz, Y. Spiegel, J. Duchaine, F. Torregrosa
{"title":"Simulation of plasma immersion ion implantation","authors":"A. Burenkov, Peter Pichler, Jurgen Lorenz, Y. Spiegel, J. Duchaine, F. Torregrosa","doi":"10.1109/SISPAD.2011.6034962","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6034962","url":null,"abstract":"Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1015 to 1017 cm−2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision approach for ion implantation. A good reproduction of the measured boron profiles was obtained using a double-exponential energetic spectrum of the boron ions.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133013087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Exploring MOL design options for a 20nm CMOS technology using TCAD 利用TCAD探索20nm CMOS技术的MOL设计选项
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035059
A. Scholze, S. Furkay, Seong-Dong Kim, Sameer H. Jain
{"title":"Exploring MOL design options for a 20nm CMOS technology using TCAD","authors":"A. Scholze, S. Furkay, Seong-Dong Kim, Sameer H. Jain","doi":"10.1109/SISPAD.2011.6035059","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035059","url":null,"abstract":"A mixed-mode simulation framework is presented to study the AC performance of a 20nm bulk CMOS technology with respect to various options for contact design at the middle-of-line design level. These simulations combine the predictive capabilities of a calibrated two-dimensional TCAD model for a MOSFET with three-dimensional simulations for the layout dependent parasitic capacitances to extract the characteristic parameters of a multi-stage ring-oscillator circuit, such as the ring delay, and the effective switching capacitance. Significant performance degradation is predicted comparing the simulation results for a conventional contact design versus a typical 20nm design considering raised source-drain and a contact bar.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134244731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling temperature and bias stress effects on threshold voltage of a-Si:H TFTs for gate driver circuit simulation 模拟温度和偏置应力对栅极驱动电路中a-Si:H TFTs阈值电压的影响
2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI: 10.1109/SISPAD.2011.6035072
Cheng-Han Shen, Yiming Li, I. Lo, P. Lin, S. Chung
{"title":"Modeling temperature and bias stress effects on threshold voltage of a-Si:H TFTs for gate driver circuit simulation","authors":"Cheng-Han Shen, Yiming Li, I. Lo, P. Lin, S. Chung","doi":"10.1109/SISPAD.2011.6035072","DOIUrl":"https://doi.org/10.1109/SISPAD.2011.6035072","url":null,"abstract":"Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFT) have been important device in modern display panel production. In this paper, we study amorphous silicon thin-film-transistor (TFT) degradation under temperature and bias stresses. Rensselear polytechnic institute (RPI) model is widely used for circuit simulation of a-Si:H TFTs, but the temperature (T = −20 − +65°C) and bias stress effects are not considered in the RPI model. The parameters of sub-threshold in the RPI model with temperature and bias stress effects are explored and formulated with the measured I–V data. The results can be used together with the existing model, and thus can describe the temperature dependent characteristics of a-Si:H TFTs well. A 14 a-Si:H TFTs integrated gate (ASG) driver circuit is simulated and tested using the modified RPI model card. The simulations predict the temperature effect on the dynamic properties of ASG circuit and power consumption.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124724274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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