Simulation of plasma immersion ion implantation

Abstract

Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1015 to 1017 cm−2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision approach for ion implantation. A good reproduction of the measured boron profiles was obtained using a double-exponential energetic spectrum of the boron ions.