{"title":"Numerical methods for a quantum energy transport model arising in scaled MOSFETs","authors":"Shohiro Sho, S. Odanaka","doi":"10.1109/SISPAD.2011.6035030","DOIUrl":null,"url":null,"abstract":"This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2011.6035030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.