金属/硅界面结构紊乱引起的肖特基势垒变化:第一性原理研究

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035027

K. Kobinata, T. Nakayama

{"title":"金属/硅界面结构紊乱引起的肖特基势垒变化:第一性原理研究","authors":"K. Kobinata, T. Nakayama","doi":"10.1109/SISPAD.2011.6035027","DOIUrl":null,"url":null,"abstract":"Schottky-barrier changes by structural disorders are studied using the first-principles calculation and adopting Au/Si interface. It is shown that the structural disorders prefer to locate near the interface, but the penetration depth of the MIGS into Si is about 5 Si layers similar to clean interface even when disorders exist Reflecting such penetration, Schottky barrier for holes shows little change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials due to the presence of Si dangling bonds.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study\",\"authors\":\"K. Kobinata, T. Nakayama\",\"doi\":\"10.1109/SISPAD.2011.6035027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Schottky-barrier changes by structural disorders are studied using the first-principles calculation and adopting Au/Si interface. It is shown that the structural disorders prefer to locate near the interface, but the penetration depth of the MIGS into Si is about 5 Si layers similar to clean interface even when disorders exist Reflecting such penetration, Schottky barrier for holes shows little change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials due to the presence of Si dangling bonds.\",\"PeriodicalId\":264913,\"journal\":{\"name\":\"2011 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2011.6035027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2011.6035027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用Au/Si界面，采用第一性原理计算方法研究了结构失序引起的肖特基势垒变化。结果表明，结构紊乱倾向于位于界面附近，但即使存在紊乱，MIGS对Si的穿透深度也在与清洁界面相似的5层Si层左右。反映出这种穿透性，在Si空位和Au取代的情况下，孔的Schottky势垒变化不大，而在Si和Au间隙的情况下，由于Si悬空键的存在，孔的Schottky势垒增加。

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Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study

Schottky-barrier changes by structural disorders are studied using the first-principles calculation and adopting Au/Si interface. It is shown that the structural disorders prefer to locate near the interface, but the penetration depth of the MIGS into Si is about 5 Si layers similar to clean interface even when disorders exist Reflecting such penetration, Schottky barrier for holes shows little change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials due to the presence of Si dangling bonds.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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