{"title":"缩放mosfet中量子能量输运模型的数值方法","authors":"Shohiro Sho, S. Odanaka","doi":"10.1109/SISPAD.2011.6035030","DOIUrl":null,"url":null,"abstract":"This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical methods for a quantum energy transport model arising in scaled MOSFETs\",\"authors\":\"Shohiro Sho, S. Odanaka\",\"doi\":\"10.1109/SISPAD.2011.6035030\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.\",\"PeriodicalId\":264913,\"journal\":{\"name\":\"2011 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2011.6035030\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2011.6035030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical methods for a quantum energy transport model arising in scaled MOSFETs
This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET are discussed. The QET model allows simulations of quantum confinement transport, and nonlocal and hot-carrier effects in scaled MOSFETs.