2009 Proceedings of ESSCIRC最新文献_第10页

A 60GHz 65nm CMOS RMS power detector for antenna impedance mismatch detection 用于天线阻抗失配检测的60GHz 65nm CMOS RMS功率检测器

2009 Proceedings of ESSCIRC Pub Date : 2009-11-10 DOI: 10.1109/ESSCIRC.2009.5326027

J. Gorisse, A. Cathelin, A. Kaiser, E. Kerhervé

引用次数: 35

647 MHz, 0.642pJ/block/cycle 65nm self synchronous FPGA 647 MHz, 0.642pJ/块/周期65nm自同步FPGA

2009 Proceedings of ESSCIRC Pub Date : 2009-11-10 DOI: 10.1109/ESSCIRC.2009.5326010

B. Devlin, MyeongGyu Jeong, T. Nakura, M. Ikeda, K. Asada

引用次数: 7

A 1.0 mW, 71 dB SNDR, −1.8 dBFS input swing, fourth-order ΣΔ interface circuit for MEMS microphones 用于MEMS麦克风的1.0 mW, 71 dB SNDR，−1.8 dBFS输入摆幅，四阶ΣΔ接口电路

2009 Proceedings of ESSCIRC Pub Date : 2009-11-10 DOI: 10.1109/ESSCIRC.2009.5325950

Luca Picolli, M. Grassi, Luca Rosson, P. Malcovati, A. Fornasari

引用次数: 10

An integrated Shunt-LDO regulator for serial powered systems 用于串行供电系统的集成分流ldo稳压器

2009 Proceedings of ESSCIRC Pub Date : 2009-11-10 DOI: 10.1109/ESSCIRC.2009.5325974

M. Karagounis, D. Arutinov, M. Barbero, F. Hügging, H. Krueger, N. Wermes

{"title":"An integrated Shunt-LDO regulator for serial powered systems","authors":"M. Karagounis, D. Arutinov, M. Barbero, F. Hügging, H. Krueger, N. Wermes","doi":"10.1109/ESSCIRC.2009.5325974","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2009.5325974","url":null,"abstract":"In this paper, a new type of regulator is proposed for integration in ASICs used in serially powered systems. In the serial powering scheme, modules are placed in series and fed by a constant current source to reduce the IR drop on the cables which increases powering efficiency. At the module level the needed supply voltages are generated redundantly out of the current supply by several parallel operating ASICs with integrated regulation circuitry. A Shunt-LDO regulator has been developed to allow robust and redundant regulator operation and the generation of different supply voltages by parallel placed devices. The Shunt-LDO regulator scheme combines the capability of Low Drop-Out regulators to generate a constant supply voltage with the feature of shunt regulators to assure a constant current flow through the device. The Shunt-LDO regulator has been developed for application in the framework of next generation hybrid pixel detectors used in high energy physics experiments. This circuit has been prototyped in a 130nm CMOS technology, capable of generating voltages in a range of 1.2-1.5V with a minimum drop out voltage of 200mV. The maximum shunt current is 500mA with a load regulation factor corresponding to an output impedance of 30mΩ.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"12 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113957651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 58

An oscilloscope array for high-impedance device characterization 一种用于高阻抗器件表征的示波器阵列

2009 Proceedings of ESSCIRC Pub Date : 2009-11-01 DOI: 10.1109/ESSCIRC.2009.5325935

Fred Chen, A. Chandrakasan, V. Stojanović

引用次数: 6

A 200 µA duty-cycled PLL for wireless sensor nodes 用于无线传感器节点的200µA占空环锁相环

2009 Proceedings of ESSCIRC Pub Date : 2009-09-14 DOI: 10.1109/ESSCIRC.2009.5325979

S. Drago, D. Leenaerts, B. Nauta, F. Sebastiano, K. Makinwa, L. Breems

引用次数: 4

RFID, where are they? RFID，它们在哪里?

2009 Proceedings of ESSCIRC Pub Date : 2009-09-01 DOI: 10.1109/ESSCIRC.2009.5325928

W. Dehaene, G. Gielen, M. Steyaert, Hans Danneels, V. Desmedt, C. D. Roover, Z. Li, M. Verhelst, N. V. Helleputte, S. Radioma, C. Walravensa, L. Pleysier

引用次数: 14

A 0.4-1.4V 24MHz fully integrated 33µW, 104ppm/V supply-independent oscillator for RFIDs 一个0.4-1.4V 24MHz完全集成33µW, 104ppm/V电源无关的rfid振荡器

2009 Proceedings of ESSCIRC Pub Date : 2009-09-01 DOI: 10.1109/ESSCIRC.2009.5325966

V. D. Smedt, W. Dehaene, G. Gielen

引用次数: 18

Performance, reliability, radiation effects, and aging issues in microelectronics — from atomic-scale physics to engineering-level modeling 性能，可靠性，辐射效应，老化问题在微电子-从原子尺度物理到工程级建模

2009 Proceedings of ESSCIRC Pub Date : 2009-05-01 DOI: 10.1109/ESSCIRC.2009.5325931

S. Pantelides, L. Tsetseris, M. Beck, S. Rashkeev, G. Hadjisavvas, I. Batyrev, B. Tuttle, A. Marinopoulos, X. Zhou, D. Fleetwood, peixiong zhao

{"title":"Performance, reliability, radiation effects, and aging issues in microelectronics — from atomic-scale physics to engineering-level modeling","authors":"S. Pantelides, L. Tsetseris, M. Beck, S. Rashkeev, G. Hadjisavvas, I. Batyrev, B. Tuttle, A. Marinopoulos, X. Zhou, D. Fleetwood, peixiong zhao","doi":"10.1109/ESSCIRC.2009.5325931","DOIUrl":"https://doi.org/10.1109/ESSCIRC.2009.5325931","url":null,"abstract":"The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122557676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

Fast stability analysis of large-scale SRAM arrays and the impact of NBTI degradation 大规模SRAM阵列的快速稳定性分析及NBTI退化的影响

2009 Proceedings of ESSCIRC Pub Date : 1900-01-01 DOI: 10.1109/esscirc.2009.5325952

S. Drapatz, T. Fischer, K. Hofmann, E. Amirante, P. Huber, M. Ostermayr, G. Georgakos, D. Schmitt-Landsiedel

引用次数: 5