Luca Picolli, M. Grassi, Luca Rosson, P. Malcovati, A. Fornasari
{"title":"用于MEMS麦克风的1.0 mW, 71 dB SNDR,−1.8 dBFS输入摆幅,四阶ΣΔ接口电路","authors":"Luca Picolli, M. Grassi, Luca Rosson, P. Malcovati, A. Fornasari","doi":"10.1109/ESSCIRC.2009.5325950","DOIUrl":null,"url":null,"abstract":"In this paper a large input swing integrated interface circuit for MEMS microphones is presented. It consists of an high impedance input buffer followed by a multi-bit (12-levels) analog second order ΣΔ modulator and a fully-digital single-bit fourth-order ΣΔ modulator. The circuit, supplied with 3.3V, exhibits a current consumption of 215 µA for the analog part and 95 µA for the digital part. The measured signal-to-noise and distortion ratio (SNDR) is 71 dB, with an input signal amplitude as large as −1.8 dB with respect to full-scale, obtained thanks to the use of a feed-forward technique, which relaxes the voltage swing requirements of the operational amplifiers. The test chip fabricated in a 0.35 µm CMOS occupies an area of 3 mm2 including pads.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A 1.0 mW, 71 dB SNDR, −1.8 dBFS input swing, fourth-order ΣΔ interface circuit for MEMS microphones\",\"authors\":\"Luca Picolli, M. Grassi, Luca Rosson, P. Malcovati, A. Fornasari\",\"doi\":\"10.1109/ESSCIRC.2009.5325950\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a large input swing integrated interface circuit for MEMS microphones is presented. It consists of an high impedance input buffer followed by a multi-bit (12-levels) analog second order ΣΔ modulator and a fully-digital single-bit fourth-order ΣΔ modulator. The circuit, supplied with 3.3V, exhibits a current consumption of 215 µA for the analog part and 95 µA for the digital part. The measured signal-to-noise and distortion ratio (SNDR) is 71 dB, with an input signal amplitude as large as −1.8 dB with respect to full-scale, obtained thanks to the use of a feed-forward technique, which relaxes the voltage swing requirements of the operational amplifiers. The test chip fabricated in a 0.35 µm CMOS occupies an area of 3 mm2 including pads.\",\"PeriodicalId\":258889,\"journal\":{\"name\":\"2009 Proceedings of ESSCIRC\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Proceedings of ESSCIRC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2009.5325950\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Proceedings of ESSCIRC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2009.5325950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.0 mW, 71 dB SNDR, −1.8 dBFS input swing, fourth-order ΣΔ interface circuit for MEMS microphones
In this paper a large input swing integrated interface circuit for MEMS microphones is presented. It consists of an high impedance input buffer followed by a multi-bit (12-levels) analog second order ΣΔ modulator and a fully-digital single-bit fourth-order ΣΔ modulator. The circuit, supplied with 3.3V, exhibits a current consumption of 215 µA for the analog part and 95 µA for the digital part. The measured signal-to-noise and distortion ratio (SNDR) is 71 dB, with an input signal amplitude as large as −1.8 dB with respect to full-scale, obtained thanks to the use of a feed-forward technique, which relaxes the voltage swing requirements of the operational amplifiers. The test chip fabricated in a 0.35 µm CMOS occupies an area of 3 mm2 including pads.