Luca Picolli, M. Grassi, Luca Rosson, P. Malcovati, A. Fornasari
{"title":"A 1.0 mW, 71 dB SNDR, −1.8 dBFS input swing, fourth-order ΣΔ interface circuit for MEMS microphones","authors":"Luca Picolli, M. Grassi, Luca Rosson, P. Malcovati, A. Fornasari","doi":"10.1109/ESSCIRC.2009.5325950","DOIUrl":null,"url":null,"abstract":"In this paper a large input swing integrated interface circuit for MEMS microphones is presented. It consists of an high impedance input buffer followed by a multi-bit (12-levels) analog second order ΣΔ modulator and a fully-digital single-bit fourth-order ΣΔ modulator. The circuit, supplied with 3.3V, exhibits a current consumption of 215 µA for the analog part and 95 µA for the digital part. The measured signal-to-noise and distortion ratio (SNDR) is 71 dB, with an input signal amplitude as large as −1.8 dB with respect to full-scale, obtained thanks to the use of a feed-forward technique, which relaxes the voltage swing requirements of the operational amplifiers. The test chip fabricated in a 0.35 µm CMOS occupies an area of 3 mm2 including pads.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Proceedings of ESSCIRC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2009.5325950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
In this paper a large input swing integrated interface circuit for MEMS microphones is presented. It consists of an high impedance input buffer followed by a multi-bit (12-levels) analog second order ΣΔ modulator and a fully-digital single-bit fourth-order ΣΔ modulator. The circuit, supplied with 3.3V, exhibits a current consumption of 215 µA for the analog part and 95 µA for the digital part. The measured signal-to-noise and distortion ratio (SNDR) is 71 dB, with an input signal amplitude as large as −1.8 dB with respect to full-scale, obtained thanks to the use of a feed-forward technique, which relaxes the voltage swing requirements of the operational amplifiers. The test chip fabricated in a 0.35 µm CMOS occupies an area of 3 mm2 including pads.