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2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)最新文献

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Dual Approach for the characterization of the thermal impedance using 3omega and thermoreflectance methods 使用3omega和热反射方法表征热阻抗的双重方法
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160092
A. Jakani, R. Sommet, J. Nallatamby, C. Charbonniaud
{"title":"Dual Approach for the characterization of the thermal impedance using 3omega and thermoreflectance methods","authors":"A. Jakani, R. Sommet, J. Nallatamby, C. Charbonniaud","doi":"10.1109/INMMiC46721.2020.9160092","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160092","url":null,"abstract":"Two different methods were performed in order to fully characterize the thermal impedance ZTH of a micro heater sample of 5μm wide and 500μm length. The first measurement method proposed in this work was carried out using the Thermo Reflectance (TR) technique. The second one was performed using the 3 ω method. All the measurements ensure the extraction of the same RTH around 107°C/W. Moreover, a 3D finite elements simulation has been performed to validate the measurement approach. Finally, first TR results for a GaN HEMTof 8x50μm from UMS foundry are given in this paper.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127537911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Load Modulated Balanced Amplifier with Linear Gain Response and Wide High-Efficiency Output Power Back-Off Region 具有线性增益响应和宽高效率输出功率回退区的负载调制平衡放大器
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160205
Kauser Chaudhry, R. Quaglia, S. Cripps
{"title":"A Load Modulated Balanced Amplifier with Linear Gain Response and Wide High-Efficiency Output Power Back-Off Region","authors":"Kauser Chaudhry, R. Quaglia, S. Cripps","doi":"10.1109/INMMiC46721.2020.9160205","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160205","url":null,"abstract":"This paper presents a new mode of operation for load modulated balanced amplifiers that overcomes two limitations of the original technique by providing a linear gain response and a wide power back-off region with high efficiency. Compared to Doherty power amplifiers, this technique still maintains some of the bandwidth advantages and the inherent design simplicity typically associated with the load modulated balanced amplifier. A prototype has been realized and characterized with single-tone measurements. At 1850MHz and 2150 MHz, it shows a maximum output power in excess of 250W, and a power added efficiency greater than 45%, at 9 dB back-off, with a gain variation vs. power of less than 2 dB.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126310053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Design of a Ka-Band Single-Chip Front-End based on a 100 nm GaN-on-Si technology 基于100纳米GaN-on-Si技术的ka波段单芯片前端设计
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160306
L. Pace, F. Costanzo, P. Longhi, W. Ciccognani, S. Colangeli, A. Suriani, R. Leblanc, E. Limiti
{"title":"Design of a Ka-Band Single-Chip Front-End based on a 100 nm GaN-on-Si technology","authors":"L. Pace, F. Costanzo, P. Longhi, W. Ciccognani, S. Colangeli, A. Suriani, R. Leblanc, E. Limiti","doi":"10.1109/INMMiC46721.2020.9160306","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160306","url":null,"abstract":"In this paper, a Single-Chip Front-End (SCFE) operating in Ka-Band (35–36.5 GHz) is presented. Chip is designed exploiting a GaN-on-Si technology featured by 100nm gate length provided by OMMIC foundry. This MMIC integrates high-power, low-noise amplification functionalities enabled by a couple of synchronous Single-Pole Double-Throw (SPDT) switches, occupying a total surface of 4.7×3 mm2. Transmit-mode (Tx) performance present a 36 dBm output power, a Power Added Efficiency (PAE) higher than 25% and a 20dB power gain at 2 dB compression. Regarding the receiving-mode (Rx) performance, a sub-3.2 dB Noise Figure (NF) and a linear gain just below the 32 dB level is obtained, with a I/O matching better than 20 dB, as well.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133723015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
INMMiC 2020 TOC
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/inmmic46721.2020.9160039
{"title":"INMMiC 2020 TOC","authors":"","doi":"10.1109/inmmic46721.2020.9160039","DOIUrl":"https://doi.org/10.1109/inmmic46721.2020.9160039","url":null,"abstract":"","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"67 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114051944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
INMMiC 2020 Author List INMMiC 2020作者名单
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/inmmic46721.2020.9160102
{"title":"INMMiC 2020 Author List","authors":"","doi":"10.1109/inmmic46721.2020.9160102","DOIUrl":"https://doi.org/10.1109/inmmic46721.2020.9160102","url":null,"abstract":"","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128668686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
D-Band Balanced PA with Wideband Performance in BiCMOS Technology BiCMOS技术中具有宽带性能的d波段平衡PA
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160324
Abdul Ali, J. Yun, H. Ng, D. Kissinger, F. Giannini, P. Colantonio
{"title":"D-Band Balanced PA with Wideband Performance in BiCMOS Technology","authors":"Abdul Ali, J. Yun, H. Ng, D. Kissinger, F. Giannini, P. Colantonio","doi":"10.1109/INMMiC46721.2020.9160324","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160324","url":null,"abstract":"This paper presents the design of a balanced power amplifier (PA) using a 130-nm SiGe BiCMOS process. The PA consists of three stages, each based on cascode topology. The design of the PA was optimized using low-Q matching networks for the D-band applications. The results based on EM-simulation of the PA, with assistance of vbic and hicum models for the transistor, demonstrate an average peak gain of 26.5 dB with the 3-dB bandwidth higher than 80 GHz. In terms of large-signal, the PA provides an output power and PAE larger than 14 dBm, and 4 percent, respectively, in the D-band. Moreover, it provides an output power greater than 13 dBm at 110–190 GHz. The PA is highly suitable to drive frequency multipliers for the development of broadband sub-THz signal sources. The future work includes measurement of the PA.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123420404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
INMMiC 2020 Copyright Page INMMiC 2020版权页面
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/inmmic46721.2020.9160125
{"title":"INMMiC 2020 Copyright Page","authors":"","doi":"10.1109/inmmic46721.2020.9160125","DOIUrl":"https://doi.org/10.1109/inmmic46721.2020.9160125","url":null,"abstract":"","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129385610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transient Pulsed S-Parameters for Trapping Characterization 瞬态脉冲s -诱捕表征参数
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160297
João L. Gomes, L. Nunes, J. Pedro
{"title":"Transient Pulsed S-Parameters for Trapping Characterization","authors":"João L. Gomes, L. Nunes, J. Pedro","doi":"10.1109/INMMiC46721.2020.9160297","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160297","url":null,"abstract":"This work presents a novel approach to measure dynamic scattering (S-) parameters under transient pulsed bias conditions, aimed at the trapping characterization of microwave transistors. With the developed measurement technique, the trapping dynamics can be extracted from both the gate-to-source capacitance, Cgs and the drain-to-source conductance, Gds, transients. This new technique provides a more comprehensive overview of the trapping mechanisms and can thus improve present models of microwave transistors. Experimental measurements of “transient pulsed” S-parameters on a commercial GaN HEMT are reported.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123834523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
PA design and statistical analysis through X-par driven load-pull and EM simulations 通过X-par驱动的负载-拉力和EM模拟进行PA设计和统计分析
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160313
S. Guerrieri, C. Ramella, F. Bonani, G. Ghione
{"title":"PA design and statistical analysis through X-par driven load-pull and EM simulations","authors":"S. Guerrieri, C. Ramella, F. Bonani, G. Ghione","doi":"10.1109/INMMiC46721.2020.9160313","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160313","url":null,"abstract":"Modeling the active device is a key step for the successful statistical analysis of power amplifiers: the nonlinear model must not only depend on the most relevant device fabrication parameters, but should also work accurately in source/load-pull analysis, since variations of the passive embedding network effectively act as a load-pull at the active device ports. We demonstrate that the X-parameter model extracted from physics-based nonlinear TCAD simulations is extremely accurate for load-pull analysis. The X-parameter model is coupled to electromagnetic simulations to assist the variability-aware design of a GaAs MMIC X-band power amplifier (PA): concurrent variations of the active device doping and of the capacitor dielectric layer thickness are considered as the main contributions to PA variability. Two possible output matching networks, with distributed or semi-lumped design, are compared: already for moderate doping variations the PA output power spread is dominated by the active device variability, while passive network variations are always the relevant contribution to PA efficiency.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130052499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Harmonic-Injection Class-EM/F3 Power Amplifier with Finite DC-Feed Inductance 有限直流馈电电感的谐波注入类em /F3功率放大器
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160271
Moise Safari Mugisho, N. Buchanan, M. Thian, A. Grebennikov
{"title":"Harmonic-Injection Class-EM/F3 Power Amplifier with Finite DC-Feed Inductance","authors":"Moise Safari Mugisho, N. Buchanan, M. Thian, A. Grebennikov","doi":"10.1109/INMMiC46721.2020.9160271","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160271","url":null,"abstract":"This paper presents the analysis and design of the Class-EM/F3 power amplifier (PA) with finite dc-feed inductance and isolation circuit. When compared to the classical Class-EM PA, the proposed PA offers a significantly lower peak drain voltage. The idealized voltage and current waveforms of the PA show that the main circuit fulfils the ZVS/ZVDS/ZCS/ZCDS conditions, thus minimizing power dissipation during off-to-on (as in the Class-E) and on-to-off (as in the Class-E−1) transitions. Closed-form design equations for the load-network parameters of the PA are derived and the analytical results are confirmed by harmonic-balance simulations. A circuit prototype, employing a transmission-line load-network was designed and implemented using GaN HEMTs. The constructed PA delivered a PAE of 85.4% and a Pout of 41.6 dBm at 1.25 GHz.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125797896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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