基于100纳米GaN-on-Si技术的ka波段单芯片前端设计

2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI:10.1109/INMMiC46721.2020.9160306

L. Pace, F. Costanzo, P. Longhi, W. Ciccognani, S. Colangeli, A. Suriani, R. Leblanc, E. Limiti

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引用次数: 11

摘要

本文介绍了一种工作在ka波段(35-36.5 GHz)的单片机前端(SCFE)。芯片采用OMMIC代工提供的栅极长度为100nm的GaN-on-Si技术设计。该MMIC集成了高功率、低噪声放大功能，由一对同步单极双掷(SPDT)开关实现，总表面积为4.7×3 mm2。传输模式(Tx)性能为36 dBm输出功率，功率附加效率(PAE)高于25%，在2db压缩时功率增益为20dB。关于接收模式(Rx)性能，获得了低于3.2 dB的噪声图(NF)和略低于32 dB的线性增益，I/O匹配也优于20 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a Ka-Band Single-Chip Front-End based on a 100 nm GaN-on-Si technology

In this paper, a Single-Chip Front-End (SCFE) operating in Ka-Band (35–36.5 GHz) is presented. Chip is designed exploiting a GaN-on-Si technology featured by 100nm gate length provided by OMMIC foundry. This MMIC integrates high-power, low-noise amplification functionalities enabled by a couple of synchronous Single-Pole Double-Throw (SPDT) switches, occupying a total surface of 4.7×3 mm2. Transmit-mode (Tx) performance present a 36 dBm output power, a Power Added Efficiency (PAE) higher than 25% and a 20dB power gain at 2 dB compression. Regarding the receiving-mode (Rx) performance, a sub-3.2 dB Noise Figure (NF) and a linear gain just below the 32 dB level is obtained, with a I/O matching better than 20 dB, as well.

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来源期刊

2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)

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