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2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)最新文献

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Optimising Linearity of Envelope Tracking Power Amplifier Using Baseband Linearisation Approach 利用基带线性化方法优化包络跟踪功率放大器的线性度
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160347
P. Chen, A. Alt, J. M. Moreno Rubio, S. Alsahali, J. Lees, R. Quaglia, M. Casbon, P. Tasker
{"title":"Optimising Linearity of Envelope Tracking Power Amplifier Using Baseband Linearisation Approach","authors":"P. Chen, A. Alt, J. M. Moreno Rubio, S. Alsahali, J. Lees, R. Quaglia, M. Casbon, P. Tasker","doi":"10.1109/INMMiC46721.2020.9160347","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160347","url":null,"abstract":"The aim of this paper is to improve the linearity of an envelope tracking (ET) power amplifier (PA) using a simple baseband linearisation approach (BLA), which releases the requirement for the ET-customised digital predistortion (DPD) techniques. The proposed BLA is verified through the comparative study on a Gallium Nitride (GaN) PA with ET and a 28V supply voltage. A two-tone signal and a 20MHz modulated signal are used in the measurement, which demonstrates that in contrast to the 28 V case, the ET PA using BLA can simultaneously achieve higher efficiency and better linearity. To investigate the linearity improvement of using BLA, the constellation diagrams, AM/AM and AM/PM characteristics with and without generalized memory polynomial (GMP)-based DPD are measured and analysed.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121991533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterising the Baseband Impedance of Supply Modulators Using Simple Modulated Signals 用简单调制信号表征电源调制器基带阻抗
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160186
A. Alt, A. Villarruel-Parra, P. Chen, S. Alsahali, A. Forsyth, P. Tasker, J. Lees
{"title":"Characterising the Baseband Impedance of Supply Modulators Using Simple Modulated Signals","authors":"A. Alt, A. Villarruel-Parra, P. Chen, S. Alsahali, A. Forsyth, P. Tasker, J. Lees","doi":"10.1109/INMMiC46721.2020.9160186","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160186","url":null,"abstract":"Envelope tracking is one of the promising technologies for 5G power amplifiers, providing high power efficiency over a wide output power range by modulating the supply voltage. Although the baseband impedance, the output impedance of the supply modulator, plays a crucial role in the linearity of the PA, it is often not measured or considered during the modulator design. This paper presents a new, simplified approach to characterising this impedance using a PA with a simple multi-tone modulation as a load. It describes the measurement setup and verifies the results by characterising the baseband impedance of a state-of-the-art buck converter and comparing this to its static model. The results demonstrate that multi-tone signals and complex modulations yield comparable results and are both suitable for measuring and modelling the baseband impedance. This shows that using simple multi-tone measurements and basic equipment, the full static impedance characteristic can be obtained.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"2009 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128231069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN Doherty MMIC Power Amplifiers for Satellite Ka-band Downlink 卫星ka波段下行GaN Doherty MMIC功率放大器
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160047
A. Piacibello, F. Costanzo, R. Giofré, D. Hayes, R. Quaglia, V. Camarchia
{"title":"GaN Doherty MMIC Power Amplifiers for Satellite Ka-band Downlink","authors":"A. Piacibello, F. Costanzo, R. Giofré, D. Hayes, R. Quaglia, V. Camarchia","doi":"10.1109/INMMiC46721.2020.9160047","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160047","url":null,"abstract":"This work presents the design and preliminary results of two integrated Doherty power amplifiers fabricated on 100nm Gallium Nitride on Silicon, targeting the satellite downlink Ka-band (17.3–20.3 GHz). The MMICs, based on different architectures, have been designed respecting the stringent limits on linearity and devices’ maximum junction temperature imposed by the application. Nevertheless, an average output and efficiency higher than 36dBm and 30%, respectively, are expected across the overall band. The preliminary characterization of the MMICs shows measured small signal behaviours well in agreement with the simulations. In particular, for both MMICs, the measured small signal gain is in excess of 25 dB with both input and output return losses better than 10 dB in the whole frequency band.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124788186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Evaluation of Thermal Impedance by 3omega Method for Power Amplifier Behavioral Modeling 用3omega法评价功放行为建模的热阻抗
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160235
K. M. Ali, S. Mons, E. Ngoya, R. Sommet
{"title":"Evaluation of Thermal Impedance by 3omega Method for Power Amplifier Behavioral Modeling","authors":"K. M. Ali, S. Mons, E. Ngoya, R. Sommet","doi":"10.1109/INMMiC46721.2020.9160235","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160235","url":null,"abstract":"This paper addresses the study of the thermal impedance of commercial GaN transistors when the process design kit (PDK) does not provide accurate or complete information. Two Cree transistors have been characterized through simulation and experimental measurements using the so-called “3ω method”. One major advantage of the 3ω method is to allow identification of the thermal effects in conditions where traps are not excited. In this work, we bring some improvement to the original method in order to achieve better accuracy control. The ultimate aim is to assess the thermal impedance of a power amplifier from its design phase and to give adequate information to electrothermal behavioral models for the system level.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129654747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gain Enhancement Techniques for Monolithically Integrated Antennas 单片集成天线增益增强技术
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160089
C. Mustacchio, L. Boccia, E. Arnieri, G. Amendola
{"title":"Gain Enhancement Techniques for Monolithically Integrated Antennas","authors":"C. Mustacchio, L. Boccia, E. Arnieri, G. Amendola","doi":"10.1109/INMMiC46721.2020.9160089","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160089","url":null,"abstract":"Two gain enhancement techniques for monolithically integrated monopole antennas are presented in this work. The proposed configurations have been designed in a standard 0.13 μm SiGe BiCMOS process. In the first one, Split Ring Resonators (SRRs) have been combined with Localized Backside Etching (LBE). These etched parts are removed locally from the silicon substrate, reducing the losses and thus contributing to increase the gain of the monopole antenna. In the second technique, an on-chip monopole antenna is paired with parasitically coupled SRRs. The latter elements are tuned using a capacitive load which serves to control their resonance frequency without changing their physical dimensions. These techniques have been compared with an unloaded monopole and they provide a gain enhancement of about 1 dBi within the band of interest without significantly increasing the overall antenna size which was fixed to 1.296 × 1.508 mm2.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127181213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Power Combining Techniques for Space-Borne GaN SSPA in Ka-Band 星载GaN SSPA ka波段功率组合技术
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160041
R. Giofré, P. Colantonio, F. Di Paolo, L. Cabrìa, M. Lopez
{"title":"Power Combining Techniques for Space-Borne GaN SSPA in Ka-Band","authors":"R. Giofré, P. Colantonio, F. Di Paolo, L. Cabrìa, M. Lopez","doi":"10.1109/INMMiC46721.2020.9160041","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160041","url":null,"abstract":"Highly Efficient power combining techniques are mandatory for developing solid state power amplifiers (SSPAs) for high frequency space applications. Indeed, SSPAs are designed starting from medium power components, in the range of few watts, that are combined in such a way that the equipment efficiency is kept as maximum as possible. Planar structures such as branchlines or Wilkinson provide good isolation between ports but their losses become prohibitive when both peak power and frequency are in the range of hundreds of watt and tens of GHz, respectively. In these cases, waveguide structures result to be the most appropriate. On this way, the paper presents the design and experimental characterization of two distinctive structures conceived for spatially combine sixteen 10W Gallium nitride monolithic microwave integrated circuit for realizing a Ka-band (17.3 GHz–20.2 GHz) SSPA with more than 125W of saturated output power.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131226804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Nonlinear FET Modeling from a Single NVNA Measurement by Nonlinear Function Sampling 基于非线性函数采样的单NVNA测量非线性场效应管建模
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160153
T. Martín-Guerrero, C. Camacho-Peñalosa, A. Santarelli, G. P. Gibiino, P. Traverso, F. Filicori
{"title":"Nonlinear FET Modeling from a Single NVNA Measurement by Nonlinear Function Sampling","authors":"T. Martín-Guerrero, C. Camacho-Peñalosa, A. Santarelli, G. P. Gibiino, P. Traverso, F. Filicori","doi":"10.1109/INMMiC46721.2020.9160153","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160153","url":null,"abstract":"We propose an automatic method for FET quasi-static (QS) modeling based on just one full-swing, full-bandwidth (BW) Nonlinear Vector Network Analyzer (NVNA) measurement under a specific two-tone excitation. The procedure leverages on a newly defined Nonlinear Function Sampling (NFS) operator and on 2D time-domain waveform analysis, allowing for model identification by just solving a system of linear equations. The model has been validated under continuous-wave (CW) operation at 2.5 and 5 GHz, and for 3rd-order intermodulation distortion (IM3) prediction at 2.5 GHz.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131627208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design strategy of a 2.8–3.6 GHz 20W GaN Doherty power amplifier 2.8-3.6 GHz 20W GaN Doherty功率放大器的设计策略
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160228
Ardit Veshaj, A. Piacibello, C. Ramella, A. Nasri, V. Camarchia, M. Pirola
{"title":"Design strategy of a 2.8–3.6 GHz 20W GaN Doherty power amplifier","authors":"Ardit Veshaj, A. Piacibello, C. Ramella, A. Nasri, V. Camarchia, M. Pirola","doi":"10.1109/INMMiC46721.2020.9160228","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160228","url":null,"abstract":"This paper presents the design of a 20W GaN Doherty Power Amplifier working in the range 2.8 GHz–3.6 GHz. The design strategy adopted for the design of the Doherty output combiner is discussed, which consists in embedding the device parasitics into the latter, implemented as a multi-stage quarter-wavelength transformer, in order to achieve wideband behaviour. The saturated output power ranges from 42dBm to 44 dBm, with a corresponding drain efficiency in excess of 47%. The efficiency at 6 dB of output back-off is higher than 42% over the whole frequency band, and the small-signal gain is higher than 10 dB. Due to the discrepancies of the measured scattering parameters compared to the simulated ones, which could not be corrected with post-tuning, a redesign of the prototype is ongoing.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133891370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On the delay implementation in FET Large Signal Models FET大信号模型的延迟实现
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160224
I. Angelov, Goran Granstrom, Marcus Gavel, M. Ferndahl, N. Rorsman, Alvaro Perez
{"title":"On the delay implementation in FET Large Signal Models","authors":"I. Angelov, Goran Granstrom, Marcus Gavel, M. Ferndahl, N. Rorsman, Alvaro Perez","doi":"10.1109/INMMiC46721.2020.9160224","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160224","url":null,"abstract":"several options for implementing FET channel delay in user defined Large Signal models (LS) are discussed. The high importance of precise definition of reference planes for MMIC operating in mm waves is discussed as well. The delay implementation and a way to improve the reference planes accuracy was tested in a special two stage W-band test amplifier circuit. The LS model was used later to design several practical MMIC circuits","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128048683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Power GaAs Digital and Analog Functionalities for Microwave Signal Conditioning in AESA Systems AESA系统中微波信号调理的低功耗GaAs数字和模拟功能
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160147
C. Ramella, P. Longhi, A. Nasri, L. Pace, W. Ciccognani, Motahhareh Estebsari, M. Pirola, E. Limiti
{"title":"Low Power GaAs Digital and Analog Functionalities for Microwave Signal Conditioning in AESA Systems","authors":"C. Ramella, P. Longhi, A. Nasri, L. Pace, W. Ciccognani, Motahhareh Estebsari, M. Pirola, E. Limiti","doi":"10.1109/INMMiC46721.2020.9160147","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160147","url":null,"abstract":"A MMIC demonstrator for RF phase and amplitude control with on board 18-bit serial to parallel conversion (Multi-Functional Chip) is presented. Thanks to an alternative digital building block topology, the DC power consumption of the digital serial to parallel converter is noteworthy: less than 43 mW (2 mW/bit). The main RF performances are 0° – 360° phase coverage and 0 dB – 31.5 dB attenuation setting, in the 7.6 GHz – 9.1 GHz operating bandwidth. The circuit, whose area is 6 mm2, is realised in an industrial and commercially available GaAs technology. This component can be used in active electronically scanned arrays for beam steering.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124638995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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