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2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)最新文献

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Clipping-and-inverse-filtering Technique for Concurrent Multiband Transmitters 多频带并发发射机的削波反滤波技术
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160344
Wenhui Cao, Siqi Wang, Bo Göransson, T. Eriksson
{"title":"Clipping-and-inverse-filtering Technique for Concurrent Multiband Transmitters","authors":"Wenhui Cao, Siqi Wang, Bo Göransson, T. Eriksson","doi":"10.1109/INMMiC46721.2020.9160344","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160344","url":null,"abstract":"The 5G communication systems will include 5G and the legacy 2/3/4G spectral bands to accommodate multiple communication standards. As a result, the concurrent multiband scenario has become a new and essential requirement. Since the high peak to average power ratio (PAPR) of the transmitted signal severely limits the power efficiency of power amplifiers (PA), this paper proposed a new crest factor reduction (CFR) method to suppress the signal peaks without introducing distortion to the transmitted signal, particularly for the concurrent multiband scenario. Some platform measurements and performance comparisons have been conducted to justify the effectiveness of the proposed CFR technique.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134367564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Power Measurement Setup Development for On-Wafer Characterization at 185–191 GHz 用于185 - 191ghz片上表征的功率测量装置开发
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160204
C. Maye, S. Lépilliet, E. Okada, D. Gloria, G. Ducournau, C. Gaquière
{"title":"Power Measurement Setup Development for On-Wafer Characterization at 185–191 GHz","authors":"C. Maye, S. Lépilliet, E. Okada, D. Gloria, G. Ducournau, C. Gaquière","doi":"10.1109/INMMiC46721.2020.9160204","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160204","url":null,"abstract":"This article presents off-wafer scalar power setup dedicated to load-pull measurement for characterization of on-wafer active devices between 185 and 191 GHz. The system architecture allows us to determine the absorbed input power, the output power delivered to the load, the power added efficiency and the power gain of a device. Preliminary measurements achieved on integrated tuner on silicon proves the potentiality of the test bench: an accuracy of +/− 0.5 dB is obtained from −20 to 8 dBm of injected power at the input plane of the integrated device under test and detections of the reflected and output powers are realized from −25 to 5 dBm and from −35 to 13 dBm respectively.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125330232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Sample Pruning Based on Leverage for Digital Pre-Distortion 基于杠杆的数字预失真采样剪枝
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160203
Declan Byrne, R. Farrell, J. Dooley
{"title":"Sample Pruning Based on Leverage for Digital Pre-Distortion","authors":"Declan Byrne, R. Farrell, J. Dooley","doi":"10.1109/INMMiC46721.2020.9160203","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160203","url":null,"abstract":"In this paper a method for identifying outlier data points during the training of a Digital Pre-Distortion (DPD) function is presented. In modern cellular networks, DPD functions are trained with complex modulated signals. The distribution of the magnitudes of the samples in these signals is heavily skewed. Through linear algebra manipulation, the leverage each sample exhibits on the calculated DPD coefficients can be obtained during the DPD training process. Data points in the training signal that are overly influential can be removed, and the function retrained.Experimental validation for this technique was performed using captured input and output power amplifier (PA) signals. Improvements to both PA modelling and DPD function modelling were observed. With regards to the improved DPD function, normalised mean squared error (NMSE) was improved by 5.4% and error vector magnitude (EVM) was improved by 30.3%.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133948796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Solution for the Large-Signal Matching Problem: Maximizing the Efficiency using X-parameters 大信号匹配问题的解决方案:利用x参数最大化效率
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160069
B. Pichler, H. Arthaber
{"title":"Solution for the Large-Signal Matching Problem: Maximizing the Efficiency using X-parameters","authors":"B. Pichler, H. Arthaber","doi":"10.1109/INMMiC46721.2020.9160069","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160069","url":null,"abstract":"Solving the large signal matching problem is crucial in non-linear circuit design. Typically, load-pull measurements are utilized to find solutions for maximizing the output power or the efficiency of a non-linear DUT. This is time consuming, thus, finding a mathematical solution for the large signal matching problem is desired. Therefore, X-parameters can be utilized. In this work, a solution for the large signal matching problem is presented, allowing to find the optimum load condition for maximizing the efficiency. To show the accuracy of the presented technique, measured X-parameters from a commercially available GaN HEMT were applied to the presented solution. The results are compared to load-pull verification measurements gained from the same DUT.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"14 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114867211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Prediction of the Optimal Phase Shift between Control Signals in Dual-Input Power Amplifiers 双输入功率放大器控制信号间最优相移预测
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160227
Estefanía Guillena, Wantao Li, P. Gilabert, G. Montoro
{"title":"Prediction of the Optimal Phase Shift between Control Signals in Dual-Input Power Amplifiers","authors":"Estefanía Guillena, Wantao Li, P. Gilabert, G. Montoro","doi":"10.1109/INMMiC46721.2020.9160227","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160227","url":null,"abstract":"This paper evaluates the effect of the phase shift between the two control signals in a dual-input load modulated balanced amplifier (LMBA). While the drain efficiency of the LMBA is not significantly affected by the phase shift between the control signals, the LMBA linearity instead can be significantly degraded if the phase shift parameter is not properly chosen. Therefore, we can predict the optimal phase shift between both LMBA control signals to enhance linearity levels when considering a 20 MHz bandwidth LTE transmission over a center frequency of operation ranging from 1.8 GHZ to 2.5 GHz. Experimental results showing the LBMA linearity and power efficiency after digital predistortion (DPD) linearization are presented. Finally, additional key parameters contributing to improve the LBMA power efficiency are discussed.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116080174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Efficiency Enhancement of A Broadband Sequential Power Amplifier Using Envelope Tracking 利用包络跟踪提高宽带顺序功率放大器的效率
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160332
P. Chen, R. Quaglia, J. Lees, B. Merrick, A. Alt, P. Tasker
{"title":"Efficiency Enhancement of A Broadband Sequential Power Amplifier Using Envelope Tracking","authors":"P. Chen, R. Quaglia, J. Lees, B. Merrick, A. Alt, P. Tasker","doi":"10.1109/INMMiC46721.2020.9160332","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160332","url":null,"abstract":"This paper demonstrates the first realisation of a sequential power amplifier (SPA) with envelope tracking (ET). Composed of a 10 W main PA and a 23 W peaking PA, the 1.6–2.4 GHz SPA achieves more than 49% drain efficiency at 6 dB back-off across the band through modulating the main PA supply voltage. At 2 GHz, the ET SPA offers more than 45% efficiency at 10 dB back off. Moreover, the linearity of the ET SPA is measured with and without digital predistortion over the band. To the best of the authors’ knowledge, this work is the first investigation where ET has been applied to the SPA.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123810762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 面向谐波调谐功率放大器设计的负载-拉力测量
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160151
G. Bosi, A. Raffo, V. Vadalà, G. Vannini, G. Avolio, M. Marchetti, R. Giofré, P. Colantonio, E. Limiti
{"title":"Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design","authors":"G. Bosi, A. Raffo, V. Vadalà, G. Vannini, G. Avolio, M. Marchetti, R. Giofré, P. Colantonio, E. Limiti","doi":"10.1109/INMMiC46721.2020.9160151","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160151","url":null,"abstract":"In this paper we investigate the complexity of the characterization of electron devices with microwave load-pull systems when harmonically-tuned classes of amplification are adopted. In particular, we highlight the effects of the transistor dynamic nonlinearities on the load impedances at the transistor current-generator plane.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127617718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Analytical Formulation for the Class F Mode F类模态的一种新的解析式
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160165
S. Cripps
{"title":"A New Analytical Formulation for the Class F Mode","authors":"S. Cripps","doi":"10.1109/INMMiC46721.2020.9160165","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160165","url":null,"abstract":"A new analysis of the Class F mode is presented. It is shown that by including a realistic model for the IV knee region, the functional dependency of power and efficiency on the third harmonic termination can be derived using closed form analytical expressions. This leads to useful practical design guidelines. In particular, the third harmonic termination can depart significantly from an open circuit without a significant degradation in performance.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115300850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs 铁缓冲掺杂位置对GaN hemt中陷阱特征的影响
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160114
K. Sharma, E. Dupouy, M. Bouslama, R. Sommet, J. Nallatamby
{"title":"Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs","authors":"K. Sharma, E. Dupouy, M. Bouslama, R. Sommet, J. Nallatamby","doi":"10.1109/INMMiC46721.2020.9160114","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160114","url":null,"abstract":"This paper presents the impact of two different iron (Fe) doping depths in the buffer, on trapping effects in AlGaN/GaN high electron mobility transistors (HEMTs). Drain current transient (DCT) measurements are performed on AlGaN/GaN HEMTs of 0.15-μm ultrashort gate length and 6 × 50 μm gate width at various chuck temperatures ranging between 25°C and 125°C. On the basis of these measurements we demonstrate that, for the devices under investigation 1) depending on the location of Fe doping in the buffer, number of trap signatures differ and 2) it influences the capture time and recovery time of the traps. This study demonstrates the effect of Fe doping depth on DCT visible only for temperatures more than 75°C. For a device with deeper level of Fe doping in the buffer, we find signatures of two traps with ac tivation energies of 0.55eV and 0.45eV. Whereas, another device with a shallow level of Fe doping in the buffer, has only one trap signature with activation energy 0.5eV.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128085740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
SiGe Sub-THz VCOs Design Approach for Imaging Applications 成像应用的SiGe亚太赫兹vco设计方法
2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) Pub Date : 2020-07-01 DOI: 10.1109/INMMiC46721.2020.9160077
L. Pantoli, H. Bello, G. Leuzzi, H. Ng, D. Kissinger
{"title":"SiGe Sub-THz VCOs Design Approach for Imaging Applications","authors":"L. Pantoli, H. Bello, G. Leuzzi, H. Ng, D. Kissinger","doi":"10.1109/INMMiC46721.2020.9160077","DOIUrl":"https://doi.org/10.1109/INMMiC46721.2020.9160077","url":null,"abstract":"In this work the design method and comparative results of sub-THz tunable voltage sources are reported. Different architectures are considered showing the best performance architectures and more reliable approaches for the realization of voltage-controlled oscillators (VCOs) with integrated technology. The considered scenario is the realization of a signal source for THz camera and imaging applications. The preferred technology adopted in this work has been the 130 nm SiGe heterojunction-bipolar-transistor process provided by IHP foundry. The SG13G2 has a cut-off frequency (fT) of 300 GHz and a maximum oscillation frequency (fmax) of 450 GHz. The solutions here proposed achieve high output power levels, very good Phase Noise performance, wide tunability and compact dimensions.","PeriodicalId":255226,"journal":{"name":"2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116453044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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