Harmonic-Injection Class-EM/F3 Power Amplifier with Finite DC-Feed Inductance

Moise Safari Mugisho, N. Buchanan, M. Thian, A. Grebennikov
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引用次数: 1

Abstract

This paper presents the analysis and design of the Class-EM/F3 power amplifier (PA) with finite dc-feed inductance and isolation circuit. When compared to the classical Class-EM PA, the proposed PA offers a significantly lower peak drain voltage. The idealized voltage and current waveforms of the PA show that the main circuit fulfils the ZVS/ZVDS/ZCS/ZCDS conditions, thus minimizing power dissipation during off-to-on (as in the Class-E) and on-to-off (as in the Class-E−1) transitions. Closed-form design equations for the load-network parameters of the PA are derived and the analytical results are confirmed by harmonic-balance simulations. A circuit prototype, employing a transmission-line load-network was designed and implemented using GaN HEMTs. The constructed PA delivered a PAE of 85.4% and a Pout of 41.6 dBm at 1.25 GHz.
有限直流馈电电感的谐波注入类em /F3功率放大器
本文介绍了具有有限直流电感和隔离电路的em /F3类功率放大器的分析与设计。与经典的em类放大器相比,该放大器的峰值漏极电压显著降低。PA的理想电压和电流波形表明,主电路满足ZVS/ZVDS/ZCS/ZCDS条件,从而最大限度地减少了从开到开(如e类)和从开到关(如e - 1类)转换期间的功耗。推导了负载网络参数的封闭设计方程,并通过谐波平衡仿真验证了解析结果。利用GaN hemt设计并实现了一种采用传输在线负载网络的电路原型。该放大器在1.25 GHz下的PAE为85.4%,输出功率为41.6 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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