Transient Pulsed S-Parameters for Trapping Characterization

Abstract

This work presents a novel approach to measure dynamic scattering (S-) parameters under transient pulsed bias conditions, aimed at the trapping characterization of microwave transistors. With the developed measurement technique, the trapping dynamics can be extracted from both the gate-to-source capacitance, Cgs and the drain-to-source conductance, Gds, transients. This new technique provides a more comprehensive overview of the trapping mechanisms and can thus improve present models of microwave transistors. Experimental measurements of “transient pulsed” S-parameters on a commercial GaN HEMT are reported.