{"title":"An impact of circuit scale on the performance of 3-D stacked arithmetic units","authors":"J. Tada, Ryusuke Egawa, Hiroaki Kobayashi","doi":"10.1109/3DIC.2014.7152185","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152185","url":null,"abstract":"Recently, the 3-D stacked integrated circuit technology has been expected to overcome the limitations in the design of the 2-D implemented microprocessors. This paper examines the potential of 3-D integration in design and implementation of large-scale arithmetic units. In this paper, 3-D stacked parallel multipliers with various operand sizes are designed, and the effect of circuit scale on the performance of 3-D stacked multipliers is discussed. In the design of a large-scale parallel multiplier, a lot of through-silicon-vias are required by the conventional partitioning pattern. This paper proposes a partitioning pattern suitable for a large-scale 3-D stacked parallel multiplier. The proposed partitioning pattern aims to reduce the number of TSVs with a large-scale parallel multiplier. Based on the proposed partitioning pattern, 3-D stacked 32, 64, and 128-bit multipliers are designed and evaluated. The proposed partitioning pattern achieves a 13.4% reduction in critical path delay and a 10.4% reduction in power consumption compared to the 2-D implementation, in the case of an 128-bit four-layer implemented 3-D stacked multiplier.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117033011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Dieng, P. Artillan, C. Bermond, O. Guiller, T. Lacrevaz, S. Joblot, G. Houzet, A. Farcy, Y. Lamy, B. Fléchet
{"title":"Electrical model and characterization of Through Silicon Capacitors (TSC) in silicon interposer","authors":"K. Dieng, P. Artillan, C. Bermond, O. Guiller, T. Lacrevaz, S. Joblot, G. Houzet, A. Farcy, Y. Lamy, B. Fléchet","doi":"10.1109/3DIC.2014.7152152","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152152","url":null,"abstract":"Inspired from Through Silicon Vias (TSVs), Through Silicon Capacitors (TSCs) are newly developed capacitors integrated throughout the silicon interposer. This paper deals with a demonstrator which investigates the first process steps of TSCs. A predictive modeling method of the impedance of large matrices of such components is proposed. The modeling method makes use of 2D/3D parasitic extraction software for the modeling of each parts of the structure. The resulting lumped RLCG parameters are used to generate a global equivalent circuit composed of segments of coupled distributed cells. The modeling method is validated by experimental results on the whole frequency range of use (up to 10 GHz). Such components demonstrate simultaneously high capacitance density (up to 23 nF/mm2), low parasitic equivalent series resistance and inductance and high serial resonance frequency (in GHz range for a capacitance value of 10 nF).","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125671541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A cost benefit analysis: The impact of defect clustering on the necessity of pre-bond tests","authors":"Qiaosha Zou, Matthew Poremba, Yuan Xie","doi":"10.1109/3DIC.2014.7152176","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152176","url":null,"abstract":"The emerging three-dimensional integrated circuit (3D IC) provides a promising solution for sustainable computer performance scaling. However, the high cost due to the complex pre-bond/intermediate testing and the low compound yield hinder the commercial adoption of 3D ICs. The defect clustering is found biasing the yield prediction, resulting in an unrealistic cost estimation at the early design stage. Under defect clusterings, it is possible that we eliminate the pre-bond/intermediate test. Moreover, components in a chip might be functional even with defects, which leads to the partially functional dies. Therefore, in this work, we propose a framework to analyze the cost benefit with test elimination and partially functional dies. To support our proposed framework, a hierarchical yield model and an analytical model for test elimination considering defect clustering are provided. Through analyzing the impact of the pre-bond/intermediate test elimination on the final stacking cost with our framework, we show that the wafer cost is the most important factor on the test elimination. Moreover, further cost saving can be obtained by combining partially functional dies with test elimination.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130385373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Kociubiński, M. Duk, T. Bieniek, G. Janczyk, M. Borecki
{"title":"Innovative SiC over Si photodiode based dual-band, 3D integrated detector","authors":"A. Kociubiński, M. Duk, T. Bieniek, G. Janczyk, M. Borecki","doi":"10.1109/3DIC.2014.7152181","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152181","url":null,"abstract":"This paper describes the fabrication of 3D-stacked, dual-band sensitive device and their preliminary characterization results. The device consists of two 3D integrated detectors. The square chip with fabricated 4H-SiC p-i-n junction was mounted on commercial silicon chip with large area VIS-photodiode made by Institute of Electron Technology in Warsaw. The UV-photodetector was made on n-type 4H-SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a silicon dioxide layer was formed for passivation, without a guard ring. The optical and electrical characterization of each of the photodiode structures has been discussed including dark current and spectral response measurements of large-area silicon diode with 4H-SiC p-i-n junction. All the diodes showed excellent rectification with low leakage current.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"28 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129347047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Kowalczuk, A. Bhattacharya, Ka Chung Lee, J. Alton, M. Igarashi, S. Barbeau
{"title":"Fault localisation of defects using Electro Optical Terahertz Pulse Reflectometry and 3D EM modelling with Virtual Known Good Device","authors":"E. Kowalczuk, A. Bhattacharya, Ka Chung Lee, J. Alton, M. Igarashi, S. Barbeau","doi":"10.1109/3DIC.2014.7152159","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152159","url":null,"abstract":"A methodology for electronic non-destructive failure analysis of 3D-ICs is presented. The method is centred on the Electro Optical Terahertz Pulse Reflectometry technique. Through use of 3D Electromagnetic modelling, a Virtual Known Good Device can be established allowing the means to locate faults in a 3D package design. Measured voltage waveforms generated using the Electro Optical Terahertz Pulse Reflectometry technique are presented for a BGA package with an open defect. Measurements are in good agreement with 3D EM simulation results for the same scenario demonstrating the potential of this technique to locate faults quickly and accurately.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"282 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116123510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal challenges for heterogeneous 3D ICs and opportunities for air gap thermal isolation","authors":"Yang Zhang, Thomas E. Sarvey, M. Bakir","doi":"10.1109/3DIC.2014.7152174","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152174","url":null,"abstract":"Thermal crosstalk within a heterogeneous 3D IC results in higher temperatures for low-power dice; this is particularly true in memory-logic, photonic-logic, and MEMS-logic stacks. The elevated temperatures may consequently impact the performance of the low-power devices. This paper describes a thermal solution for both heat removal as well as thermal isolation within a 3D chip stack. Based on the evaluated memory-logic 3D architecture and compared to conventional air-cooling, the proposed technologies reduce the maximum temperature of the memory die from 75.6 °C to 36.7 °C and processor die from 75.9 °C to 60.1 °C.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"82 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116298643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design rule check and layout versus schematic for 3D integration and advanced packaging","authors":"R. Fischbach, A. Heinig, P. Schneider","doi":"10.1109/3DIC.2014.7152150","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152150","url":null,"abstract":"In this paper we will present a solution for automatic design rule checking (DRC) and layout versus schematic comparison (LVS) of 2.5D/3D systems, which enables an early check of subcomponents as well as whole system checks. The advantage of our approach is the unique data handling for different DRC and LVS runs, which allows the automatic derivation of partial design data from one single data base. Such an approach is essential for industrial driven designs of 2.5/3D systems. Otherwise, there is a high risk of mistakes related to data conversion and versioning problems. Such data handling issues can result in erroneous designs and cost extensive redesigns.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121730380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Bumpless interconnects formed with nanowire ACF for 3D applications","authors":"J. Tao, A. Mathewson, K. Razeeb","doi":"10.1109/3DIC.2014.7152154","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152154","url":null,"abstract":"Nanowire ACF is fabricated by template synthesis method based on electrochemical deposition. Due to the high aspect ratio of length to diameter (50:1), the nanowires can act as compliant conductors to electrically connect the bumpless dies with a small bonding force. In this work, an interconnection resistance of 90 mΩ per 40 × 40 μm2 pad is measured for the Cu NW-ACF bonding between two Au bumpless dies. An increasing leakage current up to 10-6 A in x-y plane is observed with the elevated voltage till 20 V for a pitch size of 80 μm. A comparison study of NW-ACF to conventional particle based ACF is carried out. The bonding mechanisms of the NW-ACF bonding to bumped and bumpless dies and its difference to particle ACF bonding is revealed by bonding interface analysis.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130364667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Chtourou, M. Abid, V. Pangracious, Emna Amouri, Z. Marrakchi, H. Mehrez
{"title":"Three-dimensional Mesh of Clusters: An alternative unified high performance interconnect architecture for 3D-FPGA implementation","authors":"S. Chtourou, M. Abid, V. Pangracious, Emna Amouri, Z. Marrakchi, H. Mehrez","doi":"10.1109/3DIC.2014.7152149","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152149","url":null,"abstract":"In this study, we propose a three-dimensional (3D) interconnect network implementation based on a modified Mesh-of-Clusters (MoC) topology for FPGA architecture design. Design and experimental setup is developed to demonstrate the improvement in performance, power and area of 2.5D and 3D MoC-based FPGA architecture. MoC starts with a mesh of nodes and builds a separate hierarchical network along each row and column in the mesh. To obtain the optimal MoC programmable interconnect structure with high performance and density, the routing architecture of the 2D MoC-based FPGA is modified to include long routing segments which span multiple switch blocks in every row and column. By adjusting the percentage of long wire and span, we can design and build 2.5D and 3D high density MoC FPGAs. To design 3D MoC-based FPGAs, we cut the 2D MoC FPGA into two equal FPGA dies and we adjust the long wire span factor to connect the two dies. Then, these long wire segments are converted as 3D through silicon via (TSV) technology. To design 2.5D interposer based multi-FPGA architecture, we use the same principle of cuts and we adjust the long wires span to remain within die connections. However, we apply constraints at cutline location to reduce the die to die interposer connections. A 3D physical design CAD for MoC-based FPGA is developed using Global Foundries 130nm technology node modified to use TSV designs from Tezzaron Semiconductor inc. Using our 3D design and simulation tool flow developed for MoC-based FPGA, we demonstrate that the speed, power and area of 3D MoC-based FPGA architecture are improved respectively by 35%, 21% and 47% in comparison to 2D MoC-based FPGA.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131546483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Temple, D. Malta, E. Vick, M. Lueck, S. Goodwin, M. Muzilla, C. Masterjohn, M. Skokan
{"title":"Advanced 3D mixed-signal processor for infrared focal plane arrays: Fabrication and test","authors":"D. Temple, D. Malta, E. Vick, M. Lueck, S. Goodwin, M. Muzilla, C. Masterjohn, M. Skokan","doi":"10.1109/3DIC.2014.7152142","DOIUrl":"https://doi.org/10.1109/3DIC.2014.7152142","url":null,"abstract":"We report successful implementation of high-density 3D integration technology in the fabrication of advanced mixed-signal processors for infrared focal plane arrays. Separate analog and digital integrated circuits (ICs) were custom designed and fabricated in standard bulk CMOS technology in two different commercial foundries. The 3D interconnects were arrayed in a 256×256 format with a 30 micron pitch and had the form of through-silicon vias 4 micron in diameter and 30 micron deep. Completed 3D readout IC stacks were tested pixel by pixel, demonstrating operability of 99.9%. The 3D IC stacks were hybridized with infrared photodiode arrays and produced functional FPA imagers with 99.9% array operability and unprecedented performance. Such imaging arrays and other smart sensors enabled by 3D integration of sensing elements with sophisticated signal processing are of increasing interest for Internet-of-Things applications, from net-enabled surveillance to mobile health.","PeriodicalId":231905,"journal":{"name":"2014 International 3D Systems Integration Conference (3DIC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123730231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}