Fault localisation of defects using Electro Optical Terahertz Pulse Reflectometry and 3D EM modelling with Virtual Known Good Device

E. Kowalczuk, A. Bhattacharya, Ka Chung Lee, J. Alton, M. Igarashi, S. Barbeau
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引用次数: 4

Abstract

A methodology for electronic non-destructive failure analysis of 3D-ICs is presented. The method is centred on the Electro Optical Terahertz Pulse Reflectometry technique. Through use of 3D Electromagnetic modelling, a Virtual Known Good Device can be established allowing the means to locate faults in a 3D package design. Measured voltage waveforms generated using the Electro Optical Terahertz Pulse Reflectometry technique are presented for a BGA package with an open defect. Measurements are in good agreement with 3D EM simulation results for the same scenario demonstrating the potential of this technique to locate faults quickly and accurately.
利用电光太赫兹脉冲反射仪和虚拟已知好器件的三维电磁建模进行缺陷故障定位
提出了一种三维集成电路电子无损失效分析方法。该方法以电光太赫兹脉冲反射技术为中心。通过使用三维电磁建模,可以建立一个虚拟已知好设备,从而可以在三维封装设计中定位故障。利用电光太赫兹脉冲反射技术对具有开放缺陷的BGA封装进行了电压波形测量。测量结果与相同场景下的3D EM模拟结果非常吻合,证明了该技术快速准确定位故障的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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