1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers最新文献_第6页

A 5V temperature-regulated reference 一个5V温控基准

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156125

D. Laude, J. Beason

引用次数: 0

A 256 K dynamic RAM 256k动态RAM

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156048

S. Matsue, H. Yamamoto, K. Kobayashi, T. Wada, M. Tameda, T. Okuda, Y. Inagaki

引用次数: 5

A monolithic peak detector 单片峰值检测器

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156046

P. Henneuse

引用次数: 1

A monolithic NMOS filter and line balance chip 单片NMOS滤波器和线路平衡芯片

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156016

M. Foster, H. El-Sissi, V. Korsky, K. Siemens, R. Wallace, William Siu

引用次数: 5

A solid state color image sensor using ZnSe-Zn1-xCdxTe heterojunction thin-film photoconductor 采用ZnSe-Zn1-xCdxTe异质结薄膜光电导体的固态彩色图像传感器

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156082

Y. Terui, T. Wada, M. Yoshino, H. Kadota, T. Komeda, T. Chikamura, S. Fujiwara, H. Tanaka, Y. Ota, Y. Fujiwara, K. Ogawa, O. Kitahiro, S. Horiuchi

{"title":"A solid state color image sensor using ZnSe-Zn1-xCdxTe heterojunction thin-film photoconductor","authors":"Y. Terui, T. Wada, M. Yoshino, H. Kadota, T. Komeda, T. Chikamura, S. Fujiwara, H. Tanaka, Y. Ota, Y. Fujiwara, K. Ogawa, O. Kitahiro, S. Horiuchi","doi":"10.1109/ISSCC.1980.1156082","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156082","url":null,"abstract":"A 413H X 506V BBD* image sensor structure using a ZnSe-Znl-,Cd,Te heterojunction thin-film photoconductor for color imaging applications will be described. The device, with its photoconductive-layer-on-solid-scanner (PLOSS), can extend the aperture of the photoconductor to the scanning circuit area to obtain the high blue sensitivity of the heterojunction diode. Low light level sensing of a color image is thus possible. Blooming suppression is also available. The unit cell of the sensor, which consists of a thin-film photoconductor, a read-gate FET and a bucket-brigade transfer gate FET is shown schematically in Figure 1. The heterojunction film which is composed of ZnSe-Znl-,Cd,Te multilayer is vacuum-deposited on these FETs. A transparent electrode of IT0 film is deposited on the Znl-xCdxTe layer for reverse biasing of the heterojunction diode. The metal electrodes for ZnSe layer make contact with the N+ diffused source area of the read-gate FET to read a photogenerated charge from the reverse-biased heterojunction diode into the transfer stage of BBD-shift register through with the color filter located on the sensor within lop gap. The color difference signals (R-G, Cy-G) werc derived directly from the device at line sequential via a color filter and then encoded into an NTSC signal. The device has an acceptable color image quality under a low light ‘scene illumination level of 500 I x (F:2.0) which is 50% of the saturation illumination. In this state the SN is 43dB. Highlight exposure for a 10% spot of the imaging area was up to 120 times as intense as the saturation exposure within 5% blooming for the saturation signal.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122572503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A floating low-power subscriber line interface 一个浮动的低功耗用户线路接口

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156057

L. Freimanis, D. Smith

引用次数: 2

PCM coder and decoder ICs with switched capacitor filters 带开关电容滤波器的PCM编码器和解码器ic

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156065

H. Tanaka, M. Yamasawa, S. Kato, A. Itoh, M. Takahashi, M. Ohhata, A. Iwata, S. Hattori

引用次数: 1

The semiconductor industry challenges in the decade ahead 半导体行业在未来十年的挑战

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156116

J. Bucy

引用次数: 3

A monolithic capacitive pressure sensor with pulse-period output 具有脉冲周期输出的单片电容式压力传感器

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156130

C. Sander, J. Knutti, J. Meindl

引用次数: 48

A low power NMOS transmit/receive IC filter for PCM telephony 用于PCM电话的低功率NMOS发射/接收IC滤波器

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/isscc.1980.1156047

I. Young, D. Hildebrand, C. Johnson

引用次数: 1