{"title":"A monolithic capacitive pressure sensor with pulse-period output","authors":"C. Sander, J. Knutti, J. Meindl","doi":"10.1109/ISSCC.1980.1156130","DOIUrl":null,"url":null,"abstract":"A batch-fabricated 2.8 × 3.4mm monolithic capacitive pressure sensor, replacing piezoresistive pressure transducers, employing on-chip (less than 10mm2) circuitry, with current drain of 20μA operating at 2.5-20V, will be reported.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1980.1156130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 48
Abstract
A batch-fabricated 2.8 × 3.4mm monolithic capacitive pressure sensor, replacing piezoresistive pressure transducers, employing on-chip (less than 10mm2) circuitry, with current drain of 20μA operating at 2.5-20V, will be reported.