{"title":"具有脉冲周期输出的单片电容式压力传感器","authors":"C. Sander, J. Knutti, J. Meindl","doi":"10.1109/ISSCC.1980.1156130","DOIUrl":null,"url":null,"abstract":"A batch-fabricated 2.8 × 3.4mm monolithic capacitive pressure sensor, replacing piezoresistive pressure transducers, employing on-chip (less than 10mm2) circuitry, with current drain of 20μA operating at 2.5-20V, will be reported.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":"{\"title\":\"A monolithic capacitive pressure sensor with pulse-period output\",\"authors\":\"C. Sander, J. Knutti, J. Meindl\",\"doi\":\"10.1109/ISSCC.1980.1156130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A batch-fabricated 2.8 × 3.4mm monolithic capacitive pressure sensor, replacing piezoresistive pressure transducers, employing on-chip (less than 10mm2) circuitry, with current drain of 20μA operating at 2.5-20V, will be reported.\",\"PeriodicalId\":229101,\"journal\":{\"name\":\"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"48\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1980.1156130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1980.1156130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A monolithic capacitive pressure sensor with pulse-period output
A batch-fabricated 2.8 × 3.4mm monolithic capacitive pressure sensor, replacing piezoresistive pressure transducers, employing on-chip (less than 10mm2) circuitry, with current drain of 20μA operating at 2.5-20V, will be reported.