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2019 14th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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Comparison of Harmonic Balance Simulated and Measured Ultra-short Low Frequency/Microwave Transients in Pulse to Pulse Characterization of GaN transistors 氮化镓晶体管脉冲特性中谐波平衡模拟与实测的超短低频/微波瞬态的比较
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909514
M. Ben-Sassi, G. Neveux, D. Barataud
{"title":"Comparison of Harmonic Balance Simulated and Measured Ultra-short Low Frequency/Microwave Transients in Pulse to Pulse Characterization of GaN transistors","authors":"M. Ben-Sassi, G. Neveux, D. Barataud","doi":"10.23919/EuMIC.2019.8909514","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909514","url":null,"abstract":"This paper describes, for the first time to our knowledge, a comparison of Pulse to Pulse (P2P) performances of an AlGaN/GaN HEMT obtained, experimentally on the one hand thanks to an on-wafer fully calibrated characterization system and on the other hand, from a Harmonic Balance (HB) simulation of a foundry-based model of the transistor. The measurements and the HB simulations allow the simultaneous and coherent extraction of, on the one hand, the complex envelopes of the microwave (RF) voltages and currents and, on the other hand, the Low Frequency (LF) drain current generated by the non-linearities of the measured/simulated components. The complex voltage and current envelopes at both ports of the Devices Under Test (DUT) and the LF drain voltage and current have been simultaneously measured/simulated with a periodic irregular radar burst excitations composed of ultra-short transient pulses. The main originality of this work lies in the fact that the generated RF time-domain waveforms used for the measured and simulated excitation of the transistors have been corrected to strongly reduce the emergence of the Gibbs phenomenon [1]. Lanczos/Fejér series have already been implemented in general-purpose simulator but, to our knowledge, this is the first time that they are directly used to generate a useful excitation signal in a microwave characterization system and in a HB simulation.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127248439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Performance 60 GHz Bidirectional Phased Array Front End in SiGe BiCMOS 高性能60ghz双向相控阵前端SiGe BiCMOS
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909580
R. B. Yishay, O. Katz, B. Sheinman, D. Elad
{"title":"High Performance 60 GHz Bidirectional Phased Array Front End in SiGe BiCMOS","authors":"R. B. Yishay, O. Katz, B. Sheinman, D. Elad","doi":"10.23919/EuMIC.2019.8909580","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909580","url":null,"abstract":"This paper discusses the design and implementation of a 57-66 GHz bidirectional phased-array frontend in SiGe BiCMOS for time-duplexed transceivers. The TX path includes PA, power detector, variable attenuator and phase inverter. A fine-tuned 0-180° passive phase shifter is shared with the RX path which integrates also LNA, variable attenuators and phase inverter (PI). In RX mode, the front-end achieves 22 dB, gain bandwidth of 14 GHz and 6.4 dB minimum NF in the high-gain mode. In TX mode, the front-end achieves 12 dBm saturated output power, 9.7 dBm output-referred 1dB compression point, 24 dB gain, and 8 GHz bandwidth. The phase shifters achieve full 360° phase span with 6-bit phase resolution, 2.3° rms phase error and 0.2 dB rms gain error at 60 GHz. The IC occupies area of 3.3 mm2 (including pads) and consumes 102 mW / 256 mW in RX/TX (at P1dB), respectively.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"402 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127413942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High Robustness S-Band GaN Based LNA 基于高鲁棒s波段GaN的LNA
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909569
Zineb Ouarch Provost, Laurent Caillé, M. Camiade, M. Olivier, David Leclerc, C. Tolant, M. Stanislawiak
{"title":"High Robustness S-Band GaN Based LNA","authors":"Zineb Ouarch Provost, Laurent Caillé, M. Camiade, M. Olivier, David Leclerc, C. Tolant, M. Stanislawiak","doi":"10.23919/EuMIC.2019.8909569","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909569","url":null,"abstract":"A robust full-MMIC S-band Low Noise Amplifier including power limiter based on envelope detector and Cold FET power reflector is presented. The robust LNA is based on $0.25 mu m$ UMS GaN technology and exhibits high Input Power-handling up to 40W over 2-4GHz bandwidth associated to measured Recovery Time lower than $0.5 mu s$. Furthermore, the LNA noise Figure performance is lower than 2dB with more than 22dB of small signal gain. These results are promising for the next frontend radar architectures.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"744 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114001690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 后退操作下精度提高的GaN HEMT模型
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909567
V. Vadalà, A. Raffo, K. Kikuchi, Hiroshi Yamamoto, G. Bosi, Kazutaka Inoue, N. Ui, G. Vannini
{"title":"GaN HEMT Model with Enhanced Accuracy under Back-off Operation","authors":"V. Vadalà, A. Raffo, K. Kikuchi, Hiroshi Yamamoto, G. Bosi, Kazutaka Inoue, N. Ui, G. Vannini","doi":"10.23919/EuMIC.2019.8909567","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909567","url":null,"abstract":"In this paper, a modification of the Angelov DC I/V model is proposed with the aim of improving its accuracy in the back-off condition under Class-B operation yet preserving its excellent prediction capabilities under high output power and saturated operations. Dispersion effects and capacitances are modelled by well-established techniques. As validation, the predictions of the model on S-parameters and load-pull circles at different bias conditions and different input power levels are shown.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120988397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT 基于InP DHBT的峰值输出功率为-11 dBm的0.5 THz信号源
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909415
M. Hossain, N. Weimann, M. Brahem, O. Ostinelli, C. Bolognesi, W. Heinrich, V. Krozer
{"title":"A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT","authors":"M. Hossain, N. Weimann, M. Brahem, O. Ostinelli, C. Bolognesi, W. Heinrich, V. Krozer","doi":"10.23919/EuMIC.2019.8909415","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909415","url":null,"abstract":"This paper presents a 0.5 THz oscillator, realized using a transferred-substrate (TS) 0.3 μm InP DHBT process. It delivers -11 dBm peak output power. The DC consumption is only 15 mW from a 1.6 volts power supply, which corresponds to 0.5 % peak DC-to-RF efficiency. The oscillator exhibits the highest efficiency of a millimeter-wave frequency source beyond 400 GHz reported to date. The core area of the circuit is only 0.6 x 0.6 mm2.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126552221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 23-31 GHz Robust Low-Noise Amplifier with 1.1 dB Noise Figure and 28 dBm Psat 具有1.1 dB噪声系数和28 dBm Psat的23-31 GHz鲁棒低噪声放大器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909614
Penghui Zheng, Shiyong Zhang, Jianxing Xu, Rong Wang, X. Tong
{"title":"A 23-31 GHz Robust Low-Noise Amplifier with 1.1 dB Noise Figure and 28 dBm Psat","authors":"Penghui Zheng, Shiyong Zhang, Jianxing Xu, Rong Wang, X. Tong","doi":"10.23919/EuMIC.2019.8909614","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909614","url":null,"abstract":"A 23-31 GHz Monolithic Microwave Integrated Circuit (MMIC) low-noise Amplifier (LNA) based on AlGaN/GaN on Si technology from OMMIC is presented in this paper. Common-source topology with inductive source feedback is utilized for simultaneous noise and input match. Measurement results show that the LNA has a gain of more than 22 dB while achieving an average noise Figure (NF) of 1.1 dB over the designed band and the minimum value of 0.93 dB at 27 GHz. The three stage topology achieves high linearity, providing the 1-dB compression point output power (P}$_{1dB}$) of 23 dBm and a Saturated Output Power (Psat) of $sim28$ dBm. The robustness of this LNA was tested with 1 Watt continuous-wave input power at 27 GHz. The LNA survived after stress without obvious degradation. Compared with the traditional GaAs LNA, the GaN LNA has competitive NF and much higher linearity.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117301946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A High-Speed Millimeter-Wave QPSK Transmitter in 28nm CMOS FD-SOI for Polymer Microwave Fibers Applications 用于聚合物微波光纤的28nm CMOS FD-SOI高速毫米波QPSK发射机
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909564
Florian Voineau, B. Martineau, Mathilde Sié, A. Ghiotto, E. Kerhervé
{"title":"A High-Speed Millimeter-Wave QPSK Transmitter in 28nm CMOS FD-SOI for Polymer Microwave Fibers Applications","authors":"Florian Voineau, B. Martineau, Mathilde Sié, A. Ghiotto, E. Kerhervé","doi":"10.23919/EuMIC.2019.8909564","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909564","url":null,"abstract":"Benefiting from considerable progress in the design of low-power, low cost and high-speed millimeter-wave circuits, Polymer Microwave Fibers (PMF) are gaining interest in the context of serial links. In this work, an innovative dual-band Quadrature Phase Shift Keying (QPSK) architecture, which is based on integrated wideband and low loss differential hybrid couplers, is proposed to increase data rate capability while still preserving low power and moderate range potentials. A circuit demonstrator in 28 nm CMOS FD-SOI is presented to validate the concepts. It achieves fifth harmonic locking on a wide continuous locking range and realizes 9 Gb/s data rate in the E-band.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114116582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 5 to 18GHz, 10W GaN Power Amplifier Using Non-Distributed Approach 一种采用非分布式方法的5 ~ 18GHz, 10W GaN功率放大器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909483
R. S. N'Gongo, G. Ujwala, K. Suman, K. Y. Varma, Ch.S.M. Jyothi, Pramod K. Singh
{"title":"A 5 to 18GHz, 10W GaN Power Amplifier Using Non-Distributed Approach","authors":"R. S. N'Gongo, G. Ujwala, K. Suman, K. Y. Varma, Ch.S.M. Jyothi, Pramod K. Singh","doi":"10.23919/EuMIC.2019.8909483","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909483","url":null,"abstract":"This contribution deals with the design of a wideband 10W power amplifier based on non-distributed approach using 0.25 $mu$m AlGaN/GaN on SiC substrate. Due to the moderate power density of the process, the power amplifier has been designed using the non-distributed (conventional common source) approach with class AB operation. Thus, Gain flatness and output power and PAE become hard to maintain throughout the frequency bandwidth in non-distributed topology. Fabricated Power amplifier exhibits a power gain of 5dB and greater than 10W of saturated Power.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114109254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies 高性能GaAs和GaN毫米波单片技术的噪声比较研究
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909484
W. Ciccognani, S. Colangeli, A. Serino, L. Pace, S. Fenu, P. Longhi, E. Limiti, J. Poulain, R. Leblanc
{"title":"Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies","authors":"W. Ciccognani, S. Colangeli, A. Serino, L. Pace, S. Fenu, P. Longhi, E. Limiti, J. Poulain, R. Leblanc","doi":"10.23919/EuMIC.2019.8909484","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909484","url":null,"abstract":"This paper provides an assessment between two MMIC foundry processes for millimetre-wave high-performance receiver applications, namely, OMMIC’s 70 nm GaAs and 60 nm GaN-on-Si processes. To do so, a characterization and modelling campaign was carried out on transistors provided by OMMIC for the two processes, whose commercial names are D007IH (70 nm GaAs) and D006GH (60 nm GaN). The resulting models were employed to design several test vehicle Low-Noise Amplifiers (LNA) operating above 30 GHz. The GaAs LNAs have been manufactured and characterized, while the GaN-on-Si LNAs are being manufactured. The initial outcome of the assessment is that GaAs is still ahead if Noise Figure is the crucial and mandatory requirement. GaN-on-Si, on the other hand, proves to be a viable solution if a – slightly – higher Noise Figure is acceptable. Moreover, the benefits of GaN-on-Si, with respect to GaAs, are higher robustness, output power, linearity, and higher integration capability with CMOS technologies.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125477021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Proceedings of the 14th European Microwave Integrated Circuits Conference Degradation of Ka band GaN Low-Noise Amplifier under High Input Power Stress 第14届欧洲微波集成电路会议论文集。高输入功率应力下Ka波段GaN低噪声放大器的退化
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909413
X. Tong, Rong Wang, Shiyong Zhang, Jianxing Xu, Penghui Zheng, Fengxiang Chen
{"title":"Proceedings of the 14th European Microwave Integrated Circuits Conference Degradation of Ka band GaN Low-Noise Amplifier under High Input Power Stress","authors":"X. Tong, Rong Wang, Shiyong Zhang, Jianxing Xu, Penghui Zheng, Fengxiang Chen","doi":"10.23919/EuMIC.2019.8909413","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909413","url":null,"abstract":"A 22-30 GHz gallium nitride (GaN) low-noise amplifier (LNA) with a noise Figure (NF) of 0.87-1.51 dB is presented in this work. This LNA was fabricated with 100 nm gate-length AlN/GaN on silicon (Si) microwave monolithic integrated circuit (MMIC) process. The linear gain is 14-17 dB with input/output return loss over 10 dB across the band. To investigate the robustness of this LNA, 1 Watt continuous wave (CW) at 27 GHz was stressed on the input port of LNA. The decrease of gain and increase of NF were found after stress. Experimental research and first-principles calculations were carried out to investigate the physical mechanism of theses degradations, which indicate that the dehydrogenation of VGaH3 complexes in GaN channel caused the decrease of gain and the creation of VAl-H4 in the aluminum nitride (AlN) barrier caused the increase of NF.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123605825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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