R. S. N'Gongo, G. Ujwala, K. Suman, K. Y. Varma, Ch.S.M. Jyothi, Pramod K. Singh
{"title":"一种采用非分布式方法的5 ~ 18GHz, 10W GaN功率放大器","authors":"R. S. N'Gongo, G. Ujwala, K. Suman, K. Y. Varma, Ch.S.M. Jyothi, Pramod K. Singh","doi":"10.23919/EuMIC.2019.8909483","DOIUrl":null,"url":null,"abstract":"This contribution deals with the design of a wideband 10W power amplifier based on non-distributed approach using 0.25 $\\mu$m AlGaN/GaN on SiC substrate. Due to the moderate power density of the process, the power amplifier has been designed using the non-distributed (conventional common source) approach with class AB operation. Thus, Gain flatness and output power and PAE become hard to maintain throughout the frequency bandwidth in non-distributed topology. Fabricated Power amplifier exhibits a power gain of 5dB and greater than 10W of saturated Power.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 5 to 18GHz, 10W GaN Power Amplifier Using Non-Distributed Approach\",\"authors\":\"R. S. N'Gongo, G. Ujwala, K. Suman, K. Y. Varma, Ch.S.M. Jyothi, Pramod K. Singh\",\"doi\":\"10.23919/EuMIC.2019.8909483\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This contribution deals with the design of a wideband 10W power amplifier based on non-distributed approach using 0.25 $\\\\mu$m AlGaN/GaN on SiC substrate. Due to the moderate power density of the process, the power amplifier has been designed using the non-distributed (conventional common source) approach with class AB operation. Thus, Gain flatness and output power and PAE become hard to maintain throughout the frequency bandwidth in non-distributed topology. Fabricated Power amplifier exhibits a power gain of 5dB and greater than 10W of saturated Power.\",\"PeriodicalId\":228725,\"journal\":{\"name\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EuMIC.2019.8909483\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 5 to 18GHz, 10W GaN Power Amplifier Using Non-Distributed Approach
This contribution deals with the design of a wideband 10W power amplifier based on non-distributed approach using 0.25 $\mu$m AlGaN/GaN on SiC substrate. Due to the moderate power density of the process, the power amplifier has been designed using the non-distributed (conventional common source) approach with class AB operation. Thus, Gain flatness and output power and PAE become hard to maintain throughout the frequency bandwidth in non-distributed topology. Fabricated Power amplifier exhibits a power gain of 5dB and greater than 10W of saturated Power.
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