High Robustness S-Band GaN Based LNA

Zineb Ouarch Provost, Laurent Caillé, M. Camiade, M. Olivier, David Leclerc, C. Tolant, M. Stanislawiak
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引用次数: 5

Abstract

A robust full-MMIC S-band Low Noise Amplifier including power limiter based on envelope detector and Cold FET power reflector is presented. The robust LNA is based on $0.25 \mu m$ UMS GaN technology and exhibits high Input Power-handling up to 40W over 2-4GHz bandwidth associated to measured Recovery Time lower than $0.5 \mu s$. Furthermore, the LNA noise Figure performance is lower than 2dB with more than 22dB of small signal gain. These results are promising for the next frontend radar architectures.
基于高鲁棒s波段GaN的LNA
提出了一种基于包线检测器和冷场效应管功率反射器的全mmic s波段鲁棒低噪声放大器。稳健的LNA基于$0.25 \ μ m$ UMS GaN技术,在2-4GHz带宽上具有高达40W的高输入功率处理,相关的测量恢复时间低于$0.5 \ μ s$。此外,LNA噪声图性能低于2dB,信号增益大于22dB。这些结果为下一代前端雷达架构带来了希望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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