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EuMIC 2019 Detailed Author Index EuMIC 2019详细作者索引
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/eumic.2019.8909496
Abdalla, Josep Maria
{"title":"EuMIC 2019 Detailed Author Index","authors":"Abdalla, Josep Maria","doi":"10.23919/eumic.2019.8909496","DOIUrl":"https://doi.org/10.23919/eumic.2019.8909496","url":null,"abstract":"A Abdalla, Mohamed A.Y. (Cairo University, Egypt) 330 C 20–44GHz Mismatch Tolerant Programmable Dynamic Range with Inherent CMRR Square Law Detector for AGC Applications (EuMC/EuMIC06-3) Acri, Giuseppe (RFIC-Lab (EA 7520), France) 144 C Compact and Performing Transmission Lines for mm-Wave Circuits Design in Advanced CMOS Technology (EuMIC10-1) Agüero, Jose María (TTI, Spain) (NA) C Challenges & Solutions of High Frequency and High Output Power GaN-Based SSPAs (EuMC/EuMIC03-1) Ahmadi, E. (University of California at Santa Barbara, USA) 64 C Demonstration of 30GHz OIP3/PDC > 10dB by mm-Wave N-Polar Deep Recess MISHEMTs (EuMIC05-4) Ahmed, Faisal (DICE, Austria) 100 C A D-Band Fully-Integrated 2-RX, 1-TX FMCW Radar Sensor with 13dBm Output Power (EuMIC07-4) Aikio, Janne P. (University of Oulu, Finland) 17 C Broadband Linearization Technique for mmWave Circuits (EuMIC01-5) Aktug, Ahmet (Aselsan, Turkey) 116 C A High Gain Ka-Band Asymmetrical GaAs Doherty Power Amplifier MMIC for 5G Applications (EuMIC08-4) Albrecht, John (Michigan State University, USA) 250 C A 28–60GHz SiGe HBT LNA with 2.4–3.4dB Noise Figure (EuMC/EuMIC01-5)","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130101302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 2-38 GHz Linear GaAs pHEMT TIA for a Quasi-Coherent Optical Receiver 一种用于准相干光接收机的2- 38ghz线性GaAs pHEMT TIA
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909685
G. S. Valdecasa, J. Jensen, Morten Didriksen, T. Johansen
{"title":"A 2-38 GHz Linear GaAs pHEMT TIA for a Quasi-Coherent Optical Receiver","authors":"G. S. Valdecasa, J. Jensen, Morten Didriksen, T. Johansen","doi":"10.23919/EuMIC.2019.8909685","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909685","url":null,"abstract":"This paper presents the design and testing of a linear transimpedance amplifier (TIA) in a GaAs pHEMT technology. The TIA has been developed for integration within an optical receiver using a quasi-coherent technology. The maximum measured differential transimpedance is 63 dB $Omega$, with a 3 dB operating frequency range from 2 to 38 GHz. The group delay variation is within ± 10 ps from 5 to 32 GHz, and the maximum input current for linear operation is 2 mA peak-to-peak at the 1 dB compression point.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129118753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 35-39 GHz CMOS Linearized Receiver with 2 dBm IIP3 and 16.8 dBm OIP3 for the 5G Systems 用于5G系统的35-39 GHz CMOS线性化接收器，IIP3为2dbm, OIP3为16.8 dBm
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909517
Chun-Nien Chen, Ying Chen, Tai-Yu Kuo, Huei Wang
{"title":"A 35-39 GHz CMOS Linearized Receiver with 2 dBm IIP3 and 16.8 dBm OIP3 for the 5G Systems","authors":"Chun-Nien Chen, Ying Chen, Tai-Yu Kuo, Huei Wang","doi":"10.23919/EuMIC.2019.8909517","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909517","url":null,"abstract":"A35-39 GHz linearized differential in-phase and quadrature components (I/Q) receiver (Rx) fabricated in 65-nm CMOS for 5G massive front-ends phased-array systems is introduced. The two linearization techniques, multi-gate transistor (MGTR) and splitting cascode transistors (SCTR) linearizers, are adopted at RF amplifier and down-conversion mixers respectively which greatly cancel the 3rd-order intermodulation (IM3) power with P1dB, IP3, and 3rd-harmonic rejection ratio (RR3) enhancements. According to measurements at RF 38 GHz in normal/linearized modes, the IP1dB/OP1dB showed 6 dB/2.4 dB enhancement (IP1dB improved from -19 to -13 dBm, and OP1dB improved from -1.6 to 0.8 dBm.) with 3.6 dB conversion gain (CG) degeneration (18. 4 dB decreased to 14.8 dB). The power consumption is 62.5 mW. According to two-tone measurements, the IM3 power decreased 20-28dB with IIP3lOIP3 enhancement of 13 dB/9.4 dB (IIP3 improved from -11 to 2 dBm, and OIP3 improved from 7.4 to 16.8 dBm The maximum IF power with RR3 value < -40 dBc improved 7 dB (-12 dBm improved to -5 dBm). Furthermore, the quadrature amplitude modulation (QAM) carrier demodulation test is demonstrated. In larger RF/IF power region, the measurement exhibits that the 256 QAM constellation diagram in normal mode is dispersed but recovered in linearized mode due to the improved RR3. Compared with republications, the proposed Rx has good IP1dB, OIP3 values, significant IP1dB, IP3, RR3 improvement with IM3 suppression. This linearized Rx is satisfactory for 5G massive front-ends phased-array systems.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131949618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Differential Traveling Wave Active Power Divider in 130 nm SiGe:BiCMOS Technology for Application in Receiver Synchronization 130 nm SiGe差分行波有源功率分压器:BiCMOS技术在接收机同步中的应用
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909618
E. R. Bammidi, A. R. Javed, K. KrishneGowda, I. Kallfass
{"title":"A Differential Traveling Wave Active Power Divider in 130 nm SiGe:BiCMOS Technology for Application in Receiver Synchronization","authors":"E. R. Bammidi, A. R. Javed, K. KrishneGowda, I. Kallfass","doi":"10.23919/EuMIC.2019.8909618","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909618","url":null,"abstract":"This paper presents the design of a differential traveling wave active power divider in 130 nm SiGe:C BiCMOS technology with ${mathrm {{f}_{ t}/ {f}_{max}}}$ of 250/300 GHz. Utilizing the inherent properties of a traveling wave topology and a loss compensation technique with input emitter followers, a forward small signal gain of 10 dB for a 3-dB bandwidth of 42 GHz has been achieved. The cross-talk between the input and the output lines was avoided using ground isolation layer. A symmetric layout was ensured in order to achieve matched outputs with a maximum difference in gain of 0.5 dB. The measured input compression point ${mathrm {{P}_{-1dB}}}$ is 2 dBm. With each side consuming a DC power of 250 mW, the active power divider consumes a total DC power of 500 mW.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126570020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-speed Linear GaN Technology with a record Efficiency in Ka-band 在ka波段具有创纪录效率的高速线性GaN技术
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909437
J. Moon, J. Wong, B. Grabar, M. Antcliffe, Peter Chen, E. Arkun, I. Khalaf, A. Corrion
{"title":"High-speed Linear GaN Technology with a record Efficiency in Ka-band","authors":"J. Moon, J. Wong, B. Grabar, M. Antcliffe, Peter Chen, E. Arkun, I. Khalaf, A. Corrion","doi":"10.23919/EuMIC.2019.8909437","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909437","url":null,"abstract":"We report the first demonstration of graded-channel GaN HEMTs operating in the millimeter-wave frequency range. At 30 GHz, these graded-channel GaN HEMTs demonstrated excellent PAE of 72% at associated power density of 2 W/mm. The measured PAE and output power density shows great improvement over other mm-wave T-gated AlGaN/GaN HEMT devices. Under two-tone linearity characterization at 30 GHz, PAE of about 50% was demonstrated with C/IM3 of 30 dBc, which is very promising for mm-wave linear and efficient amplifiers without digital pre-distortion.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121692372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
3.6 GHz Integrated Inverse Class-E Amplifier with Polar Modulation Capability 具有极调制能力的3.6 GHz集成反e类放大器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909426
Andres Seidel, Albrecht Gündel, Martin Kreiβig, P. Starke, J. Wagner, F. Ellinger
{"title":"3.6 GHz Integrated Inverse Class-E Amplifier with Polar Modulation Capability","authors":"Andres Seidel, Albrecht Gündel, Martin Kreiβig, P. Starke, J. Wagner, F. Ellinger","doi":"10.23919/EuMIC.2019.8909426","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909426","url":null,"abstract":"This work presents an inverse class-E switching power amplifier with the capability of phase and amplitude modulation. Advantages of this amplifier topology, like a higher integrability caused by smaller inductors, compared to an conventional shunt-C/serial-filtered class-E amplifier will be made clear. This paper outlines the conceptual approach for an analog RF front-end polar transmitter without a mixer. The circuit is designed for low-power mobile applications at 3.6 GHz and fabricated in a 45 nm CMOS process. In laboratory measurements, the amplifiers system efficiency and drain efficiency (DE) at a maximum output power of 6.8 dBm reaches 36.9 % and 49.0 %, respectively. The active chip core size is merely 0.21 mm2.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127791159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Tune-All Substrate-Integrated-Waveguide (SIW) Bandpass Filters 调谐所有基板集成波导(SIW)带通滤波器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909423
Martin Deng, D. Psychogiou
{"title":"Tune-All Substrate-Integrated-Waveguide (SIW) Bandpass Filters","authors":"Martin Deng, D. Psychogiou","doi":"10.23919/EuMIC.2019.8909423","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909423","url":null,"abstract":"This paper reports on a new type of substrate- integrated-waveguide (SIW) bandpass filters (BPFs) with multiple levels of transfer function adaptivity. They are based on series- cascaded in-line coaxial resonators and a coaxial-resonator-based transmission-zero (TZ) generation section. The proposed architecture allows the realization of the following reconfigurable characteristics: i) tunable center frequency with either constant absolute bandwidth (BW) or constant fractional bandwidth (FBW), ii) tunable BW, and iii) an intrinsically switched-off response. Alternative realization schemes using parallel and series resonators are discussed with the purpose of improving the stopband performance. For proof-of-concept demonstration purposes an L-band SIW-based BPF prototype was designed, manufactured and measured. It exhibited the following RF performance characteristics. Center frequency tuning between 1.24 and 1.8 GHz (1.5: tuning ratio), BW tuning between 190 and 78 MHz (2.44:1 tuning ratio) and intrinsic switching-off with > 30 dB of isolation in the range between 0.75 and 2.25 GHz.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132840008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High Robustness S-Band GaN Based LNA 基于高鲁棒s波段GaN的LNA
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909569
Zineb Ouarch Provost, Laurent Caillé, M. Camiade, M. Olivier, David Leclerc, C. Tolant, M. Stanislawiak
{"title":"High Robustness S-Band GaN Based LNA","authors":"Zineb Ouarch Provost, Laurent Caillé, M. Camiade, M. Olivier, David Leclerc, C. Tolant, M. Stanislawiak","doi":"10.23919/EuMIC.2019.8909569","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909569","url":null,"abstract":"A robust full-MMIC S-band Low Noise Amplifier including power limiter based on envelope detector and Cold FET power reflector is presented. The robust LNA is based on $0.25 mu m$ UMS GaN technology and exhibits high Input Power-handling up to 40W over 2-4GHz bandwidth associated to measured Recovery Time lower than $0.5 mu s$. Furthermore, the LNA noise Figure performance is lower than 2dB with more than 22dB of small signal gain. These results are promising for the next frontend radar architectures.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"744 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114001690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A Novel Injection-Locked Frequency Tripler for V-band Applications 一种用于v波段的新型注入锁频三倍器
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909429
Yu‐Hsin Chang, Yen-Chung Chiang
{"title":"A Novel Injection-Locked Frequency Tripler for V-band Applications","authors":"Yu‐Hsin Chang, Yen-Chung Chiang","doi":"10.23919/EuMIC.2019.8909429","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909429","url":null,"abstract":"In this paper, a novel injection-locked frequency tripler (ILFT) implemented in the 90-nm CMOS process for V- band applications is presented. By adopting stacked CMOS cross-coupled pairs, a differential harmonic current injection circuit, and a resonator network technique, the locking range, the harmonic rejection ratio (HRR), and the power consumption of the proposed ILFT are improved. The locking range is from 61.2 to 64.2 GHz at an input power level of 0 dBm. The proposed ILFT has 30 dBc and 34 dBc to injected fundamental and second- order harmonic suppression, respectively. The core circuit consumes 7.48 mW dc power from a 1.1-V supply.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115668537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 后退操作下精度提高的GaN HEMT模型
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI: 10.23919/EuMIC.2019.8909567
V. Vadalà, A. Raffo, K. Kikuchi, Hiroshi Yamamoto, G. Bosi, Kazutaka Inoue, N. Ui, G. Vannini
{"title":"GaN HEMT Model with Enhanced Accuracy under Back-off Operation","authors":"V. Vadalà, A. Raffo, K. Kikuchi, Hiroshi Yamamoto, G. Bosi, Kazutaka Inoue, N. Ui, G. Vannini","doi":"10.23919/EuMIC.2019.8909567","DOIUrl":"https://doi.org/10.23919/EuMIC.2019.8909567","url":null,"abstract":"In this paper, a modification of the Angelov DC I/V model is proposed with the aim of improving its accuracy in the back-off condition under Class-B operation yet preserving its excellent prediction capabilities under high output power and saturated operations. Dispersion effects and capacitances are modelled by well-established techniques. As validation, the predictions of the model on S-parameters and load-pull circles at different bias conditions and different input power levels are shown.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"14 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120988397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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