J. Moon, J. Wong, B. Grabar, M. Antcliffe, Peter Chen, E. Arkun, I. Khalaf, A. Corrion
{"title":"在ka波段具有创纪录效率的高速线性GaN技术","authors":"J. Moon, J. Wong, B. Grabar, M. Antcliffe, Peter Chen, E. Arkun, I. Khalaf, A. Corrion","doi":"10.23919/EuMIC.2019.8909437","DOIUrl":null,"url":null,"abstract":"We report the first demonstration of graded-channel GaN HEMTs operating in the millimeter-wave frequency range. At 30 GHz, these graded-channel GaN HEMTs demonstrated excellent PAE of 72% at associated power density of 2 W/mm. The measured PAE and output power density shows great improvement over other mm-wave T-gated AlGaN/GaN HEMT devices. Under two-tone linearity characterization at 30 GHz, PAE of about 50% was demonstrated with C/IM3 of 30 dBc, which is very promising for mm-wave linear and efficient amplifiers without digital pre-distortion.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"High-speed Linear GaN Technology with a record Efficiency in Ka-band\",\"authors\":\"J. Moon, J. Wong, B. Grabar, M. Antcliffe, Peter Chen, E. Arkun, I. Khalaf, A. Corrion\",\"doi\":\"10.23919/EuMIC.2019.8909437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the first demonstration of graded-channel GaN HEMTs operating in the millimeter-wave frequency range. At 30 GHz, these graded-channel GaN HEMTs demonstrated excellent PAE of 72% at associated power density of 2 W/mm. The measured PAE and output power density shows great improvement over other mm-wave T-gated AlGaN/GaN HEMT devices. Under two-tone linearity characterization at 30 GHz, PAE of about 50% was demonstrated with C/IM3 of 30 dBc, which is very promising for mm-wave linear and efficient amplifiers without digital pre-distortion.\",\"PeriodicalId\":228725,\"journal\":{\"name\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EuMIC.2019.8909437\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-speed Linear GaN Technology with a record Efficiency in Ka-band
We report the first demonstration of graded-channel GaN HEMTs operating in the millimeter-wave frequency range. At 30 GHz, these graded-channel GaN HEMTs demonstrated excellent PAE of 72% at associated power density of 2 W/mm. The measured PAE and output power density shows great improvement over other mm-wave T-gated AlGaN/GaN HEMT devices. Under two-tone linearity characterization at 30 GHz, PAE of about 50% was demonstrated with C/IM3 of 30 dBc, which is very promising for mm-wave linear and efficient amplifiers without digital pre-distortion.
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