V. Vadalà, A. Raffo, K. Kikuchi, Hiroshi Yamamoto, G. Bosi, Kazutaka Inoue, N. Ui, G. Vannini
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GaN HEMT Model with Enhanced Accuracy under Back-off Operation
In this paper, a modification of the Angelov DC I/V model is proposed with the aim of improving its accuracy in the back-off condition under Class-B operation yet preserving its excellent prediction capabilities under high output power and saturated operations. Dispersion effects and capacitances are modelled by well-established techniques. As validation, the predictions of the model on S-parameters and load-pull circles at different bias conditions and different input power levels are shown.
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