2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Pulsed laser beam identification of SEEsensitive regions and observation of additional failure modes relevant for RHA in Digital Isolators 数字隔离器中与RHA相关的脉冲激光敏感区识别和附加失效模式的观察
R. Wolf, M. Steffens, S. Metzger, P. Beck, M. Wind, M. Poizat
{"title":"Pulsed laser beam identification of SEEsensitive regions and observation of additional failure modes relevant for RHA in Digital Isolators","authors":"R. Wolf, M. Steffens, S. Metzger, P. Beck, M. Wind, M. Poizat","doi":"10.1109/RADECS.2017.8696235","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696235","url":null,"abstract":"A pulsed laser mapping of Digital Isolators, previously characterized with heavy ions at RADEF, not only identified the regions sensitive to single-event effects (SEE) but also revealed additional failure modes (i.e. high-frequency ringing and latchup) not seen during heavy ion testing. So this device was considered latchup free up to an LET of 60 MeV cm2/mg. But those effects could also be induced by highly penetrating particles and hence must be taken into account for radiation hardness assurance (RHA). In addition it was possible to measure the sensitive area for the different types of SEE at different laser energies.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114961112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
ELDRS Characterization to of Texas Instruments LMP2012 RRO Precision Amplifier 德州仪器LMP2012 RRO精密放大器的ELDRS特性研究
K. Kruckmeyer
{"title":"ELDRS Characterization to of Texas Instruments LMP2012 RRO Precision Amplifier","authors":"K. Kruckmeyer","doi":"10.1109/RADECS.2017.8696233","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696233","url":null,"abstract":"TI’s space grade LMP2012 is a dual, rail-to-rail output, precision chopper-stabilized operational amplifier. It went through total ionizing dose testing at 10 mrad/s and was found to be ELDRS-free.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115108085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The STG DICE Cell with the Decoder for Reading Data in Steady and Unsteady States for Hardened SRAM 带译码器的STG DICE单元用于强化SRAM的稳态和非稳态读取
Yu. V. Katunin, V. Stenin
{"title":"The STG DICE Cell with the Decoder for Reading Data in Steady and Unsteady States for Hardened SRAM","authors":"Yu. V. Katunin, V. Stenin","doi":"10.1109/RADECS.2017.8696115","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696115","url":null,"abstract":"The new design technique is proposed for memory elements, which are not sensitive to induced single upsets. This is the STG DICE cell with the new scheme of the decoder for reading data in steady and unsteady states of the cell’s nodes. The topology of the STG DICE cell (Spaced Transistor Groups DICE) is different from the standard DICE in that the transistors are devided into two groups so that the impact of single nuclear particles on one group does not lead to upset of this cell. The 65 nm CMOS DICE with the new scheme of the decoder for reading data was simulated using TCAD methodology. The decoder consists of two tristate inverters and two normal inverters. In combinational logic of the decoder can be short-term noise pulses in the range of the linear energy transfer of single particles on the tracks of 20–80 MeV $times $ cm2/mg.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"227 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115169769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations 用蒙特卡罗模拟识别静态随机存储器中脉冲中子诱导的扰动爆发
Chao Qi, Wei Chen, Yan Liu, Xiaoming Jin, Shanchao Yang, Xiaoqiang Guo
{"title":"Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations","authors":"Chao Qi, Wei Chen, Yan Liu, Xiaoming Jin, Shanchao Yang, Xiaoqiang Guo","doi":"10.1109/RADECS.2017.8696159","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696159","url":null,"abstract":"In contrast to the accumulation of upsets at a relatively slow rate in static random access memories (SRAMs) caused by neutrons at the steady-state modes of nuclear reactors, pulsed neutrons generated at a pulsed-state mode with a significantly high flux induce a burst of upsets in a short time (<102 ms). Herein, pulsed-neutron experiments are conducted on SRAMs, showing that the upset cross sections differ as the pulsed-state mode changes, indicating the nonlinearity between the upset bits and the neutron fluence, unlike the linear accumulation of single event upsets (SEUs) with increasing neutron fluence at the steady-state modes. To identify the upset pattern of pulsed-neutron-induced upset bursts, the experimental results are compared to Monte-Carlo simulations, which calculate the growing upset bits of different accumulated upset types and simulate the upset accumulation process at steady-state modes. The experimental results exhibit consistent and precise accordance with the simulation results, indicating that the pulsed-neutron induced upset bursts are caused by the same accumulating process as that of SEUs at the steady-state modes. The observed nonlinearity is attributed to the uncertainty of neutron-fluence measurements, uncounted secondary upsets, and some unidentified systematic errors in cross-section calculations. The identification of pulsed-neutron-induced upset bursts with the accumulation of SEUs can convincingly distinguish such upset bursts from dose rate upset (DRU) bursts.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123185435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR 1.2 Gb/s半定制串行化器的质子束设计与测试
M. Lupi, G. Rinella, M. Bonora, H. Hillemanns, D. Kim, T. Kugathasan, A. Lattuca, G. Mazza, K. Sielewicz, W. Snoeys
{"title":"Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR","authors":"M. Lupi, G. Rinella, M. Bonora, H. Hillemanns, D. Kim, T. Kugathasan, A. Lattuca, G. Mazza, K. Sielewicz, W. Snoeys","doi":"10.1109/RADECS.2017.8696110","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696110","url":null,"abstract":"This contribution describes the design of a semi-custom serialiser in 180nm CMOS technology. The design is verified for SEU immunity and BER with 30MeV protons.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"27 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133354425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of SiH Groups on ELDRS Quantified by XPS with Combined Use of Gamma-ray and Electron-beam Irradiation SiH基团对伽玛和电子束联合XPS定量ELDRS的影响
Shintaro Toguchi, D. Kobayashi, T. Makino, T. Ohshima, K. Hirose
{"title":"Effects of SiH Groups on ELDRS Quantified by XPS with Combined Use of Gamma-ray and Electron-beam Irradiation","authors":"Shintaro Toguchi, D. Kobayashi, T. Makino, T. Ohshima, K. Hirose","doi":"10.1109/RADECS.2017.8696199","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696199","url":null,"abstract":"There have been no studies to date estimating the quantitative relation between the increase of interface traps and SiH groups in silicon dioxide films for the effects of total ionizing dose including enhanced low-dose-rate sensitivity (ELDRS). In this study, SiH groups densities in silicon dioxide films are measured and compared with interface trap densities developed at different dose rates to evaluate the impacts of direct proton release mechanism on ELDRS by X-ray photoelectron spectroscopy (XPS) analysis with the combined use of gamma-ray and electron-beam irradiation. The measurement results in this study clearly show that ELDRS depends linearly on SiH groups densities. The linear relationship demonstrates ELDRS is caused by the direct proton release mechanism. The order of magnitude of ELDRS we observed is almost the same as the experimental results reported previously. We emphasize that our results provide the first experimental evidence that the direct proton release mechanism is a critical mechanism affecting ELDRS in addition to the space charge model and H2 cracking.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131390793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Destructive Failure Heavy Ion Testing of Different Amplifiers 不同放大器的破坏性失效重离子测试
A. Kalashnikova, P. Chubunov, V. Anashin, Sergey A. Iakovlev, A. Koziukov, K. Z. Faradian, A. M. Chlenov
{"title":"Destructive Failure Heavy Ion Testing of Different Amplifiers","authors":"A. Kalashnikova, P. Chubunov, V. Anashin, Sergey A. Iakovlev, A. Koziukov, K. Z. Faradian, A. M. Chlenov","doi":"10.1109/RADECS.2017.8696112","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696112","url":null,"abstract":"In this work we present single event effects (SEE) test results for selection of amplifiers which are potential space candidates obtained at Roscosmos Test Facilities during test campaigns in 2016.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132980305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A novel combined charge balance termination structure insensitive to ionizing radiation effect 一种不受电离辐射影响的新型组合电荷平衡终端结构
Limei Song, Chao Xiao, Yanfei Zhang, Botao Sun, Lixin Wang, Jiajun Luo
{"title":"A novel combined charge balance termination structure insensitive to ionizing radiation effect","authors":"Limei Song, Chao Xiao, Yanfei Zhang, Botao Sun, Lixin Wang, Jiajun Luo","doi":"10.1109/RADECS.2017.8696162","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696162","url":null,"abstract":"Ionizing radiation effects on termination structures employing field limiting rings FLR and/or equipotential field plates have been actively studied to achieve radiation tolerance for more than two decades. However, ionizing radiation effects on charge balance termination structure have not been investigated and reported. In this paper, sensitivity of charge balance termination structure to ionizing radiation was experimentally identified for the first time and is attributed to the radiation-induced oxide trapped charges in the field oxide. It was demonstrated that these charges alter the potential at the surface and affects the breakdown voltage of charge balance termination using 3-D simulations. Based on the 3-D simulations results, a novel rad-hardened combined charge balance termination structure was proposed and optimized. The new termination structure is combined by normal charge balance termination, surface FLRs and field plates, which can improve the insensitivity of surface charge induced by ionizing radiation effect. A 300V super junction MOSFET employing novel insensitive charge balance termination structures were fabricated and exposed to Co-60 $gamma $-rays at room temperature with a total dose of 150krad(Si). The test results show that the degradation of breakdown voltage of this termination structure is less than 1V with a total dose up to 150krad(Si).","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"338 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133084984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation induced background characterization for a next generation of space telescope 下一代空间望远镜的辐射诱导背景特性
L. M. M. Sierra, I. Jun, P. Morrissey
{"title":"Radiation induced background characterization for a next generation of space telescope","authors":"L. M. M. Sierra, I. Jun, P. Morrissey","doi":"10.1109/RADECS.2017.8696142","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696142","url":null,"abstract":"A comprehensive Monte Carlo analysis was performed to model the space environment’s impact to a next generation of ultra-sensitive space telescope from radiation-induced background from various physical processes in representative spacecraft shielding materials.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129344828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AXEL lab.: Representative Ground Simulation for Investigating Radiation effects in Materials and Electronics 阿克塞尔实验室。研究材料和电子中辐射效应的典型地面模拟
S. Duzellier, L. Artola, G. Hubert, C. Inguimbert, T. Nuns, S. Lewandowski, T. Paulmier, B. Dirassen, R. Rey, C. Pons
{"title":"AXEL lab.: Representative Ground Simulation for Investigating Radiation effects in Materials and Electronics","authors":"S. Duzellier, L. Artola, G. Hubert, C. Inguimbert, T. Nuns, S. Lewandowski, T. Paulmier, B. Dirassen, R. Rey, C. Pons","doi":"10.1109/RADECS.2017.8696228","DOIUrl":"https://doi.org/10.1109/RADECS.2017.8696228","url":null,"abstract":"This paper describes the investigation capabilities at the AXEL lab. of ONERA. Van de Graaf machines and dedicated target chambers allow for studying radiation effects in materials and electronics and qualifying sub-systems for space missions.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116151990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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