1.2 Gb/s半定制串行化器的质子束设计与测试

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696110

M. Lupi, G. Rinella, M. Bonora, H. Hillemanns, D. Kim, T. Kugathasan, A. Lattuca, G. Mazza, K. Sielewicz, W. Snoeys

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引用次数: 0

摘要

这篇文章描述了180nm CMOS技术中半定制串行化器的设计。该设计在30MeV质子下具有SEU抗扰度和误差率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and Test with Proton Beam of a 1.2 Gb/s Semi-custom Serialiser Implemented in 180 nm CMOS with SEU Mitigation by TMR

This contribution describes the design of a semi-custom serialiser in 180nm CMOS technology. The design is verified for SEU immunity and BER with 30MeV protons.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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