Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations

Chao Qi, Wei Chen, Yan Liu, Xiaoming Jin, Shanchao Yang, Xiaoqiang Guo
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Abstract

In contrast to the accumulation of upsets at a relatively slow rate in static random access memories (SRAMs) caused by neutrons at the steady-state modes of nuclear reactors, pulsed neutrons generated at a pulsed-state mode with a significantly high flux induce a burst of upsets in a short time (<102 ms). Herein, pulsed-neutron experiments are conducted on SRAMs, showing that the upset cross sections differ as the pulsed-state mode changes, indicating the nonlinearity between the upset bits and the neutron fluence, unlike the linear accumulation of single event upsets (SEUs) with increasing neutron fluence at the steady-state modes. To identify the upset pattern of pulsed-neutron-induced upset bursts, the experimental results are compared to Monte-Carlo simulations, which calculate the growing upset bits of different accumulated upset types and simulate the upset accumulation process at steady-state modes. The experimental results exhibit consistent and precise accordance with the simulation results, indicating that the pulsed-neutron induced upset bursts are caused by the same accumulating process as that of SEUs at the steady-state modes. The observed nonlinearity is attributed to the uncertainty of neutron-fluence measurements, uncounted secondary upsets, and some unidentified systematic errors in cross-section calculations. The identification of pulsed-neutron-induced upset bursts with the accumulation of SEUs can convincingly distinguish such upset bursts from dose rate upset (DRU) bursts.
用蒙特卡罗模拟识别静态随机存储器中脉冲中子诱导的扰动爆发
在核反应堆的稳态模式下,中子在静态随机存取存储器(sram)中以相对缓慢的速度积累扰动,而在脉冲状态模式下产生的脉冲中子具有显著的高通量,可在短时间内(<102 ms)诱导扰动爆发。本文在sram上进行了脉冲中子实验,结果表明,随着脉冲态模式的变化,扰动截面不同,这表明扰动位与中子通量之间存在非线性关系,而不像稳态模式下单事件扰动(seu)随着中子通量的增加而线性累积。为了识别脉冲中子诱导扰动爆发的扰动模式,将实验结果与蒙特卡罗模拟结果进行了比较,蒙特卡罗模拟计算了不同累积扰动类型的扰动位增长,并模拟了稳态模式下的扰动积累过程。实验结果与模拟结果一致且精确,表明脉冲中子诱发的扰动爆发与稳态模式下seu的累积过程相同。观察到的非线性归因于中子通量测量的不确定性、未计算的二次扰动和截面计算中一些未确定的系统误差。识别脉冲中子诱发的激波与seu积累可以令人信服地区分这种激波与剂量率激波(DRU)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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