SPIE Defense + Security最新文献_第7页

Indium-bump-free antimonide superlattice membrane detectors on a silicon substrates 硅衬底上无铟碰撞的锑化物超晶格膜探测器

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224236

M. Zamiri, B. Klein, T. Schuler, S. Myers, F. Cavallo, S. Krishna

{"title":"Indium-bump-free antimonide superlattice membrane detectors on a silicon substrates","authors":"M. Zamiri, B. Klein, T. Schuler, S. Myers, F. Cavallo, S. Krishna","doi":"10.1117/12.2224236","DOIUrl":"https://doi.org/10.1117/12.2224236","url":null,"abstract":"We present an approach to realize antimonide based superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN based superlattice detectors are grown on top of a 60 nm Al0.6Ga0.4Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxiallift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123311287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

The metal-insulator-metal diodes for infrared energy harvesting and detection applications 用于红外能量收集和探测的金属-绝缘体-金属二极管

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224748

E. G. Arsoy, M. Inac, A. Shafique, M. Ozcan, Y. Gurbuz

{"title":"The metal-insulator-metal diodes for infrared energy harvesting and detection applications","authors":"E. G. Arsoy, M. Inac, A. Shafique, M. Ozcan, Y. Gurbuz","doi":"10.1117/12.2224748","DOIUrl":"https://doi.org/10.1117/12.2224748","url":null,"abstract":"The metal-insulator-metal (MIM) diodes are considered to be very attractive candidate for infrared energy harvesting and detection applications. The high speed and compatibility with integrated circuits (IC’s) makes MIM diodes good choice for infrared (IR) regime of the electromagnetic spectrum. Moreover, it is possible to obtain large volume of devices in same unit area due to smaller active area required for MIM diodes. The aim of this work is to design and develop MIM diodes for energy harvesting and IR detection. For this work three different sets of materials; Au-Al2O3-Al, Au-Cr2O3-Cr, Au-TiO2-Ti Al2O3, are used for fabricating MIM diodes. Furthermore, the effect of the insulator thickness and diode active areas are investigated for Au-Al2O3-Al MIM diode to study diode characteristics further. The optimization of fabrication processes in physical vapor deposition (PVD) systems for the MIM diodes resulted in the devices having high non-linearity and responsivity. The non-linearity of 80 μA/V2 and a responsivity of 15 A/W are achieved for Al-Al2O3-Au MIM diodes under low applied bias of 50 mV. The responsivity of Au-Cr2O3-Cr and Au-TiO2-Ti diodes with insulating layers of Cr2O3 and TiO2 are found to be 8 A/W and 2 A/W respectively.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127532013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Recent progress in MBE grown HgCdTe materials and devices at UWA 西澳大学MBE生长HgCdTe材料和器件的最新进展

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222997

R. Gu, W. Lei, J. Antoszewski, I. Madni, G. Umana-Menbreno, L. Faraone

引用次数: 4

High operation temperature mid-wavelength interband cascade infrared photodetectors grown on InAs substrate 在InAs衬底上生长的高温中波长带间级联红外光电探测器

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2225131

Yi Zhou, Jianxin Chen, Zhicheng Xu, Li He

引用次数: 4

Advantages of T2SL: results from production and new development at IRnova T2SL的优势:来自IRnova的生产和新发展

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2227466

L. Höglund, C. Asplund, R. Marcks von Würtemberg, A. Gamfeldt, H. Kataria, D. Lantz, S. Smuk, E. Costard, H. Martijn

{"title":"Advantages of T2SL: results from production and new development at IRnova","authors":"L. Höglund, C. Asplund, R. Marcks von Würtemberg, A. Gamfeldt, H. Kataria, D. Lantz, S. Smuk, E. Costard, H. Martijn","doi":"10.1117/12.2227466","DOIUrl":"https://doi.org/10.1117/12.2227466","url":null,"abstract":"IRnova has been manufacturing mid wave infrared (MWIR) detectors based on InAs/GaSb type-II superlattices (T2SL) since 2014. Results from the first years of production of MWIR focal plane arrays (FPAs) with 320 x 256 pixels on 30 μm pitch using the ISC9705 readout integrated circuit (ROIC) is presented in terms of operability, temporal and spatial noise equivalent temperature difference (NETD) and other key production parameters. Results on image stability of T2SL detectors show that no deterioration of image quality over time can be observed. Furthermore it is shown that the non-uniformity correction remains stable even after repeated detector temperature cycles. Spatial and temporal NETD for fabricated mid wave arrays show a temporal NETD of 12 mK and a spatial NETD of 4 mK with f/2 optics and 8 ms integration time. When studied over a large scene temperature, the spatial noise is still less than 60 % of the temporal noise. Furthermore, 640 x 512 mid wave FPAs with 15 μm pitch using the ISC0403 ROIC are entering an industrialization phase. Temporal and spatial NETD values of 25 mK and 10 mK, respectively, are obtained with f/4 optics and 22 ms integration time and the operability is 99.85 %. A status update on the development of T2SL detectors for short wave, mid wave and long wave infrared wavelength regions for existing and new applications is given and recent development towards higher operating temperature, smaller pitch and larger FPA formats is presented.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122563759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Small SWaP TEC-less SWIR camera with current mirror pixel and temperature dependent non-uniformity corrections 小型SWaP无tec SWIR相机，具有当前镜像像素和温度相关的非均匀性校正

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224516

J. Nazemi, R. Brubaker

引用次数: 1

Extraction of static parameters to extend the EKV model to cryogenic temperatures 提取静态参数，将EKV模型扩展到低温

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2219734

Germano S. Fonseca, L. B. de Sá, A. Mesquita

{"title":"Extraction of static parameters to extend the EKV model to cryogenic temperatures","authors":"Germano S. Fonseca, L. B. de Sá, A. Mesquita","doi":"10.1117/12.2219734","DOIUrl":"https://doi.org/10.1117/12.2219734","url":null,"abstract":"The electric simulation models of CMOS devices provided by the foundries are valid at the standard temperature range of -55 to 125°C. These models are not suitable to the design of circuits intended to operate at cryogenic temperatures as is the case of cooled infrared readout circuits. To generate a library of CMOS electric simulation models valid at cryogenic temperatures, the characterization of wide and long CMOS transistors are investigated. The EKV2.6 model, which is an industry-standard compact simulation model for CMOS transistors, is used in this characterization. Due to its relatively small number of parameters the EKV2.6 model is well suited to the parameter extraction procedures when not disposing of an expensive automated parameter extraction system. It is shown that to provide an appropriate IV-characteristic fit to cryogenic temperature range it is sufficient to extract only five parameters - threshold voltage VT0, body effect GAMMA, Fermi potential PHI, transconductance factor KP, and the vertical characteristic field for mobility reduction E0. The proposed approach is tested in a standard 0.35μm/3.3V CMOS technology, employing extraction procedures recommended in the literature. Simulations are made with a BSIM3V3 standard library provided by the foundry changing the temperature parameter and with the generated library. The results are compared with the measurements. As expected, the simulations made with the generated library show a best agreement with the performed measurements at 77K than the simulations with the BSIM3V3 model. The proposed methodology is shown to be particularly effective above strong freeze-out temperature.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121016383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice InGaAs/GaAsSb超晶格短波红外探测器

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2229020

Chuan Jin, Qingqing Xu, Chengzhang Yu, Jianxin Chen

引用次数: 2

Mid and thermal infrared remote sensing at the Jet Propulsion Laboratory 喷气推进实验室的中红外和热红外遥感

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2225527

W. Johnson, S. Hook

{"title":"Mid and thermal infrared remote sensing at the Jet Propulsion Laboratory","authors":"W. Johnson, S. Hook","doi":"10.1117/12.2225527","DOIUrl":"https://doi.org/10.1117/12.2225527","url":null,"abstract":"The mid and thermal infrared (MTIR) for the Earth surface is defined between 3 and 14µm. In the outer solar system, objects are colder and their Planck response shifts towards longer wavelengths. Hence for these objects (e.g. icy moons, polar caps, comets, Europa), the thermal IR definition usually stretches out to 50µm and beyond. Spectroscopy has been a key part of this scientific exploration because of its ability to remotely determine elemental and mineralogical composition. Many key gas species such as methane, ammonia, sulfur, etc. also have vibrational bands which show up in the thermal infrared spectrum above the background response. Over the past few decades, the Jet Propulsion Laboratory has been building up a portfolio of technology to capture the MTIR for various scientific applications. Three recent sensors are briefly reviewed: The airborne Hyperspectral thermal emission spectrometer (HyTES), the ECOsystem Spaceborne Thermal Radiometer Experiment on Space Station (ECOSTRESS) and Mars Climate Sounder (MCS)/DIVINER. Each of these sensors utilize a different technology to provide a remote sensing product based on MTIR science. For example, HyTES is a push-brooming hyperspectral imager which utilizes a large format quantum well infrared photodetector (QWIP). The goal is to transition this to a new complementary barrier infrared photodetector (CBIRD) with a similar long wave cut-off and increased sensitivity. ECOSTRESS is a push-whisk Mercury Cadmium Telluride (MCT) based high speed, multi-band, imager which will eventually observe and characterize plant/vegetation functionality and stress index from the International Space Station (ISS) across the contiguous United States (CONUS). MCS/DIVINER utilizes thermopile technology to capture the thermal emission from the polar caps and shadow regions of the moon. Each sensor utilizes specific JPL technology to capture unique science.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127082351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Review of an assortment of IR materials-devices technologies used for imaging in spectral bands ranging from the visible to very long wavelengths 回顾各种红外材料-用于从可见光到超长波长的光谱波段成像的设备技术

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2230550

R. Dewames

{"title":"Review of an assortment of IR materials-devices technologies used for imaging in spectral bands ranging from the visible to very long wavelengths","authors":"R. Dewames","doi":"10.1117/12.2230550","DOIUrl":"https://doi.org/10.1117/12.2230550","url":null,"abstract":"In this paper we review the intrinsic and extrinsic technological properties of the incumbent technology, InP/In0.53Ga0.47As/InP, for imaging in the visible- short wavelength spectral band, InSb and HgCdTe for imaging in the mid-wavelength spectral band and HgCdTe for imaging in the long wavelength spectral band. These material systems are in use for a wide range of applications addressing compelling needs in night vision imaging, low light level astronomical applications and defense strategic satellite sensing. These materials systems are direct band gap energy semiconductors hence the internal quantum efficiency η, is near unity over a wide spectral band pass. A key system figure of merit of a shot noise limited detector technology is given by the equation (1+Jdark. /Jphoton), where Jdark is the dark current density and Jphoton ~qηΦ is the photocurrent density; Φ is the photon flux incident on the detector and q is the electronic charge. The capability to maintain this factor for a specific spectral band close to unity for low illumination conditions and low temperature onset of non-ideal dark current components, basically intrinsic diffusion limited performance all the way, is a marker of quality and versatility of a semiconductor detector technology. It also enables the highest temperature of operation for tactical illumination conditions. A purpose of the work reported in this paper is to explore the focal plane array data sets of photodiode detector technologies widely used to bench mark their fundamental and technology properties and identify paths for improvements.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128197676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2