{"title":"InGaAs/GaAsSb超晶格短波红外探测器","authors":"Chuan Jin, Qingqing Xu, Chengzhang Yu, Jianxin Chen","doi":"10.1117/12.2229020","DOIUrl":null,"url":null,"abstract":"In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39”. Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice\",\"authors\":\"Chuan Jin, Qingqing Xu, Chengzhang Yu, Jianxin Chen\",\"doi\":\"10.1117/12.2229020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39”. Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed.\",\"PeriodicalId\":222501,\"journal\":{\"name\":\"SPIE Defense + Security\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE Defense + Security\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2229020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Defense + Security","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2229020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice
In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39”. Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed.
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