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Further developments of 8μm pitch MCT pixels at Finmeccanica (formerly Selex ES) Finmeccanica(原Selex ES) 8μm间距MCT像素的进一步开发
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223019
D. Jeckells, R. McEwen, S. Bains, Martin Herbert
{"title":"Further developments of 8μm pitch MCT pixels at Finmeccanica (formerly Selex ES)","authors":"D. Jeckells, R. McEwen, S. Bains, Martin Herbert","doi":"10.1117/12.2223019","DOIUrl":"https://doi.org/10.1117/12.2223019","url":null,"abstract":"Finmeccanica (formerly Selex ES) introduced high performance mercury cadmium telluride (MCT) infrared detectors on an 8μm pitch in 2015 with their SuperHawk device which builds on standard production processes already used for the manufacture of 24μm, 20μm, 16μm and 12μm pitch devices. The flexibility of the proprietary Finmeccanica designed diode structure, used in conjunction with the mature production Metal Organic Vapour Phase Epitaxy (MOVPE) MCT growth process at Finmeccanica, enables fine control of diode electrical and optical structure including free choice of cut-off wavelength. The mesa pixel design inherently provides major system performance benefits by reducing blurring mechanisms, including optical scattering, inter-pixel cross-talk and carrier diffusion, to negligible levels. The SuperHawk detector has demonstrated unrivalled MTF and NETD performance, even when operating at temperatures in excess of 120K. The SuperHawk Integrated Detector Cooler Assembly (IDCA) benefits from recent dewar developments at Finmeccanica, which have improved thermal efficiencies while maintaining mechanical integrity over a wide range of applications, enabling use of smaller cryo-coolers to reduce system SWAP-C. Performance and qualification results are presented together with example imagery. SuperHawk provides an easy high resolution upgrade for systems currently based on standard definition 16μm and 15μm infrared detector formats. The paper also addresses further work to increase the operating temperature of the established 8μm process, exploiting High Operating Temperature (HOT) MCT at Finmeccanica, as well as options for LWIR variants of the SuperHawk device.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127871448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Enabling on-axis InSb crystal growth for high-volume wafer production: characterizing and eliminating variation in electrical performance for IR focal plane array applications 实现轴上InSb晶体生长,用于大批量晶圆生产:表征和消除红外焦平面阵列应用的电气性能变化
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223956
Jason L. Merrell, Nathan W. Gray, J. Bolke, A. N. Merrell, A. Prax, Jonathan Demke, Nikolas W. Gossett
{"title":"Enabling on-axis InSb crystal growth for high-volume wafer production: characterizing and eliminating variation in electrical performance for IR focal plane array applications","authors":"Jason L. Merrell, Nathan W. Gray, J. Bolke, A. N. Merrell, A. Prax, Jonathan Demke, Nikolas W. Gossett","doi":"10.1117/12.2223956","DOIUrl":"https://doi.org/10.1117/12.2223956","url":null,"abstract":"InSb focal plane array (FPA) detectors are key components in IR imaging systems that significantly impact both cost and performance. Detector performance is affected by the electronic and crystallographic quality and uniformity of the semiconductor substrate. High-volume, high-yield production of InSb wafers to the standards required for FPA device manufacture requires growth of on-axis {111} crystals. An inherent source of variation hindering on-axis Czochralski crystal growth is anisotropic dopant incorporation. We report on newly developed growth methods that eliminate the negative effects of anisotropic dopant incorporation enabling high volume manufacturing of {111}-oriented substrates and discuss the consequential manufacturing benefits. We also report on a characterization technique to characterize microscale dopant variation across the wafer.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130277699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Development of 10μm pitch XBn detector for low SWaP MWIR applications 用于低SWaP MWIR应用的10μm间距XBn探测器的开发
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2220395
L. Shkedy, M. Brumer, P. Klipstein, M. Nitzani, E. Avnon, Y. Kodriano, I. Lukomsky, I. Shtrichman
{"title":"Development of 10μm pitch XBn detector for low SWaP MWIR applications","authors":"L. Shkedy, M. Brumer, P. Klipstein, M. Nitzani, E. Avnon, Y. Kodriano, I. Lukomsky, I. Shtrichman","doi":"10.1117/12.2220395","DOIUrl":"https://doi.org/10.1117/12.2220395","url":null,"abstract":"Shrinking the pixel size in advanced infrared Focal Plane Array (FPA) detectors allows either a reduction in the system size for the same number of pixels, or an increase in the pixel count for the same focal plane area. Smaller pitch and increased pixel count enables new applications such as long range surveillance, advanced Search and Track, missile warning, persistent surveillance, and infrared spectroscopy. In the last two decades SCD has followed this path of reducing the pixel size in InSb detectors for Mid-Wave Infrared (MWIR) applications, developing and manufacturing FPAs from 30μm down to 10μm pitch. The Blackbird InSb detector with 1920×1536/10μm format was introduced in 2013. Modern electro-optical systems are also designed towards a more compact, low power, and lower cost solution compared with traditional systems. In order to meet these requirements, detectors are being developed to work at Higher Operating Temperatures (HOT). In the last few years SCD has introduced 15μm pitch MWIR detectors based on the novel XBn-InAsSb technology, which enables outstanding electro-optical performance at temperatures as high as 150K. Two XBn FPA formats were developed and are now in production: 640×512/15μm and 1280×1024/15μm. Following the above trends, SCD is currently developing a 10μm XBn pixel, designed to operate at 150K with performance similar to the mature 15μm pixel. In this paper we present results from XBn FPA test devices, where the XBn array is flip-chip bonded to a Readout Integrated Circuit (ROIC) with a 10μm pitch. Test measurements in a laboratory Dewar at 150K demonstrate dark currents of 250fA, quantum efficiency greater than 70%, pixel operability of higher than 99.5%, and excellent array uniformity.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133893435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Long wavelength resonator-QWIPs 长波谐振器- qwip
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224313
K. Choi, S. Allen, Y. Wei, J. Sun, K. Olver, R. Fu
{"title":"Long wavelength resonator-QWIPs","authors":"K. Choi, S. Allen, Y. Wei, J. Sun, K. Olver, R. Fu","doi":"10.1117/12.2224313","DOIUrl":"https://doi.org/10.1117/12.2224313","url":null,"abstract":"We are developing resonator-QWIPs for long wavelength applications. Detector pixels with 25 μm pitch were hybridized to fanout circuits for radiometric measurements. With a moderate doping of 0.5 x 1018 cm-3, we achieved a quantum efficiency of 37% and conversion efficiency of 15% in a 1.3 μm-thick active material and 35% QE and 21% CE in a 0.6 μm-thick active material. Both detectors are cutoff at 10.5 μm with a 2 μm bandwidth. The temperature at which photocurrent equals dark current is about 65 K under F/2 optics. The thicker detector shows a large QE polarity asymmetry due to nonlinear potential drop in the QWIP material layers.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123302175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection 用于高性能长波红外探测的InAs/InAs1-xSbx ii型超晶格
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2228306
M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi
{"title":"InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection","authors":"M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi","doi":"10.1117/12.2228306","DOIUrl":"https://doi.org/10.1117/12.2228306","url":null,"abstract":"We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2 , respectively, under -90 mV applied bias voltage.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129017149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Crosstalk study of near infrared InGaAs detectors 近红外InGaAs探测器的串扰研究
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222736
Xue Li, Hengjing Tang, Tao Li, Cui Fan, X. Shao, Jianwei Li, Jun Wei, H. Gong
{"title":"Crosstalk study of near infrared InGaAs detectors","authors":"Xue Li, Hengjing Tang, Tao Li, Cui Fan, X. Shao, Jianwei Li, Jun Wei, H. Gong","doi":"10.1117/12.2222736","DOIUrl":"https://doi.org/10.1117/12.2222736","url":null,"abstract":"Crosstalk characteristics of high density FPA detectors attract widespread attention in the application of electro-optical systems. Crosstalk characteristics of near-infrared (NIR) InGaAs photodiodes and focal plane arrays (FPAs) were studied in this paper. The mesa type detector was investigated by using laser beam induced current technique (LBIC) to measure the absorption outside the designed photosensitive area, and the results show that the excess absorption enlarges the crosstalk of the adjacent pixels. The structure optimization using the effective absorption layer between the pixels can effectively reduce the crosstalk to 2.5%. The major crosstalk components of the optimization photodiode come from the electronic signal caused by carrier lateral diffusion. For the planar type detectors, test structures were used to compare the crosstalk of different structures, and the guard ring structure shows good suppression of the crosstalk. Then the back-illuminated 32x32 InGaAs photodiodes with 30μm pitch were designed, and LBIC was used to measure its lateral diffusion of the effective carriers and fill factor of photosensitive area. The results indicate that the fill factor of detectors can reach up to 98% when the diffusion region is optimized, and the minimum response exists between two neighborhood pixels. Based on these crosstalk measurement results and optimizing structure designs, the linear InGaAs photodiodes were designed and thus the InGaAs FPA assembly was fabricated. The assembly shows higher electro-optical performance and good improvement on crosstalk. The assembly was applied in infrared imaging system and modulation transfer function (MTF) of FPA assembly was calculated to be above 0.50. The clear image based on FPA assembly was obtained.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132306081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices 基于ii型InAs/InAs1-xSbx/AlAs1-xSbx超晶格的高性能短波红外探测器
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2228611
M. Razeghi, A. Haddadi, X. Suo, S. Adhikary, P. Dianat, R. Chevallier, A. M. Hoang, A. Dehzangi
{"title":"High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices","authors":"M. Razeghi, A. Haddadi, X. Suo, S. Adhikary, P. Dianat, R. Chevallier, A. M. Hoang, A. Dehzangi","doi":"10.1117/12.2228611","DOIUrl":"https://doi.org/10.1117/12.2228611","url":null,"abstract":"We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs1-xSbx/AlAs1-xSbx on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ~1.8mm. For −50mV applied bias at 300 K the photodetector has dark current density of 9.6x10-5 A/cm2 and RxA of 285 Ω•cm2, and it revealed a detectivity of 6.45x1010 cm•Hz1/2/W. Dark current density reached to 1.3x10-8 A/cm2 at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x1012 cm•Hz1/2/W.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124451950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
High performance type II superlattice focal plane array with 6μm cutoff wavelength 具有6μm截止波长的高性能II型超晶格焦平面阵列
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223634
K. Miura, K. Machinaga, Sundararajan Balasekaran, T. Kawahara, M. Migita, H. Inada, Y. Iguchi, M. Sakai, J. Murooka, H. Katayama, M. Kimata
{"title":"High performance type II superlattice focal plane array with 6μm cutoff wavelength","authors":"K. Miura, K. Machinaga, Sundararajan Balasekaran, T. Kawahara, M. Migita, H. Inada, Y. Iguchi, M. Sakai, J. Murooka, H. Katayama, M. Kimata","doi":"10.1117/12.2223634","DOIUrl":"https://doi.org/10.1117/12.2223634","url":null,"abstract":"The cutoff wavelength of 6μm is preferable for the full usage of the atmospheric window in the mid-wavelength region. An InAs/GaSb type-II superlattice (T2SL) is the only known infrared material that has a theoretically predicted high performance and also the cutoff wavelength can be easily controlled by changing the thickness of InAs and GaSb. In this study, we used a p-i-n structure with InAs/GaSb T2SL absorber and also barrier layers which was grown on a Tedoped GaSb substrate by molecular beam epitaxy. A mesa-type focal plane array (FPA) with 320×256 pixels and 30μm pixel pitch was fabricated. Mesa structures were formed by inductively coupled plasma reactive ion etching with halogen gas mixture. Prior to the deposition of the SiO2 passivation film, N2 plasma treatment was applied for reducing the dark currents. Measured dark current of the sensor was 4x10-7A/cm2 at temperature of 77K and reverse bias of -20mV. The quantum efficiency was 0.35 and the detectivity was 4.1x1012cm/Hz1/2W. The sensor array was hybridized with the commercially available readout integrated circuit using indium bumps. The noise equivalent differential temperature measured with F/2.3 optics was 31mK at 77K. The operability was over 99%. This FPA is suitable for full usage of the atmospheric window in the mid-wavelength region.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133249255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Investigating binocular summation in human vision using complementary fused external noise 利用互补融合外部噪声研究人眼视觉的双目叠加
SPIE Defense + Security Pub Date : 2016-05-19 DOI: 10.1117/12.2224055
Christopher Howell, Jeffrey T. Olson
{"title":"Investigating binocular summation in human vision using complementary fused external noise","authors":"Christopher Howell, Jeffrey T. Olson","doi":"10.1117/12.2224055","DOIUrl":"https://doi.org/10.1117/12.2224055","url":null,"abstract":"The impact noise has on the processing of visual information at various stages within the human visual system (HVS) is still an open research area. To gain additional insight, twelve experiments were administered to human observers using sine wave targets to determine their contrast thresholds. A single frame of additive white Gaussian noise (AWGN) and its complement were used to investigate the effect of noise on the summation of visual information within the HVS. A standard contrast threshold experiment served as the baseline for comparisons. In the standard experiment, a range of sine wave targets are shown to the observers and their ability to detect the targets at varying contrast levels were recorded. The remaining experiments added some form of noise (noise image or its complement) and/or an additional sine wave target separated between one to three octaves to the test target. All of these experiments were tested using either a single monitor for viewing the targets or with a dual monitor presentation method for comparison. In the dual monitor experiments, a ninety degree mirror was used to direct each target to a different eye, allowing for the information to be fused binocularly. The experiments in this study present different approaches for delivering external noise to the HVS, and should allow for an improved understanding regarding how noise enters the HVS and what impact noise has on the processing of visual information.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"60 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124725615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-loss crystalline coatings for the near- and mid-infrared 用于近红外和中红外的低损耗晶体涂层
SPIE Defense + Security Pub Date : 2016-05-19 DOI: 10.1117/12.2234740
G. Cole, Wei Zhang, B. Bjork, D. Follman, P. Heu, C. Deutsch, L. Sonderhouse, C. Franz, A. Alexandrovski, O. Heckl, J. Ye, M. Aspelmeyer
{"title":"Low-loss crystalline coatings for the near- and mid-infrared","authors":"G. Cole, Wei Zhang, B. Bjork, D. Follman, P. Heu, C. Deutsch, L. Sonderhouse, C. Franz, A. Alexandrovski, O. Heckl, J. Ye, M. Aspelmeyer","doi":"10.1117/12.2234740","DOIUrl":"https://doi.org/10.1117/12.2234740","url":null,"abstract":"Substrate-transferred crystalline coatings have recently emerged as a groundbreaking new concept in optical interference coatings. Building upon our initial demonstration of this technology, we have recently realized significant improvements in the limiting optical performance of these novel single-crystal GaAs/AlGaAs multilayers. In the nearinfrared (NIR), for center wavelengths spanning 1064 to 1560 nm, we have reduced the excess optical losses (scatter + absorption) to less than 5 ppm, enabling the realization of a cavity finesse exceeding 300,000 at the telecom-relevant wavelength range near 1550 nm. Moreover, we demonstrate the direct measurement of sub-ppm optical absorption at 1064 nm. Concurrently, we investigate the mid-IR (MIR) properties of these coatings and observe exceptional performance for first attempts in this important wavelength region. Specifically, we verify excess losses at the hundred ppm level for wavelengths of 3300 and 3700 nm. Taken together, our NIR optical losses are now fully competitive with ion beam sputtered films, while our first prototype MIR optics have already reached state-of-the-art performance levels for reflectors covering the important fingerprint region for optical gas sensing. Thus, mirrors fabricated via this technique exhibit the lowest mechanical loss (and thus Brownian noise), the highest thermal conductivity, and, potentially, the widest spectral coverage of any “supermirror” technology, owing to state-of-the art levels of scatter and absorption losses in both the near and mid IR, all in a single material platform. Looking ahead, we see a bright future for crystalline coatings in applications requiring the ultimate levels of optical, thermal, and optomechanical performance.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128959787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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