M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi
{"title":"用于高性能长波红外探测的InAs/InAs1-xSbx ii型超晶格","authors":"M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi","doi":"10.1117/12.2228306","DOIUrl":null,"url":null,"abstract":"We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2 , respectively, under -90 mV applied bias voltage.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection\",\"authors\":\"M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi\",\"doi\":\"10.1117/12.2228306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2 , respectively, under -90 mV applied bias voltage.\",\"PeriodicalId\":222501,\"journal\":{\"name\":\"SPIE Defense + Security\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE Defense + Security\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2228306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Defense + Security","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2228306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2 , respectively, under -90 mV applied bias voltage.