用于高性能长波红外探测的InAs/InAs1-xSbx ii型超晶格

M. Razeghi, A. Haddadi, A. M. Hoang, R. Chevallier, S. Adhikary, A. Dehzangi
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引用次数: 15

摘要

我们报道了在GaSb衬底上生长的InAs/InAs1-xSbx型超晶格基光探测器是一种高性能长波红外nBn器件。该器件具有6 μm厚的吸收区,在7.9 μm处的峰值响应率为4.47 a /W,相当于在负90 mV偏置电压下的量子效率为54%,且未使用增透涂层进行正面照明。在77K时,光电探测器50%截止波长为~10 μm。该设备的探测能力为2.8x1011 cm。√Hz/W, 77 K时,RxA和暗电流密度分别为119 Ω•cm2和4.4 × 10-4 A/cm2,施加-90 mV偏置电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of 4.47 A/W at 7.9 μm, which is corresponding to the quantum efficiency of 54% at a bias voltage of negative 90 mV, where no anti-reflection coating was used for front-side illumination. At 77K, the photodetector’s 50% cut-off wavelength was ~10 μm. The device shows the detectivity of 2.8x1011 cm.√Hz/W at 77 K, where RxA and dark current density were 119 Ω•cm2 and 4.4x10-4 A/cm2 , respectively, under -90 mV applied bias voltage.
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