SPIE Defense + Security最新文献_第9页

Latest achievements on MCT IR detectors for space and science imaging 用于空间和科学成像的MCT红外探测器的最新进展

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2228456

O. Gravrand, J. Rothman, P. Castelein, C. Cervera, N. Baier, C. Lobre, E. de Borniol, J. Zanatta, O. Boulade, V. Moreau, B. Fièque, P. Chorier

{"title":"Latest achievements on MCT IR detectors for space and science imaging","authors":"O. Gravrand, J. Rothman, P. Castelein, C. Cervera, N. Baier, C. Lobre, E. de Borniol, J. Zanatta, O. Boulade, V. Moreau, B. Fièque, P. Chorier","doi":"10.1117/12.2228456","DOIUrl":"https://doi.org/10.1117/12.2228456","url":null,"abstract":"HgCdTe (MCT) is a very versatile material for IR detection. Indeed, the ability to tailor the cutoff frequency as close as possible to the detection needs makes it a perfect candidate for high performance detection in a wide range of applications and spectral ranges. Moreover, the high quality material available today, either by liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) allows for very low dark currents at low temperatures and make it suitable for very low flux detection application such as science imaging. MCT has also demonstrated its robustness to aggressive space environment and faces therefore a large demand for space application such as staring at the outer space for science purposes in which case, the detected photon number is very low This induces very strong constrains onto the detector: low dark current, low noise, low persistence, (very) large focal plane arrays. The MCT diode structure adapted to fulfill those requirements is naturally the p/n photodiode. Following the developments of this technology made at DEFIR and transferred to Sofradir in MWIR and LWIR ranges for tactical applications, our laboratory has consequently investigated its adaptation for ultra-low flux in different spectral bands, in collaboration with the CEA Astrophysics lab. Another alternative for ultra low flux applications in SWIR range, has also been investigated with low excess noise MCT n/p avalanche photodiodes (APD). Those APDs may in some cases open the gate to sub electron noise IR detection.. This paper will review the latest achievements obtained on this matter at DEFIR (CEA-LETI and Sofradir common laboratory) from the short wave (SWIR) band detection for classical astronomical needs, to the long wave (LWIR) band for exoplanet transit spectroscopy, up to the very long waves (VLWIR) band.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132520893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

High temperature operation In1-xAlxSb infrared focal plane 高温工作在1- xalxsb红外焦平面

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222173

Yanqiu Lyu, J. Si, X. Cao, Liang Zhang, Z. Peng, Jiaxin Ding, G. Yao, Xiaolei Zhang, Valeriy Reobrazhenskiy

{"title":"High temperature operation In1-xAlxSb infrared focal plane","authors":"Yanqiu Lyu, J. Si, X. Cao, Liang Zhang, Z. Peng, Jiaxin Ding, G. Yao, Xiaolei Zhang, Valeriy Reobrazhenskiy","doi":"10.1117/12.2222173","DOIUrl":"https://doi.org/10.1117/12.2222173","url":null,"abstract":"A high temperature operation mid-wavelength 128×128 infrared focal plane arrays (FPA) based on low Al component In1-xAlxSb was presented in this work. InAlSb materials were grown on InSb (100) substrates using MBE technology, which was confirmed by XRD and AFM analyses. We have designed and grown two structures with and without barrier. The pixel of the detector had a conventional PIN structure with a size of 50μmx50μm. The device fabrication process consisted of mesa etching, passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC), epoxy backfill, lap and polish. Diode resistance, imaging, NETD and operability results are presented for a progression of structures that reduce the diode leakage current as the temperature is raised above 80K. These include addition of a thin region of InAlSb to reduce p-contact leakage current, and construction of the whole device from InAlSb to reduce thermal generation in the active region of the detector. An increase in temperature to 110K, whilst maintaining full 80K performance, is achieved. The I-V curves were measured at different temperature. Quantum efficiency, pixel operability, non-uniformity, and the mean NETD values of the FPAs were measured at 110K. This gives the prospect of significant benefits for the cooling systems, including, for example, use of argon in Joule-Thomson coolers or an increase in the life and/or decrease in the cost, power consumption and cool-down time of Stirling engines by several tens of percent.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"9819 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129953122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Au/Cr-ZnO-Ni structured metal-insulator-metal diode fabrication using Langmuir-Blodgett technique for infrared sensing 利用Langmuir-Blodgett技术制备Au/Cr-ZnO-Ni结构金属绝缘体-金属二极管用于红外传感

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223836

I. Azad, M. Ram, D. Goswami, E. Stefanakos

{"title":"Au/Cr-ZnO-Ni structured metal-insulator-metal diode fabrication using Langmuir-Blodgett technique for infrared sensing","authors":"I. Azad, M. Ram, D. Goswami, E. Stefanakos","doi":"10.1117/12.2223836","DOIUrl":"https://doi.org/10.1117/12.2223836","url":null,"abstract":"The thin nanolayer film of ZnO was synthesized through Langmuir-Blodgett (LB) organic precursor film. The zinc stearate monolayer was formed at air-water interface using zinc acetate as a subphase. The zinc stearate monolayers were deposited on silicon (Si), glass, and gold (Au)/chromium (Cr) plated Silicon (Si) substrates using LB technique. Later, the zinc stearate multilayers LB films on various substrates were annealed at two different temperatures (300oC and 550oC) for the fabrication of zinc oxide (ZnO) nanolayer film. The zinc stearate monolayers as well zinc oxide (ZnO) nanolayer films were characterized using atomic force microscopy (AFM) and X-ray diffraction techniques. The X-ray diffraction measurement has shown the hexagonal wurtzite structure of the ZnO nanolayer on the substrate. The average surface roughness was estimated to be 1.076 nm using AFM technique. The metal-insulator-metal (MIM) diode structure was realized by sandwiching ZnO nanolayer film between thin layer of Gold (Au)/Chromium (Cr) and Nickel (Ni) on silicon substrates. The electron tunneling conduction mechanism is understood through the current-voltage (I-V) characteristics of MIM diode. The highest measured sensitivity magnitude of 20 in inverse of voltage (V-1) with rectification ratio of nearly 10 at ±400 mV in MIM diode is an indicative of its potential application in infrared sensing applications. However, the thin film of ZnO synthesized using LB film as an insulating layer in metal-insulator-metal diode structure was studied for the first time.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125471149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A PFM based digital pixel with off-pixel residue measurement for 15μm pitch MWIR FPAs 基于PFM的数字像元及15μm间距MWIR fpga的离像元残差测量

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224791

S. Abbasi, A. Shafique, A. Galioğlu, O. Ceylan, M. Yazici, Y. Gurbuz

{"title":"A PFM based digital pixel with off-pixel residue measurement for 15μm pitch MWIR FPAs","authors":"S. Abbasi, A. Shafique, A. Galioğlu, O. Ceylan, M. Yazici, Y. Gurbuz","doi":"10.1117/12.2224791","DOIUrl":"https://doi.org/10.1117/12.2224791","url":null,"abstract":"Digital pixels based on pulse frequency modulation (PFM) employ counting techniques to achieve very high charge handling capability compared to their analog counterparts. Moreover, extended counting methods making use of leftover charge (residue) on the integration capacitor help improve the noise performance of these pixels. However, medium wave infrared (MWIR) focal plane arrays (FPAs) having smaller pixel pitch are constrained in terms of pixel area which makes it difficult to add extended counting circuitry to the pixel. Thus, this paper investigates the performance of digital pixels employing off-pixel residue measurement. A circuit prototype of such a pixel has been designed for 15μm pixel pitch and fabricated in 90nm CMOS. The prototype is composed of a pixel front-end based on a PFM loop. The frontend is a modified version of conventional design providing a means for buffering the signal that needs to be converted to a digital value by an off-pixel ADC. The pixel has an integration phase and a residue measurement phase. Measured integration performance of the pixel has been reported in this paper for various detector currents and integration times.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124756527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

State of the art HOT performances for Sofradir II-VI extrinsic technologies Sofradir II-VI外部技术的最先进的HOT性能

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2229308

L. Rubaldo, A. Brunner, P. Guinedor, R. Taalat, D. Sam-giao, A. Kerlain, L. Dargent, Pere‐Laperne Nicolas, V. Chaffraix, M. Bourqui, Y. Loquet, J. Coussement

{"title":"State of the art HOT performances for Sofradir II-VI extrinsic technologies","authors":"L. Rubaldo, A. Brunner, P. Guinedor, R. Taalat, D. Sam-giao, A. Kerlain, L. Dargent, Pere‐Laperne Nicolas, V. Chaffraix, M. Bourqui, Y. Loquet, J. Coussement","doi":"10.1117/12.2229308","DOIUrl":"https://doi.org/10.1117/12.2229308","url":null,"abstract":"SOFRADIR is the worldwide leader on the cooled IR detector market for high-performance space, military and security applications thanks to a well mastered Mercury Cadmium Telluride (MCT) technology, and recently thanks to the acquisition of III-V technology: InSb, InGaAs, and QWIP quantum detectors. Strong and continuous development efforts are deployed to deliver cutting edge products with improved performances in terms of spatial and thermal resolution, low excess noise and high operability. The actual trend in quantum IR detector development is the design of very small pixel, with high operating temperature. To maintain the detector performances and operability at high temperature, the number of pixels exhibiting extra noise like 1/f and RTS noise must be limited. This paper presents the recent developments achieved in Sofradir in terms of HOT MCT extrinsic p on n technology, blue MW band (cut-off wavelength of 4.2μm at 150K) and extended MW band (cut-off wavelength of 5.3μm at 130K). Comparison between optimized and non-optimized technology will be presented in terms of NETD temperature dependency, MTF, 1/f noise and the corresponding impact on RFPN (Residual Fixe Pattern Noise) and its stability up to 170K will be shown.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124344785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Responsivity improvements for a vanadium oxide microbolometer using subwavelength resonant absorbers 利用亚波长共振吸收器改进氧化钒微热计的响应性

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223954

Evan M. Smith, J. Nath, J. Ginn, R. Peale, D. Shelton

引用次数: 10

Thermal instability of GaSb surface oxide GaSb表面氧化物的热不稳定性

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223583

K. Tsunoda, Y. Matsukura, Ryo Suzuki, M. Aoki

{"title":"Thermal instability of GaSb surface oxide","authors":"K. Tsunoda, Y. Matsukura, Ryo Suzuki, M. Aoki","doi":"10.1117/12.2223583","DOIUrl":"https://doi.org/10.1117/12.2223583","url":null,"abstract":"In the development of InAs/GaSb Type-II superlattice (T2SL) infrared photodetectors, the surface leakage current at the mesa sidewall must be suppressed. To achieve this requirement, both the surface treatment and the passivation layer are key technologies. As a starting point to design these processes, we investigated the GaSb oxide in terms of its growth and thermal stability. We found that the formation of GaSb oxide was very different from those of GaAs. Both Ga and Sb are oxidized at the surface of GaSb. In contrast, only Ga is oxidized and As is barely oxidized in the case of GaAs. Interestingly, the GaSb oxide can be formed even in DI water, which results in a very thick oxide film over 40 nm after 120 minutes. To examine the thermal stability, the GaSb native oxide was annealed in a vacuum and analyzed by XPS and Raman spectroscopy. These analyses suggest that SbOx in the GaSb native oxide will be reduced to metallic Sb above 300°C. To directly evaluate the effect of oxide instability on the device performance, a T2SL p-i-n photodetector was fabricated that has a cutoff wavelength of about 4 μm at 80 K. As a result, the surface leakage component was increased by the post annealing at 325°C. On the basis of these results, it is possible to speculate that a part of GaSb oxide on the sidewall surface will be reduced to metallic Sb, which acts as an origin of additional leakage current path.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132682684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

High performance infrared fast cooled detectors for missile applications 用于导弹的高性能红外快速冷却探测器

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2230431

Y. Reibel, L. Espuno, R. Taalat, A. Sultan, Pierre Cassaigne, Noura Matallah

引用次数: 3

Gibbs free energy assisted passivation layers 吉布斯自由能辅助钝化层

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223389

O. Salihoglu, T. Tansel, M. Hoştut, Y. Ergun, A. Aydinli

{"title":"Gibbs free energy assisted passivation layers","authors":"O. Salihoglu, T. Tansel, M. Hoştut, Y. Ergun, A. Aydinli","doi":"10.1117/12.2223389","DOIUrl":"https://doi.org/10.1117/12.2223389","url":null,"abstract":"Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical reactions that take place at the interface during the process. In particular, removal of surface oxides may be controlled via Gibbs reactivity. We have compared electrical performance of type-II superlattice photodetectors, designed for MWIR operation, passivated by different passivation techniques. We have used ALD deposited Al2O3, HfO2, TiO2, ZnO, PECVD deposited SiO2, Si3N4 and sulphur containing octadecanethiol (ODT) selfassembled monolayers (SAM) passivation layers on InAs/GaSb p-i-n superlattice photodetectors with cutoff wavelength at 5.1 μm. In this work, we have compared the result of different passivation techniques which are done under same conditions, same epitaxial structure and same fabrication processes. We have found that ALD deposited passivation is directly related to the Gibbs free energy of the passivation material. Gibbs free energies of the passivation layer can directly be compared with native surface oxides to check the effectiveness of the passivation layer before the experimental study.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116637432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Measurement results of a 12 μm pixel size microbolometer array based on a novel thermally isolating structure using a 17 μm ROIC 基于17 μm ROIC的新型热隔离结构的12 μm像素微测热计阵列的测量结果

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223608

Kai-Marcel Muckensturm, D. Weiler, F. Hochschulz, C. Busch, T. Geruschke, S. Wall, J. Heß, D. Würfel, R. Lerch, H. Vogt

引用次数: 10