SPIE Defense + Security最新文献_第8页

Design of monocrystalline Si/SiGe multi-quantum well microbolometer detector for infrared imaging systems 红外成像系统中单晶Si/SiGe多量子阱微测热计探测器的设计

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224778

A. Shafique, E. C. Durmaz, B. Çetindoğan, M. Yazici, M. Kaynak, C. Kaynak, Y. Gurbuz

引用次数: 4

Manufacturing of transparent ZnS ceramics by powders sintering 粉末烧结法制备透明ZnS陶瓷

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223087

O. Merdrignac-Conanec, N. Hakmeh, G. Durand, X. Zhang

引用次数: 2

RF switching network: a novel technique for IR sensing 射频交换网络:一种新的红外传感技术

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224353

D. Mechtel, R. B. Jenkins, P. Joyce, C. Nelson

{"title":"RF switching network: a novel technique for IR sensing","authors":"D. Mechtel, R. B. Jenkins, P. Joyce, C. Nelson","doi":"10.1117/12.2224353","DOIUrl":"https://doi.org/10.1117/12.2224353","url":null,"abstract":"Rapid sensing of near infrared (IR) energy on a composite structure would provide information that could mitigate damage to composite structures. This paper describes a novel technique that implements photoconductive sensors in a radio frequency (RF) switching network designed to locate in real time the position and intensity of IR radiation incident on a composite structure. In the implementation described here, photoconductive sensors act as rapid response switches in a two layer RF network embedded in an FR-4 laminate. To detect radiation, phosphorous doped silicon photoconductive sensors are inserted in GHz range RF transmission lines. Photoconductive sensors use semiconductor materials that are optically sensitive at material dependent wavelengths. Incident radiation at the appropriate wavelength produces hole-electron pairs, so that the semiconductor becomes a conductor. By permitting signal propagation only when a sensor is illuminated, the RF signals are selectively routed from the lower layer transmission lines to the upper layer lines, thereby pinpointing the location and strength of incident radiation on a structure. Simulations based on a high frequency 3D planar electromagnetics model are presented and compared to experimental results. Experimental results are described for GHz range RF signal control for 300 mW and 180 mW incident energy from 975 nm and 1060 nm wavelength lasers respectively, where upon illumination, RF transmission line signal output power doubled when compared to non-illuminated results. Experimental results are reported for 100 W incident energy from a 1060 nm laser. Test results illustrate that real-time signal processing would permit a structure or vehicle to be controlled in response to incident radiation","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126068412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Calibration of spectral responsivity of IR detectors in the range from 0.6 μm to 24 μm 红外探测器光谱响应度的标定范围为0.6 μm ~ 24 μm

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2228384

V. Podobedov, G. Eppeldauer, L. Hanssen, T. Larason

{"title":"Calibration of spectral responsivity of IR detectors in the range from 0.6 μm to 24 μm","authors":"V. Podobedov, G. Eppeldauer, L. Hanssen, T. Larason","doi":"10.1117/12.2228384","DOIUrl":"https://doi.org/10.1117/12.2228384","url":null,"abstract":"We report the upgraded performance of the National Institute of Standards and Technology (NIST) facility for spectral responsivity calibrations of infrared (IR) detectors in both radiant power and irradiance measurement modes. The extension of the wavelength range of the previous scale, below 0.8 μm and above 19 μm in radiant power mode as well as above 5.3 μm in irradiance mode, became available as a result of multiple improvements. The calibration facility was optimized for low-level radiant flux. A significantly reduced noise-equivalent-power and a relatively constant spectral response were achieved recently on newly developed pyroelectric detectors. Also, an efficient optical geometry was developed for calibration of the spectral irradiance responsivity without using an integrating sphere. Simultaneously, the upgrade and maintenance of the NIST transfer standards, with an extended spectral range, were supported by spectral reflectance measurements of a transfer standard pyroelectric detector using a custom integrating sphere and a Fourier transform spectrometer. The sphere reflectance measurements performed in a relative mode were compared to a bare gold-coated mirror reference, separately calibrated at the Fourier transform Infrared Spectrophotometry facility to 18 μm. Currently, the reflectance data for the pyroelectric standard, available in the range up to 30 μm, are supporting the absolute power responsivity scale by the propagation of the reflectance curve to the absolute tie-spectrum in the overlapping range. Typical examples of working standard pyroelectric-, Si-, MCT-, InSb- and InGaAs- detectors are presented and their optimal use for scale dissemination is analyzed.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125773271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Type II superlattice technology for LWIR detectors LWIR探测器的II型超晶格技术

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222776

P. Klipstein, E. Avnon, D. Azulai, Y. Benny, R. Fraenkel, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, M. Nitzani, I. Shtrichman, N. Rappaport, N. Snapi, E. Weiss, A. Tuito

{"title":"Type II superlattice technology for LWIR detectors","authors":"P. Klipstein, E. Avnon, D. Azulai, Y. Benny, R. Fraenkel, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, M. Nitzani, I. Shtrichman, N. Rappaport, N. Snapi, E. Weiss, A. Tuito","doi":"10.1117/12.2222776","DOIUrl":"https://doi.org/10.1117/12.2222776","url":null,"abstract":"SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD’s new 15 μm pitch “Pelican-D LW” type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD’s MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116649278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 42

High-temperature turn-on behavior of an nBn infrared detector nBn红外探测器的高温导通行为

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2230907

D. Ting, A. Soibel, L. Höglund, C. Hill, S. Keo, A. Fisher, A. Khoshakhlagh, S. Gunapala

引用次数: 0

Small pixel pitch MCT IR-modules 小像素间距MCT红外模块

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223841

H. Lutz, R. Breiter, D. Eich, H. Figgemeier, P. Fries, S. Rutzinger, J. Wendler

{"title":"Small pixel pitch MCT IR-modules","authors":"H. Lutz, R. Breiter, D. Eich, H. Figgemeier, P. Fries, S. Rutzinger, J. Wendler","doi":"10.1117/12.2223841","DOIUrl":"https://doi.org/10.1117/12.2223841","url":null,"abstract":"It is only some years ago, since VGA format detectors in 15μm pitch, manufactured with AIM’s MCT n-on-p LPE standard technology, have been introduced to replace TV/4 format detector arrays as a system upgrade. In recent years a rapid increase in the demand for higher resolution, while preserving high thermal resolution, compactness and low power budget is observed. To satisfy these needs AIM has realized first prototypes of MWIR XGA format (1024x768) detector arrays in 10μm pitch. They fit in the same compact dewar as 640x512, 15μm pitch detector arrays. Therefore, they are best suited for system upgrade purposes to benefit from higher spatial resolution and keep cost on system level low. By combining pitch size reduction with recent development progress in the fields of miniature cryocoolers, short dewars and high operating temperatures the way ahead to ultra-compact high performance MWIR-modules is prepared. For cost reduction MBE grown MCT on commercially available GaAs substrates is introduced at AIM. Recently, 640x512, 15μm pitch FPAs, grown with MBE have successfully passed long-term high temperature storage tests as a crucial step towards serial production readiness level for use in future products. Pitch size reduction is not limited to arrays sensitive in the MWIR, but is of great interest for high performance LWIR or 3rd Gen solutions. Some applications such as rotorcraft pilotage require superior spatial resolution in a compact design to master severe weather conditions or degraded visual environment such as brown-out. For these applications AIM is developing both LWIR as well as dual band detector arrays in HD-format (1280x720) with 12μm pitch. This paper will present latest results in the development of detector arrays with small pitch sizes of 10μm and 12μm at AIM, together with their usage to realize compact cooled IR-modules.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114206525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications 用于红外成像应用的外延制备碲化镉锌衬底的体生长和表面表征

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2225796

J. P. Flint, B. Martinez, T. Betz, J. Mackenzie, F. Kumar, G. Bindley

{"title":"Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications","authors":"J. P. Flint, B. Martinez, T. Betz, J. Mackenzie, F. Kumar, G. Bindley","doi":"10.1117/12.2225796","DOIUrl":"https://doi.org/10.1117/12.2225796","url":null,"abstract":"Cadmium Zinc Telluride (CZT) is an important compound semiconductor material upon which Mercury Cadmium Telluride (MCT) layers are deposited epitaxially to form structures that are used in high performance detectors covering a wide infrared (IR) spectral band. The epitaxial growth of high quality MCT layers presents many technical challenges and a critical determinant of material performance is the quality of the underlying bulk CZT substrate. CZT itself is a difficult material to manufacture where traditional methods of bulk growth are complex and low yielding, which constrains the supply of commercially available substrates. In this work we report on the epitaxy-ready finishing of Travelling Heather Method (THM) grown Cd0.96Zn0.04Te substrates. The THM method is well established for the growth of high quality CZT crystals used in nuclear, X-ray and spectroscopic imaging applications and in this work we demonstrate the application of this technique to the growth of IR specification CZT substrates with areas of up to 5 cm x 5 cm square. We will discuss the advantages of the THM method over alternative methods of bulk CZT growth where the high yield and material uniformity advantages of this technique will be demonstrated. Chemo-mechanical polishing (CMP) of 4 cm x 4 cm CZT substrates reveals that III-V (InSb/GaSb) like levels of epitaxy-ready surface finishing may be obtained with modified process chemistries. Surface quality assessments will be made by various surface analytical and microscopy techniques from which the suitability of the material for subsequent assessment of quality by epitaxial growth will be ascertained.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131802934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The Miniaturized Infrared Detector of Atmospheric Species (MIDAS) a low-mass, MWIR low-power hyperspectral imager 小型大气红外探测器(MIDAS)是一种低质量、MWIR低功率高光谱成像仪

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224355

C. Honniball, R. Wright, P. Lucey, S. Crites

引用次数: 3

State of the art of AIM LWIR and VLWIR MCT 2D focal plane detector arrays for higher operating temperatures AIM LWIR和VLWIR MCT二维焦平面探测器阵列的最新技术，用于更高的工作温度

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223001

H. Figgemeier, S. Hanna, D. Eich, K. Mahlein, W. Fick, W. Schirmacher, R. Thöt

引用次数: 3