P. Klipstein, E. Avnon, D. Azulai, Y. Benny, R. Fraenkel, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, M. Nitzani, I. Shtrichman, N. Rappaport, N. Snapi, E. Weiss, A. Tuito
{"title":"Type II superlattice technology for LWIR detectors","authors":"P. Klipstein, E. Avnon, D. Azulai, Y. Benny, R. Fraenkel, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, M. Nitzani, I. Shtrichman, N. Rappaport, N. Snapi, E. Weiss, A. Tuito","doi":"10.1117/12.2222776","DOIUrl":null,"url":null,"abstract":"SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD’s new 15 μm pitch “Pelican-D LW” type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD’s MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Defense + Security","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2222776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42
Abstract
SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD’s new 15 μm pitch “Pelican-D LW” type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD’s MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.
SCD开发了一系列基于在GaSb上生长的III-V型半导体异质结构的先进红外探测器。XBn/XBp系列势垒探测器可实现扩散受限暗电流,可与MCT Rule-07相媲美,并且具有高量子效率。这项工作描述了SCD新型15 μm间距“鹈鹕- d LW”II型超晶格(T2SL) XBp阵列探测器所克服的一些技术挑战,以及最终实现的最终性能。该探测器是SCD在LWIR光谱范围内工作的高性能二维阵列系列中的第一个,其截止波长为~9.3微米,格式为640 x 512像素。它包含InAs/GaSb和InAs/AlSb T2SLs,使用能带和光响应的k•p模型进行设计。晶圆通过分子束外延生长,并使用标准的焦平面阵列(FPA)工艺制作成焦平面阵列(FPA)探测器,包括湿法和干法蚀刻,铟凹凸杂交,下填充和背面抛光。FPA的量子效率接近50%,工作在77k和F/2.7下,背景性能有限。FPA的像素可操作性在99%以上,剩余不均匀性(RNU)稳定在动态范围的0.04%以上。FPA采用了一种新的数字读出集成电路(ROIC),整个探测器的接口与SCD的MWIR鹈鹕- d探测器密切相关。Pelican- D LW探测器目前处于鉴定和生产的最后阶段,首批原型机已经集成到新的光电系统中。