Au/Cr-ZnO-Ni structured metal-insulator-metal diode fabrication using Langmuir-Blodgett technique for infrared sensing

I. Azad, M. Ram, D. Goswami, E. Stefanakos
{"title":"Au/Cr-ZnO-Ni structured metal-insulator-metal diode fabrication using Langmuir-Blodgett technique for infrared sensing","authors":"I. Azad, M. Ram, D. Goswami, E. Stefanakos","doi":"10.1117/12.2223836","DOIUrl":null,"url":null,"abstract":"The thin nanolayer film of ZnO was synthesized through Langmuir-Blodgett (LB) organic precursor film. The zinc stearate monolayer was formed at air-water interface using zinc acetate as a subphase. The zinc stearate monolayers were deposited on silicon (Si), glass, and gold (Au)/chromium (Cr) plated Silicon (Si) substrates using LB technique. Later, the zinc stearate multilayers LB films on various substrates were annealed at two different temperatures (300oC and 550oC) for the fabrication of zinc oxide (ZnO) nanolayer film. The zinc stearate monolayers as well zinc oxide (ZnO) nanolayer films were characterized using atomic force microscopy (AFM) and X-ray diffraction techniques. The X-ray diffraction measurement has shown the hexagonal wurtzite structure of the ZnO nanolayer on the substrate. The average surface roughness was estimated to be 1.076 nm using AFM technique. The metal-insulator-metal (MIM) diode structure was realized by sandwiching ZnO nanolayer film between thin layer of Gold (Au)/Chromium (Cr) and Nickel (Ni) on silicon substrates. The electron tunneling conduction mechanism is understood through the current-voltage (I-V) characteristics of MIM diode. The highest measured sensitivity magnitude of 20 in inverse of voltage (V-1) with rectification ratio of nearly 10 at ±400 mV in MIM diode is an indicative of its potential application in infrared sensing applications. However, the thin film of ZnO synthesized using LB film as an insulating layer in metal-insulator-metal diode structure was studied for the first time.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Defense + Security","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2223836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The thin nanolayer film of ZnO was synthesized through Langmuir-Blodgett (LB) organic precursor film. The zinc stearate monolayer was formed at air-water interface using zinc acetate as a subphase. The zinc stearate monolayers were deposited on silicon (Si), glass, and gold (Au)/chromium (Cr) plated Silicon (Si) substrates using LB technique. Later, the zinc stearate multilayers LB films on various substrates were annealed at two different temperatures (300oC and 550oC) for the fabrication of zinc oxide (ZnO) nanolayer film. The zinc stearate monolayers as well zinc oxide (ZnO) nanolayer films were characterized using atomic force microscopy (AFM) and X-ray diffraction techniques. The X-ray diffraction measurement has shown the hexagonal wurtzite structure of the ZnO nanolayer on the substrate. The average surface roughness was estimated to be 1.076 nm using AFM technique. The metal-insulator-metal (MIM) diode structure was realized by sandwiching ZnO nanolayer film between thin layer of Gold (Au)/Chromium (Cr) and Nickel (Ni) on silicon substrates. The electron tunneling conduction mechanism is understood through the current-voltage (I-V) characteristics of MIM diode. The highest measured sensitivity magnitude of 20 in inverse of voltage (V-1) with rectification ratio of nearly 10 at ±400 mV in MIM diode is an indicative of its potential application in infrared sensing applications. However, the thin film of ZnO synthesized using LB film as an insulating layer in metal-insulator-metal diode structure was studied for the first time.
利用Langmuir-Blodgett技术制备Au/Cr-ZnO-Ni结构金属绝缘体-金属二极管用于红外传感
采用Langmuir-Blodgett (LB)有机前驱膜制备ZnO纳米薄膜。以乙酸锌为亚相,在空气-水界面形成硬脂酸锌单层。采用LB技术将硬脂酸锌单层沉积在硅(Si)、玻璃和镀金(Au)/铬(Cr)的硅(Si)衬底上。然后,将硬脂酸锌多层LB膜在300℃和550℃两种不同温度下退火,制备氧化锌纳米膜。采用原子力显微镜(AFM)和x射线衍射技术对硬脂酸锌单层和氧化锌(ZnO)纳米膜进行了表征。x射线衍射测量显示ZnO纳米层在衬底上呈六角形纤锌矿结构。利用原子力显微镜技术估计其平均表面粗糙度为1.076 nm。将ZnO纳米薄膜夹在硅衬底上的金(Au)/铬(Cr)和镍(Ni)薄层之间,实现了金属-绝缘体-金属(MIM)二极管结构。通过对MIM二极管电流-电压特性的分析,了解了电子隧穿传导机理。在±400 mV下,MIM二极管在电压(V-1)的倒数中测量到的最高灵敏度为20,整流比接近10,表明其在红外传感应用中的潜在应用。然而,利用LB薄膜作为金属-绝缘体-金属二极管结构的绝缘层合成ZnO薄膜的研究尚属首次。
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