基于ii型InAs/InAs1-xSbx/AlAs1-xSbx超晶格的高性能短波红外探测器

SPIE Defense + Security Pub Date : 2016-05-20 DOI:10.1117/12.2228611

M. Razeghi, A. Haddadi, X. Suo, S. Adhikary, P. Dianat, R. Chevallier, A. M. Hoang, A. Dehzangi

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引用次数: 7

摘要

我们提出了一种高性能短波红外n-i-p光电二极管，其结构基于ii型超晶格，在GaSb衬底上含有InAs/InAs1-xSbx/AlAs1-xSbx。在室温(300K)、正面照明条件下，器件在1.6mm处的峰值响应度为0.47 A/W，对应于零偏压时的量子效率为37%。在300K时，该器件的50%截止波长为~1.8mm。在- 50mV偏置300 K下，探测器的暗电流密度为9.6x10-5 A/cm2, RxA为285 Ω•cm2，探测率为6.45x1010 cm•Hz1/2/W。在200 K下，暗电流密度达到1.3x10-8 A/cm2，量子效率为36%，探测值为5.66x1012 cm•Hz1/2/W。

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High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices

We present a high-performance short-wavelength infrared n-i-p photodiode, whose structure is based on type-II superlattices with InAs/InAs1-xSbx/AlAs1-xSbx on GaSb substrate. At room temperature (300K) with front-side illumination, the device shows the peak responsivity of 0.47 A/W at 1.6mm, corresponding to 37% quantum efficiency at zero bias. At 300K, the device has a 50% cut-off wavelength of ~1.8mm. For −50mV applied bias at 300 K the photodetector has dark current density of 9.6x10-5 A/cm2 and RxA of 285 Ω•cm2, and it revealed a detectivity of 6.45x1010 cm•Hz1/2/W. Dark current density reached to 1.3x10-8 A/cm2 at 200 K, with 36% quantum efficiency which leads to the detectivity value of 5.66x1012 cm•Hz1/2/W.

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SPIE Defense + Security

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