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Recent progress on dark current characterization of very long-wavelength HgCdTe infrared photodetectors and HgCdTe APDs in SITP 甚长波长HgCdTe红外探测器和HgCdTe apd暗电流表征研究进展
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222161
Weida Hu, Jiale He, W. Qiu, Z. Ye, Lu Chen, Chun Lin, Li He, Xiaoshuang Chen, W. Lu
{"title":"Recent progress on dark current characterization of very long-wavelength HgCdTe infrared photodetectors and HgCdTe APDs in SITP","authors":"Weida Hu, Jiale He, W. Qiu, Z. Ye, Lu Chen, Chun Lin, Li He, Xiaoshuang Chen, W. Lu","doi":"10.1117/12.2222161","DOIUrl":"https://doi.org/10.1117/12.2222161","url":null,"abstract":"Detection in the very long wave infrared range (LWIR, 12-15µm) using third-generation infrared focal plane array (FPAs) is essential for remote atmosphere sounding. Indeed, these wavelengths are particularly rich in information about humidity and CO2 levels and provide additional information about cloud structure and temperature profile across the atmosphere. However, the dark current characteristic and associated noise behavior of the HgCdTe photodiode in the wavelength range of 12-15µm, operating at ~77K, are very sensitive to surface passivation techniques as well as to surface material treatments. For current HgCdTe material and device technology, detection of LWIR and VLWIR energy is the subject of current research. Within this range of shrinking band-gaps in detector material, precise control of the quality of the surface passivation and treatment is of great importance. The underlying physics of dark current mechanism is theoretically investigated by using a previously developed simultaneous current extraction approach and numerical simulations. \u0000In addition, HgCdTe electron avalanche photodiodes (e-APD) have been widely used for low-flux and high-speed application. To better understand the dark current transport and electron-avalanche mechanism of the devices and optimize the structures, we perform accurate numerical simulations of the current-voltage characteristics and multiplication factor in planar and mesa homojunction (p-i-n) HgCdTe electron-avalanche photodiodes.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131634713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rapid development of high-volume manufacturing methods for epi-ready GaSb wafers up to 6” diameter for IR imaging applications 用于红外成像应用的直径达6英寸的外延晶片的大批量制造方法的快速发展
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223998
Nathan W. Gray, A. Prax, D. E. Johnson, Jonathan Demke, J. Bolke, W. Alexander
{"title":"Rapid development of high-volume manufacturing methods for epi-ready GaSb wafers up to 6” diameter for IR imaging applications","authors":"Nathan W. Gray, A. Prax, D. E. Johnson, Jonathan Demke, J. Bolke, W. Alexander","doi":"10.1117/12.2223998","DOIUrl":"https://doi.org/10.1117/12.2223998","url":null,"abstract":"We present a new method to produce low-cost, high quality gallium antimonide (GaSb) substrates for IR imaging applications. These methods apply high-volume wafer manufacturing standards from the silicon industry to increase performance and value of our wafers. Encapsulant-free GaSb single crystals were grown using the modified Czochralski method, yielding more than seventy 150mm wafers per crystal or several hundred 75mm or 100mm wafers per crystal. These were processed into epi-ready substrates on which superlattice structures were grown. Wafer and epitaxy structure characterization is also presented, including transmission X-ray topography, dopant level and uniformity.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128831644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature 低温下HgCdTe irfpa探测器的电感耦合等离子体刻蚀
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222825
Y. Chen, Z. Ye, C. Sun, S. Zhang, X. Hu, R. Ding, L. He
{"title":"Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature","authors":"Y. Chen, Z. Ye, C. Sun, S. Zhang, X. Hu, R. Ding, L. He","doi":"10.1117/12.2222825","DOIUrl":"https://doi.org/10.1117/12.2222825","url":null,"abstract":"To fabricate various advanced structures with HgCdTe material, the Inductively Coupled Plasma enhanced Reactive Ion Etching system is indispensable. However, due to low damage threshold and complicated behaviors of mercury in HgCdTe, the lattice damage and induced electrical conversion is very common. According to the diffusion model during etching period, the mercury interstitials, however, may not diffuse deep into the material at cryogenic temperature. In this report, ICP etching of HgCdTe at cryogenic temperature was implemented. The etching system with cryogenic assembly is provided by Oxford Instrument. The sample table was cooled down to 123K with liquid nitrogen. The mask of SiO2 with a contact layer of ZnS functioned well at this temperature. The selectivity and etching velocity maintained the same as reported in the etching of room temperature. Smooth and clean surfaces and profiles were achieved with an optimized recipe.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115693513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Development of dual-band barrier detectors 双频势垒探测器的研制
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2228166
E. Plis, S. Myers, D. Ramirez, S. Krishna
{"title":"Development of dual-band barrier detectors","authors":"E. Plis, S. Myers, D. Ramirez, S. Krishna","doi":"10.1117/12.2228166","DOIUrl":"https://doi.org/10.1117/12.2228166","url":null,"abstract":"We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10.0 μm), and LW/LWIR (cut-off wavelengths are 9 μm and 11.0 μm) detectors with nBn and pBp designs. Recent results include a high performance bias-selectable long/long-wavelength infrared photodetector based on T2SL with a pBp barrier architecture. The two channels 50% cut-off wavelengths were ~ 9.2 μm and ~ 12 μm at 77 K. The “blue” and “red” LWIR absorbers demonstrated saturated QE values of 34 % and 28 %, respectively, measured in a backside illuminated configuration with a ~ 35 μm thick layer of residual GaSb substrate. Bulk-limited dark current levels were ~ 2.6 x 10-7 A/cm2 at + 100 mV and ~ 8.3 x 10-4 A/cm2 at - 200 mV for the “blue” and “red” channels, respectively.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127311707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Implementation of TDI based digital pixel ROIC with 15μm pixel pitch 基于TDI的15μm像素间距数字像素ROIC的实现
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224766
O. Ceylan, A. Shafique, A. Burak, Can Çalışkan, S. Abbasi, M. Yazici, Y. Gurbuz
{"title":"Implementation of TDI based digital pixel ROIC with 15μm pixel pitch","authors":"O. Ceylan, A. Shafique, A. Burak, Can Çalışkan, S. Abbasi, M. Yazici, Y. Gurbuz","doi":"10.1117/12.2224766","DOIUrl":"https://doi.org/10.1117/12.2224766","url":null,"abstract":"A 15um pixel pitch digital pixel for LWIR time delay integration (TDI) applications is implemented which occupies one fourth of pixel area compared to previous digital TDI implementation. TDI is implemented on 8 pixels with oversampling rate of 2. ROIC provides 16 bits output with 8 bits of MSB and 8 bits of LSB. Pixel can store 75 M electrons with a quantization noise of 500 electrons. Digital pixel TDI implementation is advantageous over analog counterparts considering power consumption, chip area and signal-to-noise ratio. Digital pixel TDI ROIC is fabricated with 0.18um CMOS process. In digital pixel TDI implementation photocurrent is integrated on a capacitor in pixel and converted to digital data in pixel. This digital data triggers the summation counters which implements TDI addition. After all pixels in a row contribute, the summed data is divided to the number of TDI pixels(N) to have the actual output which is square root of N improved version of a single pixel output in terms of signal-to-noise-ratio (SNR).","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132480838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors 热红外探测器用HgCdTe薄膜MOCVD生长研究进展
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2229077
A. Kębłowski, W. Gawron, P. Martyniuk, D. Stępień, K. Kolwas, J. Piotrowski, P. Madejczyk, M. Kopytko, A. Piotrowski, A. Rogalski
{"title":"Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors","authors":"A. Kębłowski, W. Gawron, P. Martyniuk, D. Stępień, K. Kolwas, J. Piotrowski, P. Madejczyk, M. Kopytko, A. Piotrowski, A. Rogalski","doi":"10.1117/12.2229077","DOIUrl":"https://doi.org/10.1117/12.2229077","url":null,"abstract":"In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by “Rule 07”.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130843577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Numerical modeling of extended short wave infrared InGaAs focal plane arrays 扩展短波红外InGaAs焦平面阵列的数值模拟
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223442
Andreu L. Glasmann, Hanqing Wen, E. Bellotti
{"title":"Numerical modeling of extended short wave infrared InGaAs focal plane arrays","authors":"Andreu L. Glasmann, Hanqing Wen, E. Bellotti","doi":"10.1117/12.2223442","DOIUrl":"https://doi.org/10.1117/12.2223442","url":null,"abstract":"Indium gallium arsenide (In1−xGaxAs) is an ideal material choice for short wave infrared (SWIR) imaging due to its low dark current and excellent collection efficiency. By increasing the indium composition from 53% to 83%, it is possible to decrease the energy gap from 0.74 eV to 0.47 eV and consequently increase the cutoff wavelength from 1.7 μm to 2.63 μm for extended short wavelength (ESWIR) sensing. In this work, we apply our well-established numerical modeling methodology to the ESWIR InGaAs system to determine the intrinsic performance of pixel detectors. Furthermore, we investigate the effects of different buffer/cap materials. To accomplish this, we have developed composition-dependent models for In1−xGaxAs, In1−xAlxAs, and InAs1−y Py. Using a Green’s function formalism, we calculate the intrinsic recombination coefficients (Auger, radiative) to model the diffusion-limited behavior of the absorbing layer under ideal conditions. Our simulations indicate that, for a given total thickness of the buffer and absorbing layer, structures utilizing a linearly graded small-gap InGaAs buffer will produce two orders of magnitude more dark current than those with a wide gap, such as InAlAs or InAsP. Furthermore, when compared with experimental results for ESWIR photodiodes and arrays, we estimate that there is still a 1.5x magnitude of reduction in dark current before reaching diffusion-limited behavior.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122289773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2D SWIR image sensor with extended wavelength cutoff of 2.5 μm on InP/InGaAs epitaxial wafers with graded buffer layers 在带渐变缓冲层的InP/InGaAs外延片上,波长截止为2.5 μm的2D SWIR图像传感器
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2225109
P. Mushini, Wei Huang, M. Morales, R. Brubaker, Thuc-Uyen Nguyen, Matt Dobies, Wei Zhang, William J. Gustus, G. Mathews, S. Endicter, N. Paik
{"title":"2D SWIR image sensor with extended wavelength cutoff of 2.5 μm on InP/InGaAs epitaxial wafers with graded buffer layers","authors":"P. Mushini, Wei Huang, M. Morales, R. Brubaker, Thuc-Uyen Nguyen, Matt Dobies, Wei Zhang, William J. Gustus, G. Mathews, S. Endicter, N. Paik","doi":"10.1117/12.2225109","DOIUrl":"https://doi.org/10.1117/12.2225109","url":null,"abstract":"Two-dimensional photo detector arrays with a cutoff wavelength of 2.5 μm were fabricated on InP/InGaAs epitaxial wafers with graded buffer layers in a 320x256 geometry on a 12.5μm pitch. Novel growth and fabrication techniques were employed to fabricate these arrays and optimize the performance. The dark current of the detector was investigated for a wide range of temperatures. The fabricated detector array was mated with a ROIC and packaged with a multi-stage TEC and investigated further at the FPA level. The effect of the graded buffer layers on the sensor performance was investigated and the results were compared to other methods used to develop and fabricate 2D image sensors on extended wavelength materials.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123881985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
NIRCA ASIC for the readout of focal plane arrays 用于焦平面阵列读出的NIRCA专用集成电路
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223619
Philip Påhlsson, D. Steenari, Petter Øya, Hans Kristian Otnes Berge, D. Meier, A. Olsen, Amir Hasanbegovic, M. A. Altan, Bahram Najafiuchevler, J. Talebi, S. Azman, C. Gheorghe, Jörg Ackermann, G. Mæhlum, Tor Magnus Johansen, T. Stein
{"title":"NIRCA ASIC for the readout of focal plane arrays","authors":"Philip Påhlsson, D. Steenari, Petter Øya, Hans Kristian Otnes Berge, D. Meier, A. Olsen, Amir Hasanbegovic, M. A. Altan, Bahram Najafiuchevler, J. Talebi, S. Azman, C. Gheorghe, Jörg Ackermann, G. Mæhlum, Tor Magnus Johansen, T. Stein","doi":"10.1117/12.2223619","DOIUrl":"https://doi.org/10.1117/12.2223619","url":null,"abstract":"This work is a continuation of our preliminary tests on NIRCA - the Near Infrared Readout and Controller ASIC [1]. The primary application for NIRCA is future astronomical science and Earth observation missions where NIRCA will be used with mercury cadmium telluride image sensors (HgCdTe, or MCT) [2], [3]. Recently we have completed the ASIC tests in the cryogenic environment down to 77 K. We have verified that NIRCA provides to the readout integrated circuit (ROIC) regulated power, bias voltages, and fully programmable digital sequences with sample control of the analogue to digital converters (ADC). Both analog and digital output from the ROIC can be acquired and image data is 8b/10bencoded and delivered via serial interface. The NIRCA also provides temperature measurement, and monitors several analog and digital input channels. The preliminary work confirms that NIRCA is latch-up immune and able to operate down to 77 K. We have tested the performance of the 12-bit ADC with pre-amplifier to have 10.8 equivalent number of bits (ENOB) at 1.4 Msps and maximum sampling speed at 2 Msps. The 1.8-V and 3.3-V output regulators and the 10-bit DACs show good linearity and work as expected. A programmable sequencer is implemented as a micro-controller with a custom instruction set. Here we describe the special operations of the sequencer with regards to the applications and a novel approach to parallel real-time hardware outputs. The test results of the working prototype ASIC show good functionality and performance from room temperature down to 77 K. The versatility of the chip makes the architecture a possible candidate for other research areas, defense or industrial applications that require analog and digital acquisition, voltage regulation, and digital signal generation.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130196794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SKYWARD: the next generation airborne infrared search and track SKYWARD:下一代机载红外搜索和跟踪
SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2229065
L. Fortunato, G. Colombi, A. Ondini, C. Quaranta, C. Giunti, B. Sozzi, G. Balzarotti
{"title":"SKYWARD: the next generation airborne infrared search and track","authors":"L. Fortunato, G. Colombi, A. Ondini, C. Quaranta, C. Giunti, B. Sozzi, G. Balzarotti","doi":"10.1117/12.2229065","DOIUrl":"https://doi.org/10.1117/12.2229065","url":null,"abstract":"Infrared Search and Track systems are an essential element of the modern and future combat aircrafts. Passive automatic search, detection and tracking functions, are key points for silent operations or jammed tactical scenarios. SKYWARD represents the latest evolution of IRST technology in which high quality electro-optical components, advanced algorithms, efficient hardware and software solutions are harmonically integrated to provide high-end affordable performances. Additionally, the reduction of critical opto-mechanical elements optimises weight and volume and increases the overall reliability. Multiple operative modes dedicated to different situations are available; many options can be selected among multiple or single target tracking, for surveillance or engagement, and imaging, for landing or navigation aid, assuring the maximum system flexibility. The high quality 2D-IR sensor is exploited by multiple parallel processing chains, based on linear and non-linear techniques, to extract the possible targets from background, in different conditions, with false alarm rate control. A widely tested track processor manages a large amount of candidate targets simultaneously and allows discriminating real targets from noise whilst operating with low target to background contrasts. The capability of providing reliable passive range estimation is an additional qualifying element of the system. Particular care has been dedicated to the detector non-uniformities, a possible limiting factor for distant targets detection, as well as to the design of the electro-optics for a harsh airborne environment. The system can be configured for LWIR or MWIR waveband according to the customer operational requirements. An embedded data recorder saves all the necessary images and data for mission debriefing, particularly useful during inflight system integration and tuning.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133648128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
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