SPIE Defense + Security最新文献_第4页

Recent progress on dark current characterization of very long-wavelength HgCdTe infrared photodetectors and HgCdTe APDs in SITP 甚长波长HgCdTe红外探测器和HgCdTe apd暗电流表征研究进展

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222161

Weida Hu, Jiale He, W. Qiu, Z. Ye, Lu Chen, Chun Lin, Li He, Xiaoshuang Chen, W. Lu

{"title":"Recent progress on dark current characterization of very long-wavelength HgCdTe infrared photodetectors and HgCdTe APDs in SITP","authors":"Weida Hu, Jiale He, W. Qiu, Z. Ye, Lu Chen, Chun Lin, Li He, Xiaoshuang Chen, W. Lu","doi":"10.1117/12.2222161","DOIUrl":"https://doi.org/10.1117/12.2222161","url":null,"abstract":"Detection in the very long wave infrared range (LWIR, 12-15µm) using third-generation infrared focal plane array (FPAs) is essential for remote atmosphere sounding. Indeed, these wavelengths are particularly rich in information about humidity and CO2 levels and provide additional information about cloud structure and temperature profile across the atmosphere. However, the dark current characteristic and associated noise behavior of the HgCdTe photodiode in the wavelength range of 12-15µm, operating at ~77K, are very sensitive to surface passivation techniques as well as to surface material treatments. For current HgCdTe material and device technology, detection of LWIR and VLWIR energy is the subject of current research. Within this range of shrinking band-gaps in detector material, precise control of the quality of the surface passivation and treatment is of great importance. The underlying physics of dark current mechanism is theoretically investigated by using a previously developed simultaneous current extraction approach and numerical simulations. \u0000In addition, HgCdTe electron avalanche photodiodes (e-APD) have been widely used for low-flux and high-speed application. To better understand the dark current transport and electron-avalanche mechanism of the devices and optimize the structures, we perform accurate numerical simulations of the current-voltage characteristics and multiplication factor in planar and mesa homojunction (p-i-n) HgCdTe electron-avalanche photodiodes.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131634713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rapid development of high-volume manufacturing methods for epi-ready GaSb wafers up to 6” diameter for IR imaging applications 用于红外成像应用的直径达6英寸的外延晶片的大批量制造方法的快速发展

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223998

Nathan W. Gray, A. Prax, D. E. Johnson, Jonathan Demke, J. Bolke, W. Alexander

引用次数: 1

Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature 低温下HgCdTe irfpa探测器的电感耦合等离子体刻蚀

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222825

Y. Chen, Z. Ye, C. Sun, S. Zhang, X. Hu, R. Ding, L. He

引用次数: 4

Development of dual-band barrier detectors 双频势垒探测器的研制

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2228166

E. Plis, S. Myers, D. Ramirez, S. Krishna

引用次数: 7

Implementation of TDI based digital pixel ROIC with 15μm pixel pitch 基于TDI的15μm像素间距数字像素ROIC的实现

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2224766

O. Ceylan, A. Shafique, A. Burak, Can Çalışkan, S. Abbasi, M. Yazici, Y. Gurbuz

引用次数: 3

Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors 热红外探测器用HgCdTe薄膜MOCVD生长研究进展

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2229077

A. Kębłowski, W. Gawron, P. Martyniuk, D. Stępień, K. Kolwas, J. Piotrowski, P. Madejczyk, M. Kopytko, A. Piotrowski, A. Rogalski

引用次数: 3

Numerical modeling of extended short wave infrared InGaAs focal plane arrays 扩展短波红外InGaAs焦平面阵列的数值模拟

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223442

Andreu L. Glasmann, Hanqing Wen, E. Bellotti

{"title":"Numerical modeling of extended short wave infrared InGaAs focal plane arrays","authors":"Andreu L. Glasmann, Hanqing Wen, E. Bellotti","doi":"10.1117/12.2223442","DOIUrl":"https://doi.org/10.1117/12.2223442","url":null,"abstract":"Indium gallium arsenide (In1−xGaxAs) is an ideal material choice for short wave infrared (SWIR) imaging due to its low dark current and excellent collection efficiency. By increasing the indium composition from 53% to 83%, it is possible to decrease the energy gap from 0.74 eV to 0.47 eV and consequently increase the cutoff wavelength from 1.7 μm to 2.63 μm for extended short wavelength (ESWIR) sensing. In this work, we apply our well-established numerical modeling methodology to the ESWIR InGaAs system to determine the intrinsic performance of pixel detectors. Furthermore, we investigate the effects of different buffer/cap materials. To accomplish this, we have developed composition-dependent models for In1−xGaxAs, In1−xAlxAs, and InAs1−y Py. Using a Green’s function formalism, we calculate the intrinsic recombination coefficients (Auger, radiative) to model the diffusion-limited behavior of the absorbing layer under ideal conditions. Our simulations indicate that, for a given total thickness of the buffer and absorbing layer, structures utilizing a linearly graded small-gap InGaAs buffer will produce two orders of magnitude more dark current than those with a wide gap, such as InAlAs or InAsP. Furthermore, when compared with experimental results for ESWIR photodiodes and arrays, we estimate that there is still a 1.5x magnitude of reduction in dark current before reaching diffusion-limited behavior.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122289773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2D SWIR image sensor with extended wavelength cutoff of 2.5 μm on InP/InGaAs epitaxial wafers with graded buffer layers 在带渐变缓冲层的InP/InGaAs外延片上，波长截止为2.5 μm的2D SWIR图像传感器

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2225109

P. Mushini, Wei Huang, M. Morales, R. Brubaker, Thuc-Uyen Nguyen, Matt Dobies, Wei Zhang, William J. Gustus, G. Mathews, S. Endicter, N. Paik

引用次数: 9

NIRCA ASIC for the readout of focal plane arrays 用于焦平面阵列读出的NIRCA专用集成电路

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223619

Philip Påhlsson, D. Steenari, Petter Øya, Hans Kristian Otnes Berge, D. Meier, A. Olsen, Amir Hasanbegovic, M. A. Altan, Bahram Najafiuchevler, J. Talebi, S. Azman, C. Gheorghe, Jörg Ackermann, G. Mæhlum, Tor Magnus Johansen, T. Stein

{"title":"NIRCA ASIC for the readout of focal plane arrays","authors":"Philip Påhlsson, D. Steenari, Petter Øya, Hans Kristian Otnes Berge, D. Meier, A. Olsen, Amir Hasanbegovic, M. A. Altan, Bahram Najafiuchevler, J. Talebi, S. Azman, C. Gheorghe, Jörg Ackermann, G. Mæhlum, Tor Magnus Johansen, T. Stein","doi":"10.1117/12.2223619","DOIUrl":"https://doi.org/10.1117/12.2223619","url":null,"abstract":"This work is a continuation of our preliminary tests on NIRCA - the Near Infrared Readout and Controller ASIC [1]. The primary application for NIRCA is future astronomical science and Earth observation missions where NIRCA will be used with mercury cadmium telluride image sensors (HgCdTe, or MCT) [2], [3]. Recently we have completed the ASIC tests in the cryogenic environment down to 77 K. We have verified that NIRCA provides to the readout integrated circuit (ROIC) regulated power, bias voltages, and fully programmable digital sequences with sample control of the analogue to digital converters (ADC). Both analog and digital output from the ROIC can be acquired and image data is 8b/10bencoded and delivered via serial interface. The NIRCA also provides temperature measurement, and monitors several analog and digital input channels. The preliminary work confirms that NIRCA is latch-up immune and able to operate down to 77 K. We have tested the performance of the 12-bit ADC with pre-amplifier to have 10.8 equivalent number of bits (ENOB) at 1.4 Msps and maximum sampling speed at 2 Msps. The 1.8-V and 3.3-V output regulators and the 10-bit DACs show good linearity and work as expected. A programmable sequencer is implemented as a micro-controller with a custom instruction set. Here we describe the special operations of the sequencer with regards to the applications and a novel approach to parallel real-time hardware outputs. The test results of the working prototype ASIC show good functionality and performance from room temperature down to 77 K. The versatility of the chip makes the architecture a possible candidate for other research areas, defense or industrial applications that require analog and digital acquisition, voltage regulation, and digital signal generation.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130196794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Bandwidth control of wavelength-selective uncooled infrared sensors using two-dimensional plasmonic absorbers 利用二维等离子体吸收器的波长选择性非冷却红外传感器的带宽控制

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222722

S. Ogawa, D. Fujisawa, M. Kimata

{"title":"Bandwidth control of wavelength-selective uncooled infrared sensors using two-dimensional plasmonic absorbers","authors":"S. Ogawa, D. Fujisawa, M. Kimata","doi":"10.1117/12.2222722","DOIUrl":"https://doi.org/10.1117/12.2222722","url":null,"abstract":"Although standard uncooled infrared (IR) sensors can be used to record information such as the shape, position, and average radiant intensity of objects, these devices cannot capture color (that is, wavelength) data. Achieving wavelength selectivity would pave the way for the development of advanced uncooled IR sensors capable of providing color information as well as multi-color image sensors that would have significant advantages in applications such as fire detection, gas analysis, hazardous material recognition, and biological analysis. We have previously demonstrated an uncooled IR sensor incorporating a two-dimensional plasmonic absorber (2D PLA) that exhibits wavelength selectivity over a wide range in the mid- and long-IR regions. This PLA has a 2D Au-based periodic array of dimples, in which surface plasmon modes are induced and wavelength-selective absorption occurs. However, the dependence of the absorption bandwidth on certain structural parameters has yet to be clarified. The bandwidth of such devices is a vital factor when considering the practical application of these sensors to tasks such as gas detection. In the present study, control of the bandwidth was theoretically investigated using a rigorous coupled wave analysis approach. It is demonstrated that the dimple sidewall structure has a significant impact on the bandwidth and can be used to control both narrow- and broadband absorption. Increasing the sidewall slope was found to decrease the bandwidth due to suppression of cavity-mode resonance in the depth direction of the dimples. These results will contribute to the development of high-resolution, wavelength-selective uncooled IR sensors.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123372182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5