SPIE Defense + Security最新文献_第5页

A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth (100)锑化镓衬底外延抛光表面的制备研究，证明了MBE生长的超低表面缺陷

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2225993

R. Martinez, M. Tybjerg, P. Flint, J. Fastenau, D. Lubyshev, A. Liu, M. J. Furlong

{"title":"A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth","authors":"R. Martinez, M. Tybjerg, P. Flint, J. Fastenau, D. Lubyshev, A. Liu, M. J. Furlong","doi":"10.1117/12.2225993","DOIUrl":"https://doi.org/10.1117/12.2225993","url":null,"abstract":"Gallium Antimonide (GaSb) is an important Group III-V compound semiconductor which is suitable for use in the manufacture of a wide variety of optoelectronic devices such as infra-red (IR) focal plane detectors. A significant issue for the commercialisation of these products is the production of epitaxy ready GaSb, which remains a challenge for the substrate manufacturer, as the stringent demands of the MBE process, requires a high quality starting wafer. In this work large diameter GaSb crystals were grown by the Czochralski (Cz) method and wafers prepared for chemo-mechanical polishing (CMP). Innovative epi-ready treatments and novel post polish cleaning methodologies were applied. The effect of these modified finishing chemistries on substrate surface quality and the performance of epitaxially grown MBE GaSb IR detector structures were investigated. Improvements in the lowering of surface defectivity, maintaining of the surface roughness and optimisation of all flatness parameters is confirmed both pre and post MBE growth. In this paper we also discuss the influence of bulk GaSb quality on substrate surface performance through the characterisation of epitaxial structures grown on near zero etch pit density (EPD) crystals. In summary progression and development of current substrate polishing techniques has been demonstrated to deliver a consistent improved surface on GaSb wafers with a readily desorbed oxide for epitaxial growth.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132428260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bandwidth control of wavelength-selective uncooled infrared sensors using two-dimensional plasmonic absorbers 利用二维等离子体吸收器的波长选择性非冷却红外传感器的带宽控制

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222722

S. Ogawa, D. Fujisawa, M. Kimata

{"title":"Bandwidth control of wavelength-selective uncooled infrared sensors using two-dimensional plasmonic absorbers","authors":"S. Ogawa, D. Fujisawa, M. Kimata","doi":"10.1117/12.2222722","DOIUrl":"https://doi.org/10.1117/12.2222722","url":null,"abstract":"Although standard uncooled infrared (IR) sensors can be used to record information such as the shape, position, and average radiant intensity of objects, these devices cannot capture color (that is, wavelength) data. Achieving wavelength selectivity would pave the way for the development of advanced uncooled IR sensors capable of providing color information as well as multi-color image sensors that would have significant advantages in applications such as fire detection, gas analysis, hazardous material recognition, and biological analysis. We have previously demonstrated an uncooled IR sensor incorporating a two-dimensional plasmonic absorber (2D PLA) that exhibits wavelength selectivity over a wide range in the mid- and long-IR regions. This PLA has a 2D Au-based periodic array of dimples, in which surface plasmon modes are induced and wavelength-selective absorption occurs. However, the dependence of the absorption bandwidth on certain structural parameters has yet to be clarified. The bandwidth of such devices is a vital factor when considering the practical application of these sensors to tasks such as gas detection. In the present study, control of the bandwidth was theoretically investigated using a rigorous coupled wave analysis approach. It is demonstrated that the dimple sidewall structure has a significant impact on the bandwidth and can be used to control both narrow- and broadband absorption. Increasing the sidewall slope was found to decrease the bandwidth due to suppression of cavity-mode resonance in the depth direction of the dimples. These results will contribute to the development of high-resolution, wavelength-selective uncooled IR sensors.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123372182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Graphene on plasmonic metamaterials for infrared detection 石墨烯对等离子体超材料的红外探测

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222735

S. Ogawa, D. Fujisawa, M. Shimatani, K. Matsumoto

{"title":"Graphene on plasmonic metamaterials for infrared detection","authors":"S. Ogawa, D. Fujisawa, M. Shimatani, K. Matsumoto","doi":"10.1117/12.2222735","DOIUrl":"https://doi.org/10.1117/12.2222735","url":null,"abstract":"Graphene consists of a single layer of carbon atoms with a two-dimensional hexagonal lattice structure. Recently, it has been the subject of increasing interest due to its excellent optoelectronic properties and interesting physics. Graphene is considered to be a promising material for use in optoelectronic devices due to its fast response and broadband capabilities. However, graphene absorbs only 2.3% of incident white light, which limits the performance of photodetectors based on it. One promising approach to enhance the optical absorption of graphene is the use of plasmonic resonance. The field of plasmonics has been receiving considerable attention from the viewpoint of both fundamental physics and practical applications, and graphene plasmonics has become one of the most interesting topics in optoelectronics. In the present study, we investigated the optical properties of graphene on a plasmonic metamaterial absorber (PMA). The PMA was based on a metal-insulator-metal structure, in which surface plasmon resonance was induced. The graphene was synthesized by chemical vapor deposition and transferred onto the PMA, and the reflectance of the PMA in the infrared (IR) region, with and without graphene, was compared. The presence of the graphene layer was found to lead to significantly enhanced absorption only at the main plasmon resonance wavelength. The localized plasmonic resonance induced by the PMA enhanced the absorption of graphene, which was attributed to the enhancement of the total absorption of the PMA with graphene. The results obtained in the present study are expected to lead to improvements in the performance of graphene-based IR detectors.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128847200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Geolocating thermal binoculars based on a software defined camera core incorporating HOT MCT grown by MOVPE 基于软件定义相机核心的热成像双筒望远镜定位，该相机核心包含由MOVPE公司开发的HOT MCT

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223952

L. Pillans, J. Harmer, Tim Edwards, L. Richardson

引用次数: 0

Uncooled 10μm FPA development at DRS DRS的非冷却10μm FPA开发

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2229079

G. Skidmore

引用次数: 11

Colloidal quantum dots for low-cost MWIR imaging 用于低成本MWIR成像的胶体量子点

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2234734

A. Ciani, R. Pimpinella, C. Grein, P. Guyot-Sionnest

引用次数: 28

Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology 10μm间距HgCdTe二极管阵列的最新发展从传统技术到外部技术

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2228720

N. Péré-Laperne, J. Berthoz, R. Taalat, L. Rubaldo, A. Kerlain, Emmanuel Carrère, L. Dargent

{"title":"Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology","authors":"N. Péré-Laperne, J. Berthoz, R. Taalat, L. Rubaldo, A. Kerlain, Emmanuel Carrère, L. Dargent","doi":"10.1117/12.2228720","DOIUrl":"https://doi.org/10.1117/12.2228720","url":null,"abstract":"Sofradir recently presented Daphnis, its latest 10 μm pitch product family. Both Daphnis XGA and HD720 are 10μm pitch mid-wave infrared focal plane array. Development of small pixel pitch is opening the way to very compact products with a high spatial resolution. This new product is taking part in the HOT technology competition allowing reductions in size, weight and power of the overall package. This paper presents the recent developments achieved at Sofradir to make the 10μm pitch HgCdTe focal plane array based on the legacy technology. Electrical and electro-optical characterizations are presented to define the appropriate design of 10μm pitch diode array. The technological tradeoffs are explained to lower the dark current, to keep high quantum efficiency with a high operability above 110K, F/4. Also, Sofradir recently achieved outstanding Modulation Transfer Function (MTF) demonstration at this pixel pitch, which clearly demonstrates the benefit to users of adopting 10μm pixel pitch focal plane array based detectors. Furthermore, the HgCdTe technology has demonstrated an increase of the operating temperature, plus 40K, moving from the legacy to the P-on-n one at a 15μm pitch in mid-wave band. The first realizations using the extrinsic P-on-n technology and the characterizations of diodes with a 10μm pitch neighborhood will be presented in both mid-wave and long-wave bands.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115769551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Type-II superlattice infrared detector technology at Fraunhofer IAF 弗劳恩霍夫IAF ii型超晶格红外探测器技术

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2223887

R. Rehm, V. Daumer, T. Hugger, N. Kohn, W. Luppold, R. Müller, J. Niemasz, Johannes Schmidt, F. Rutz, T. Stadelmann, M. Wauro, A. Wörl

{"title":"Type-II superlattice infrared detector technology at Fraunhofer IAF","authors":"R. Rehm, V. Daumer, T. Hugger, N. Kohn, W. Luppold, R. Müller, J. Niemasz, Johannes Schmidt, F. Rutz, T. Stadelmann, M. Wauro, A. Wörl","doi":"10.1117/12.2223887","DOIUrl":"https://doi.org/10.1117/12.2223887","url":null,"abstract":"For more than two decades, Antimony-based type-II superlattice photodetectors for the infrared spectral range between 3-15 μm are under development at the Fraunhofer Institute for Applied Solid State Physics (IAF). Today, Fraunhofer IAF is Germany’s only national foundry for InAs/GaSb type-II superlattice detectors and we cover a wide range of aspects from basic materials research to small series production in this field. We develop single-element photodetectors for sensing systems as well as two-dimensional detector arrays for high-performance imaging and threat warning systems in the mid-wavelength and long-wavelength region of the thermal infrared. We continuously enhance our production capabilities by extending our in-line process control facilities. As a recent example, we present a semiautomatic wafer probe station that has developed into an important tool for electrooptical characterization. A large amount of the basic materials research focuses on the reduction of the dark current by the development of bandgap engineered device designs on the basis of heterojunction concepts. Recently, we have successfully demonstrated Europe’s first LWIR InAs/GaSb type-II superlattice imager with 640x512 pixels with 15 μm pitch. The demonstrator camera already delivers a good image quality and achieves a thermal resolution better than 30 mK.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127314762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

QWIPs at IRnova, a status update IRnova的qwip，状态更新

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2228348

H. Martijn, A. Gamfeldt, C. Asplund, S. Smuk, H. Kataria, E. Costard

引用次数: 16

Design and simulation of multi-color infrared CMOS metamaterial absorbers 多色红外CMOS超材料吸收器的设计与仿真

SPIE Defense + Security Pub Date : 2016-05-20 DOI: 10.1117/12.2222975

Zhengxi Cheng, Yongping Chen, Bin Ma

{"title":"Design and simulation of multi-color infrared CMOS metamaterial absorbers","authors":"Zhengxi Cheng, Yongping Chen, Bin Ma","doi":"10.1117/12.2222975","DOIUrl":"https://doi.org/10.1117/12.2222975","url":null,"abstract":"Metamaterial electromagnetic wave absorbers, which usually can be fabricated in a low weight thin film structure, have a near unity absorptivity in a special waveband, and therefore have been widely applied from microwave to optical waveband. To increase absorptance of CMOS MEMS devices in 2-5 μmm waveband, multi-color infrared metamaterial absorbers are designed with CSMC 0.5 μmm 2P3M and 0.18 μmm 1P6M CMOS technology in this work. Metal-insulator-metal (MIM) three-layer MMAs and Insulator-metal-insulator-metal (MIMI) four-layer MMAs are formed by CMOS metal interconnect layers and inter metal dielectrics layer. To broaden absorption waveband in 2-5μmm range, MMAs with a combination of different sizes cross bars are designed. The top metal layer is a periodic aluminum square array or cross bar array with width ranging from submicron to several microns. The absorption peak position and intensity of MMAs can be tuned by adjusting the top aluminum micro structure array. Post-CMOS process is adopted to fabricate MMAs. The infrared absorption spectra of MMAs are verified with finite element method simulation, and the effects of top metal structure sizes, patterns, and films thickness are also simulated and intensively discussed. The simulation results show that CMOS MEMS MMAs enhance infrared absorption in 2-20 μmm. The MIM broad MMA has an average absorptance of 0.22 in 2-5 μmm waveband, and 0.76 in 8-14 μm waveband. The CMOS metamaterial absorbers can be inherently integrated in many kinds of MEMS devices fabricated with CMOS technology, such as uncooled bolometers, infrared thermal emitters.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"36 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123510329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0