A. Ciani, R. Pimpinella, C. Grein, P. Guyot-Sionnest
{"title":"Colloidal quantum dots for low-cost MWIR imaging","authors":"A. Ciani, R. Pimpinella, C. Grein, P. Guyot-Sionnest","doi":"10.1117/12.2234734","DOIUrl":null,"url":null,"abstract":"Monodisperse suspensions of HgTe colloidal quantum dots (CQD) are readily synthesized with infrared energy gaps between 3 and 12 microns. Infrared photodetection using dried films of these CQDs has been demonstrated up to a wavelength of 12 microns, and HgTe CQD single-elemnet devices with 3.6 micron cutoff have bee nreported nad show ogod absorption <(10^4 cm^-1), response time and detectivity (2*10^10 Jones) at at emperature of 175 K; with the potential fo uncooled imaging. The synthesis of CQDs and fabrication of detector devices employ bench-top chemistry techniques, leading to the potential for rapid, wafer-scale manufacture of MWIR imaging devices with low production costs and overhead. The photoconductive, photovoltaic and optical properties of HgTe CQD films will be discussed relative to infrared imaging, along with recent achievements in integrating CQD films with readout integrated circuits to produce CQD-based MWIR focal plane arrays.","PeriodicalId":222501,"journal":{"name":"SPIE Defense + Security","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Defense + Security","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2234734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
Monodisperse suspensions of HgTe colloidal quantum dots (CQD) are readily synthesized with infrared energy gaps between 3 and 12 microns. Infrared photodetection using dried films of these CQDs has been demonstrated up to a wavelength of 12 microns, and HgTe CQD single-elemnet devices with 3.6 micron cutoff have bee nreported nad show ogod absorption <(10^4 cm^-1), response time and detectivity (2*10^10 Jones) at at emperature of 175 K; with the potential fo uncooled imaging. The synthesis of CQDs and fabrication of detector devices employ bench-top chemistry techniques, leading to the potential for rapid, wafer-scale manufacture of MWIR imaging devices with low production costs and overhead. The photoconductive, photovoltaic and optical properties of HgTe CQD films will be discussed relative to infrared imaging, along with recent achievements in integrating CQD films with readout integrated circuits to produce CQD-based MWIR focal plane arrays.