Colloidal quantum dots for low-cost MWIR imaging

A. Ciani, R. Pimpinella, C. Grein, P. Guyot-Sionnest
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引用次数: 28

Abstract

Monodisperse suspensions of HgTe colloidal quantum dots (CQD) are readily synthesized with infrared energy gaps between 3 and 12 microns. Infrared photodetection using dried films of these CQDs has been demonstrated up to a wavelength of 12 microns, and HgTe CQD single-elemnet devices with 3.6 micron cutoff have bee nreported nad show ogod absorption <(10^4 cm^-1), response time and detectivity (2*10^10 Jones) at at emperature of 175 K; with the potential fo uncooled imaging. The synthesis of CQDs and fabrication of detector devices employ bench-top chemistry techniques, leading to the potential for rapid, wafer-scale manufacture of MWIR imaging devices with low production costs and overhead. The photoconductive, photovoltaic and optical properties of HgTe CQD films will be discussed relative to infrared imaging, along with recent achievements in integrating CQD films with readout integrated circuits to produce CQD-based MWIR focal plane arrays.
用于低成本MWIR成像的胶体量子点
单分散的HgTe胶体量子点(CQD)悬浮液可以很容易地合成,其红外能隙在3 ~ 12微米之间。利用这些CQD的干燥薄膜进行红外光探测已被证明波长可达12微米,并且已经报道了具有3.6微米截止的HgTe CQD单元素器件,并且在175 K温度下显示出良好的吸收<(10^4 cm^-1),响应时间和探测率(2*10^10琼斯);具有非冷却成像的潜力。cqd的合成和探测器器件的制造采用了台式化学技术,这使得快速、晶圆级制造MWIR成像器件具有低生产成本和低开销的潜力。本文将讨论HgTe CQD薄膜的光导、光电和光学特性,以及将CQD薄膜与读出集成电路集成以生产基于CQD的MWIR焦平面阵列的最新成果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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