Advances in Optoelectronics and Micro/nano-optics最新文献_第7页

Scene-based bad pixel dynamic correction and evaluation for IRFPA device 基于场景的红外焦平面成像器件坏像动态校正与评价

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713516

Yang Cao, Weiqi Jin, Chongliang Liu, Xiu Liu

{"title":"Scene-based bad pixel dynamic correction and evaluation for IRFPA device","authors":"Yang Cao, Weiqi Jin, Chongliang Liu, Xiu Liu","doi":"10.1109/AOM.2010.5713516","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713516","url":null,"abstract":"Infrared focal plane array IRFPA bad pixel correction in complex applications and rich details conditions is a common problem. Therefore, a scene-based bad pixel dynamic correction (SBBPDC) technique was investigated. Based on the adaptive median filtering bad pixel detection algorithm, using the key frame technique according to the scene change, the interframe statistics are applied to judging bad pixels for higher detection accuracy. Using the improved Nagao filtering bad pixel compensation algorithm with some stronger directivity filtering sub-windows which have the same pixel amount, the image boundary pixels didn't reappear as flicking dot during the quick scene changes, and the rich scene details were preserved. Three new objective evaluation parameters were proposed: detection missed factor, detection false factor and bad pixel reappearing factor to evaluate the validity and over-correction to details of algorithm. The correction experiment of actual IR images from a cooled medium wave IRFPA proved SBBPDC algorithm effective to solve the details missing and bad pixels reappearing problems existing in traditional bad pixel correction algorithms.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129019533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Study on resonant cavity enhanced photodetector using subwavelength grating 亚波长光栅谐振腔增强光电探测器的研究

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713565

Yufeng Shang, Yongqing Huang, X. Duan, X. Ye, Hui Huang, Shiwei Cai, Qi Wang, X. Ren

引用次数: 0

Thermal resistance analysis of high power light emitting diodes 大功率发光二极管的热阻分析

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713511

W. Guo, Tianping Ding, B. Cui, Fei Yin, Desheng Cui, Weiwei Yan

引用次数: 0

Fabrication of optical photonic crystals by holographic lithography 全息光刻技术制备光学光子晶体

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713587

Lv Hao, W. Xia, W. Tam

引用次数: 0

Fiber length and chromatic dispersion measurement technology using a novel optical frequency domain reflectometry 光纤长度和色散测量技术采用了一种新型的光频域反射法

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713515

Binhao Wang, G. Yan, Chunsheng Yan

引用次数: 2

Piezoelectric acoustic resonant mass sensors 压电声谐振质量传感器

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713583

Hongyuan Zhao, W. Pang, Hao F. Zhang

引用次数: 1

Characteristics of coupled microcircular lasers confined by insulator SiO2 and metal layer with an output waveguide 具有输出波导的绝缘体SiO2和金属层耦合微圆激光器的特性

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713544

Jian-Dong Lin, Yongzhen Huang, Q. Yao, X. Lv, Yuede Yang, J. Xiao, Yun Du

引用次数: 0

Integration of multimode interference device with electroabsorption modulators as simple switches 集成多模干扰装置与电吸收调制器作为简单开关

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713521

S. Lee, H. Yang, Y.C. Li, T. Mei

{"title":"Integration of multimode interference device with electroabsorption modulators as simple switches","authors":"S. Lee, H. Yang, Y.C. Li, T. Mei","doi":"10.1109/AOM.2010.5713521","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713521","url":null,"abstract":"A 1×2 multimode interference device is monolithically integrated to two electroabsorption modulator based switches at the output ports by means of quantum-well intermixing. At the wavelength range of 1550–1570nm, both arms act as separate DC switches which can be modulated with the extinction ratios of up to 10dB. Monolithic integration of active and passive photonic components is attractive due to its miniaturized size which can simultaneously satisfy multifunctional purposes. The potential of compacted optical circuits along with low-cost batch fabrications and high stability ensures the viability of such endeavours. The integration of an MMI device (passive device) with EAMs (active devices) enables it to be used as a compact multiplexer or optical transmitter. The prototype made is of a relatively larger size (∼2000µm) but its size can be potentially reduced to around 500µm or less. The material structure employed is the InGaAlAs/InGaAlAs MQW with dual depletion structure (DDR) and large optical cavity (LOC) structure design. The LOC material structure was designed for the realization of lower insertion loss. The QWI technology utilized here is the impurity-free vacancy diffusion (IFVD) method and it resulted in a 56nm blue-shift in the bandgap structure. The etching process executed here was the dry etching process using inductively coupled plasma (ICP) etching based on a CH4/Cl2/H2 gas combination. The MMI length is 1150µm whereas the modulators are both 500µm long.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124758275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Comparison between radiation forces upon nanoparticles in continuous laser tweezers and in pulsed laser tweezers 连续激光镊子与脉冲激光镊子中纳米粒子辐射力的比较

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713591

Xiaoyu Liu, Feng Wang

引用次数: 0

First-principle study of GaN polar and nonpolar surfaces 氮化镓极性和非极性表面的第一性原理研究

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713530

Hongpeng Zhao, Zhiyou Guo, Huaxiong Zhao, Yu-Fei Zhang

引用次数: 1