氮化镓极性和非极性表面的第一性原理研究

Hongpeng Zhao, Zhiyou Guo, Huaxiong Zhao, Yu-Fei Zhang
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引用次数: 1

摘要

GaN表面的极性可能对其电子结构有很大的影响,因此基于密度泛函理论,采用局域密度近似(LDA)研究了(0001)和(112 * 0)表面及其电子结构,并采用第一性原理研究了混合泛函方法。描述了表面原子位置的变化,分析了表面电子结构。并且出现了明显的弛豫现象,对电场极化方向影响很大,这就是为什么我们的芯片沿(112 * 0)表面生长具有更好的性能。GaN(0001)表面的带隙明显比GaN(112 < 0)表面的带隙窄,导致发光光谱也红移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First-principle study of GaN polar and nonpolar surfaces
The polarity of GaN surface may have a substantial influence on its electronic structure, So the (0001) and (112̄0) surfaces and their electronic structures are studied based on density-functional theory using the local-density approximation (LDA) as well as the hybrid functional approach were studied by First-principles study. It presents the change of surface atoms position and analyses the surface electronic structure. Also the obvious relaxation appears which effects the electric field polarization direction a lot, that is the reason why our chip grown along (112̄0) surface has better property. The band gap of GaN (0001) surface is obviously narrower than that of GaN (112̄0), leading to the luminescence spectra shift red also.
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