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Advances in Optoelectronics and Micro/nano-optics最新文献

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Some methods to make high quality GaN film by MOCVD MOCVD制备高质量GaN膜的几种方法
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713529
Li Guorui, Liang Xiaoyun
{"title":"Some methods to make high quality GaN film by MOCVD","authors":"Li Guorui, Liang Xiaoyun","doi":"10.1109/AOM.2010.5713529","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713529","url":null,"abstract":"Production of GaN films by metal-organic chemical vapor deposition (MOCVD) is widely used way of the world. MOCVD production in China the concept and production equipment still have a gap with the international, so do not have the advantage of international competition. This article describes some results of GaN film grown on sapphire by MOCVD in recent year. author will discuss those results base on the order of process, hope to improve the quality of MOCVD GaN films by improve the process.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130767115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A novel design of triplexer based on Bragg grating assisted MMI coupler 一种基于布拉格光栅辅助MMI耦合器的新型三工器设计
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713572
N. Zhu
{"title":"A novel design of triplexer based on Bragg grating assisted MMI coupler","authors":"N. Zhu","doi":"10.1109/AOM.2010.5713572","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713572","url":null,"abstract":"A novel design of a bi-directional triplexer based on Bragg grating assisted multi-mode interference (MMI) coupler is proposed in this letter. The MMI coupler de/multiplexes the upload 1310nm channel and the download 1490nm channel, while the grating reflects the download 1550nm channel to the other download port. The bandwidths for 1310nm, 1490nm and 1550nm are about 110nm, 50nm, and 15nm, respectively.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126538799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Temporal coupled mode theory in ring-bus-ring configuration 环-母线-环结构的时间耦合模式理论
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713512
Y. Zhang, S. Darmawan, T. Mei, D. H. Zhang
{"title":"Temporal coupled mode theory in ring-bus-ring configuration","authors":"Y. Zhang, S. Darmawan, T. Mei, D. H. Zhang","doi":"10.1109/AOM.2010.5713512","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713512","url":null,"abstract":"We develop the temporal coupled mode theory for the ring-bus-ring device by taking account of the energy-conservation. The presence of the center waveguide in the tri-coupler section of the RBR facilitates the interaction between the two side-coupled rings. The correspondence between the coupled mode theory in time and transfer matrix formalism (TMF) is established. A very good agreement is obtained between the TMF and the 2D finite-difference time-domain simulations (FDTD). Some applications using RBR device such as channel dropping filter and selective power splitter are presented.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115036130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A micro flow sensor for volumetric measurement of conductive fluids 一种用于导电流体体积测量的微流量传感器
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713586
Haixia Yu, Dachao Li, Kexin Xu, R. Roberts, N. Tien
{"title":"A micro flow sensor for volumetric measurement of conductive fluids","authors":"Haixia Yu, Dachao Li, Kexin Xu, R. Roberts, N. Tien","doi":"10.1109/AOM.2010.5713586","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713586","url":null,"abstract":"We present a microfluidic volumetric measurement system for applications involving conductive fluids. The low cost polydimethylsiloxane (PDMS) device consists of an interconnected Venturi Tube to generate vacuum for fluid manipulation, and a resistance based sensor for fluid volume quantification. The Venturi Tube achieves less than 88 kPa (absolute pressure) vacuum when a 256 kPa external pressure is applied. Measurements using the volumetric sensor have been demonstrated with deionized water, and the results correlate well (R2=0.9996) with the micro syringe references. The demonstrated system provides excellent functionality for conductive fluids, such as those used in biomedical applications.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125189477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Backward-wave nonlinear-optical microchip 后向波非线性光学微芯片
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713562
A. Popov
{"title":"Backward-wave nonlinear-optical microchip","authors":"A. Popov","doi":"10.1109/AOM.2010.5713562","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713562","url":null,"abstract":"The possibility of creation of remotely all-optically controlled microchip is described based on coherent nonlinear-optical energy exchange between ordinary and backward electromagnetic waves in negative-index metamaterials.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127439052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inexpensive, flexible and low-resistive fabrics electrodes for flexible devices 用于柔性器件的廉价、柔性和低电阻织物电极
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713601
J. Ng, C. Mak
{"title":"Inexpensive, flexible and low-resistive fabrics electrodes for flexible devices","authors":"J. Ng, C. Mak","doi":"10.1109/AOM.2010.5713601","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713601","url":null,"abstract":"We report the use of conducting polyester fabrics as flexible electrodes for wearable devices. These conducting fabrics have well defined mesh openings, excellent flexibility and are fabricated by high-throughput manufacturing. Surface resistivity is as low as 0.03 ohms/square, which decreases Ohmic losses when scaling up to large area devices.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122349407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature characteristics of the red Resonant Cavity light emitting diodes 红色谐振腔发光二极管的温度特性
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713506
Y. Xuan, Li Jianjun, Chen Rui, Chen Yixin, Zou Deshu, Shen Guangdi
{"title":"Temperature characteristics of the red Resonant Cavity light emitting diodes","authors":"Y. Xuan, Li Jianjun, Chen Rui, Chen Yixin, Zou Deshu, Shen Guangdi","doi":"10.1109/AOM.2010.5713506","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713506","url":null,"abstract":"In this paper, InGaP/AlGaInP 640nm Resonant-Cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved and compared them with 630nm InGaP/AlGaInP red light-emitting diodes which don't include the top and bottom DBRs. We mainly focus on the temperature characteristics of these two kinds of devices as operation temperature increasing. When the operation temperature increases from 10□ to 47.5□, the optical and electrical characteristics variations of RCLEDs at 20mA is changed more subtly. The red shift of RCLEDs is 2nm, while the red LEDs' is 4nm. The light efficiency degrades less severely. According to the experimental results, we confirm that the temperature characteristics of RCLEDs are more insensitive. In order to interpret the temperature dependent experimental results, theoretical analysis is further carried to investigate the physical mechanism.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123586183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED 偏振效应对InGaN/AlGaN MQWs LED发光效率的影响
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713524
Xu Yi, Sun Hui-qing, Xiao Yong-neng, Han Shi-yang, Ke Fu
{"title":"Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED","authors":"Xu Yi, Sun Hui-qing, Xiao Yong-neng, Han Shi-yang, Ke Fu","doi":"10.1109/AOM.2010.5713524","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713524","url":null,"abstract":"polarization effect would form built-in polarization electric filed, leading to the bend of energy band, which influences the radiative recombination rate of the carries. Taking account of the difference of piezoelectric polarization effect of heterogeneous materials in the stress, we used the APSYS module of crosslig to simulate the impact of different polarization charges on luminous efficiency of InGaN/AlGaN MQWs LED, and compared the difference of quantum wells with different heights of energy band in the same proportion of the polarization charges by regulating the component of In. Besides, the paper combined output power, Internal Efficiency, I–V curve, and carrier distribution to discuss the luminous efficiency of InGaN/AlGaN MQWs LED under heterogeneous polarization filed respectively, and the influence of different injection currents on the LED performance.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124734689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Negative optical phenomena 负光学现象
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713575
Jingzhen Li, Hongyi Chen
{"title":"Negative optical phenomena","authors":"Jingzhen Li, Hongyi Chen","doi":"10.1109/AOM.2010.5713575","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713575","url":null,"abstract":"Negative refractive index meta-materials are new kinds of artificial materials having both negative permittivity and negative permeability. Some negative optical phenomena can be anticipated with negative index, such as inverse Doppler effect, anomalous Cerenkov radiation, and negative refraction. The peculiar properties of meta-materials have been experimentally confirmed, and have aroused strong concern these years. However, negative optical phenomena do not always occur in negative refractive index media. Here we review various negative optical phenomena of meta-materials and other materials. Our recent progress is also given.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127151179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband and quasi-omnidirectional antireflection Si subwavelength structure based on alumina nano-template directly formed on SiO2/Si 基于氧化铝纳米模板直接在SiO2/Si上形成的宽带准全向抗反射Si亚波长结构
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713597
R. Zhang, C. Zhao, B. Shao, J. Dong, J. Zhang, H. Yang
{"title":"Broadband and quasi-omnidirectional antireflection Si subwavelength structure based on alumina nano-template directly formed on SiO2/Si","authors":"R. Zhang, C. Zhao, B. Shao, J. Dong, J. Zhang, H. Yang","doi":"10.1109/AOM.2010.5713597","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713597","url":null,"abstract":"Wafer-scaled cost-effective technique for subwavelength structured (SWS) surface by means of anodic porous alumina masks directly formed on SiO2/Si substrates is demonstrated. Combined with ion beam etching and induced coupled plasma etching, SWS surface with a period of 100nm and a height of 200–300nm was achieved on 2 inch polished single crystalline Si wafer. A lower reflectivity below 6% was observed over broadband (350–1200nm) at broad view (0°–45°). Such surface should improve the performance of solar cells and detectors. The fabrication technique can be widely employed to other heterogeneous substrate and achieve SWS functional surface.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126334127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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