Xu Yi, Sun Hui-qing, Xiao Yong-neng, Han Shi-yang, Ke Fu
{"title":"偏振效应对InGaN/AlGaN MQWs LED发光效率的影响","authors":"Xu Yi, Sun Hui-qing, Xiao Yong-neng, Han Shi-yang, Ke Fu","doi":"10.1109/AOM.2010.5713524","DOIUrl":null,"url":null,"abstract":"polarization effect would form built-in polarization electric filed, leading to the bend of energy band, which influences the radiative recombination rate of the carries. Taking account of the difference of piezoelectric polarization effect of heterogeneous materials in the stress, we used the APSYS module of crosslig to simulate the impact of different polarization charges on luminous efficiency of InGaN/AlGaN MQWs LED, and compared the difference of quantum wells with different heights of energy band in the same proportion of the polarization charges by regulating the component of In. Besides, the paper combined output power, Internal Efficiency, I–V curve, and carrier distribution to discuss the luminous efficiency of InGaN/AlGaN MQWs LED under heterogeneous polarization filed respectively, and the influence of different injection currents on the LED performance.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED\",\"authors\":\"Xu Yi, Sun Hui-qing, Xiao Yong-neng, Han Shi-yang, Ke Fu\",\"doi\":\"10.1109/AOM.2010.5713524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"polarization effect would form built-in polarization electric filed, leading to the bend of energy band, which influences the radiative recombination rate of the carries. Taking account of the difference of piezoelectric polarization effect of heterogeneous materials in the stress, we used the APSYS module of crosslig to simulate the impact of different polarization charges on luminous efficiency of InGaN/AlGaN MQWs LED, and compared the difference of quantum wells with different heights of energy band in the same proportion of the polarization charges by regulating the component of In. Besides, the paper combined output power, Internal Efficiency, I–V curve, and carrier distribution to discuss the luminous efficiency of InGaN/AlGaN MQWs LED under heterogeneous polarization filed respectively, and the influence of different injection currents on the LED performance.\",\"PeriodicalId\":222199,\"journal\":{\"name\":\"Advances in Optoelectronics and Micro/nano-optics\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Optoelectronics and Micro/nano-optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AOM.2010.5713524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Optoelectronics and Micro/nano-optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AOM.2010.5713524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED
polarization effect would form built-in polarization electric filed, leading to the bend of energy band, which influences the radiative recombination rate of the carries. Taking account of the difference of piezoelectric polarization effect of heterogeneous materials in the stress, we used the APSYS module of crosslig to simulate the impact of different polarization charges on luminous efficiency of InGaN/AlGaN MQWs LED, and compared the difference of quantum wells with different heights of energy band in the same proportion of the polarization charges by regulating the component of In. Besides, the paper combined output power, Internal Efficiency, I–V curve, and carrier distribution to discuss the luminous efficiency of InGaN/AlGaN MQWs LED under heterogeneous polarization filed respectively, and the influence of different injection currents on the LED performance.