偏振效应对InGaN/AlGaN MQWs LED发光效率的影响

Xu Yi, Sun Hui-qing, Xiao Yong-neng, Han Shi-yang, Ke Fu
{"title":"偏振效应对InGaN/AlGaN MQWs LED发光效率的影响","authors":"Xu Yi, Sun Hui-qing, Xiao Yong-neng, Han Shi-yang, Ke Fu","doi":"10.1109/AOM.2010.5713524","DOIUrl":null,"url":null,"abstract":"polarization effect would form built-in polarization electric filed, leading to the bend of energy band, which influences the radiative recombination rate of the carries. Taking account of the difference of piezoelectric polarization effect of heterogeneous materials in the stress, we used the APSYS module of crosslig to simulate the impact of different polarization charges on luminous efficiency of InGaN/AlGaN MQWs LED, and compared the difference of quantum wells with different heights of energy band in the same proportion of the polarization charges by regulating the component of In. Besides, the paper combined output power, Internal Efficiency, I–V curve, and carrier distribution to discuss the luminous efficiency of InGaN/AlGaN MQWs LED under heterogeneous polarization filed respectively, and the influence of different injection currents on the LED performance.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED\",\"authors\":\"Xu Yi, Sun Hui-qing, Xiao Yong-neng, Han Shi-yang, Ke Fu\",\"doi\":\"10.1109/AOM.2010.5713524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"polarization effect would form built-in polarization electric filed, leading to the bend of energy band, which influences the radiative recombination rate of the carries. Taking account of the difference of piezoelectric polarization effect of heterogeneous materials in the stress, we used the APSYS module of crosslig to simulate the impact of different polarization charges on luminous efficiency of InGaN/AlGaN MQWs LED, and compared the difference of quantum wells with different heights of energy band in the same proportion of the polarization charges by regulating the component of In. Besides, the paper combined output power, Internal Efficiency, I–V curve, and carrier distribution to discuss the luminous efficiency of InGaN/AlGaN MQWs LED under heterogeneous polarization filed respectively, and the influence of different injection currents on the LED performance.\",\"PeriodicalId\":222199,\"journal\":{\"name\":\"Advances in Optoelectronics and Micro/nano-optics\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Optoelectronics and Micro/nano-optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AOM.2010.5713524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Optoelectronics and Micro/nano-optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AOM.2010.5713524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

极化效应会形成内置极化电场,导致能带弯曲,影响载体的辐射复合率。考虑到异质材料在应力下压电极化效应的差异,我们利用交联的APSYS模块模拟了不同极化电荷对InGaN/AlGaN MQWs LED发光效率的影响,并通过调节in的分量来比较相同极化电荷比例下不同能级高度的量子阱的差异。此外,结合输出功率、内部效率、I-V曲线和载流子分布,分别讨论了InGaN/AlGaN MQWs LED在非均质极化场下的发光效率,以及不同注入电流对LED性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polarization effect's impact on luminous efficiency in InGaN/AlGaN MQWs LED
polarization effect would form built-in polarization electric filed, leading to the bend of energy band, which influences the radiative recombination rate of the carries. Taking account of the difference of piezoelectric polarization effect of heterogeneous materials in the stress, we used the APSYS module of crosslig to simulate the impact of different polarization charges on luminous efficiency of InGaN/AlGaN MQWs LED, and compared the difference of quantum wells with different heights of energy band in the same proportion of the polarization charges by regulating the component of In. Besides, the paper combined output power, Internal Efficiency, I–V curve, and carrier distribution to discuss the luminous efficiency of InGaN/AlGaN MQWs LED under heterogeneous polarization filed respectively, and the influence of different injection currents on the LED performance.
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