MOCVD制备高质量GaN膜的几种方法

Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI:10.1109/AOM.2010.5713529

Li Guorui, Liang Xiaoyun

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引用次数: 1

摘要

金属有机化学气相沉积法(MOCVD)制备氮化镓薄膜是目前国际上广泛采用的方法。中国MOCVD生产的理念和生产设备与国际还存在差距，因此不具备国际竞争的优势。本文介绍了近年来利用MOCVD在蓝宝石表面生长GaN膜的一些研究成果。作者将根据工艺顺序对这些结果进行讨论，希望通过改进工艺来提高MOCVD GaN薄膜的质量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Some methods to make high quality GaN film by MOCVD

Production of GaN films by metal-organic chemical vapor deposition (MOCVD) is widely used way of the world. MOCVD production in China the concept and production equipment still have a gap with the international, so do not have the advantage of international competition. This article describes some results of GaN film grown on sapphire by MOCVD in recent year. author will discuss those results base on the order of process, hope to improve the quality of MOCVD GaN films by improve the process.

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Advances in Optoelectronics and Micro/nano-optics

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