发布求助
文献互助 智能选刊 最新文献

Advances in Optoelectronics and Micro/nano-optics最新文献

筛选
英文 中文
Infrared pulsed laser deposition of yttrium doped BSCCO superconducting films 红外脉冲激光沉积掺钇BSCCO超导薄膜
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713508
J. D. De Vero, G. Blanca, J. Vitug, W. Garcia, R. Sarmago
{"title":"Infrared pulsed laser deposition of yttrium doped BSCCO superconducting films","authors":"J. D. De Vero, G. Blanca, J. Vitug, W. Garcia, R. Sarmago","doi":"10.1109/AOM.2010.5713508","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713508","url":null,"abstract":"High T<inf>c</inf> superconducting Bi<inf>2</inf>Sr<inf>2</inf>Ca<inf>1−x</inf>Y<inf>x</inf>Cu<inf>2</inf>O<inf>8+δ</inf> (Bi-22Y2) with 0.25≤x≤0.49 were deposited on MgO (100) by infrared (1064 nm) pulsed laser deposition with subsequent heat treatments. As- deposited films were partially melted and subsequently annealed in ambient air. The as-deposited films exhibit spheriodal morphology but maintain the stoichiometry of the target. After heat treatments steps, relatively smooth and flat films were achieved. Grain boundaries become more apparent at higher yttrium doping. The films are highly c-axis oriented. The zero resistance temperature T<inf>c</inf> increases from 85 K to 90.5 K but drop with additional Y until 87 K. The highest critical current density obtained is 723.14 A/cm<sup>2</sup> at 70 K for 28% Y-doped sample under zero field.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"48 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129715572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED 生长温度对alainp红色LED中P-GaP层掺杂特性的影响
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713514
Shaojun Luo, J. Deng, Jian-jun Li, L. Gao, Rui Chen, Jun Han
{"title":"The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED","authors":"Shaojun Luo, J. Deng, Jian-jun Li, L. Gao, Rui Chen, Jun Han","doi":"10.1109/AOM.2010.5713514","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713514","url":null,"abstract":"The doping characteristics of P-GaP layer in AlGaInP red LED has been studied, by changing the low pressure metal organic chemical vapor deposition (LP-MOCVD) system's growth temperature. Several epitaxial samples, which grown at different temperatures of LP-MOCVD, have been tested by ECV system. The results have been shown,that the doping density and the surface of GaP layer and the characteristics of the LED changed with the growth temperature of GaP layers. This experience can be used for the fabrication of high-performance AlGaInP red LED","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129948015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compensation of hysteresis for calibrator of giant magnetostrictive actuator based on preisach model 基于预估模型的超磁致伸缩作动器校准器滞回补偿
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713592
Wang Lei, S. Fen
{"title":"Compensation of hysteresis for calibrator of giant magnetostrictive actuator based on preisach model","authors":"Wang Lei, S. Fen","doi":"10.1109/AOM.2010.5713592","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713592","url":null,"abstract":"A calibrator based on the giant magnetostrictive actuator is most suitable to calibrate accuracy and frequency response of high-precision displacement sensor, because giant magnetostrictive actuator has some unique characteristics, such as big output force, high precision micro-displacement whose accuracy can be in nm and high frequency response. But the relation between input magnetic field and output micro-displacement of giant magnetostrictive actuator because of hysteresis will be nonlinearity, special in high frequency response. The classical Preisach model had been used to approximate the hysteresis of the giant magnetostrictive actuator in this paper. And we have applied the inverse preisach operator to compensate hysteresis of actuator in a feedback control loop for improving the output characteristic of giant magnetostrictive actuator. Through emulating, it had been verified that the effect of hysteresis had been attenuated obviously. Through calibrating a high-precision sensor, we could verify that the giant magnetostrictive actuator have higher precise position in high frequency response after compensating hysteresis.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125544992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulations of SP laser based on metal cavity array by toy model 基于金属腔阵列的SP激光器的玩具模型模拟
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713558
Jiaqi Li, Yuan Zhang, T. Mei
{"title":"Simulations of SP laser based on metal cavity array by toy model","authors":"Jiaqi Li, Yuan Zhang, T. Mei","doi":"10.1109/AOM.2010.5713558","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713558","url":null,"abstract":"In this paper, the permittivity imaginary part of gain material considered is dispersive, and by this model, the SP laser phenomenon based on a square array of rectangular cavities cut into metal substrate has been investigated. Both of the two main resonant modes of the proposed structure can be used to realize SP laser while the working mechanism is different. We study the origin of these differences, and propose an efficient design that exploits them.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124699940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High efficiency double-layer white polymer light-emitting diode 高效率双层白色聚合物发光二极管
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713548
Q. Niu, Yong Zhang, Yongli Wang, Xin Wang
{"title":"High efficiency double-layer white polymer light-emitting diode","authors":"Q. Niu, Yong Zhang, Yongli Wang, Xin Wang","doi":"10.1109/AOM.2010.5713548","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713548","url":null,"abstract":"In this presentation, efficient white polymer-light-emitting diodes have been fabricated with double emissive layers. The device structure consists of ITO/poly(ehtlenedioxythiophene): poly(styrene sulfonic acid) (PEDOT: PSS) / poly(N-vinylcarbazole) (PVK) /phenyl-substituted PPV derivative (P-PPV)/poly(9,9-dioctylfluorene) (PFO)/Ba/Al. By tuning the thickness of the emissive layers, white light was obtained. In EL spectra of the white light, the full width at half maximum (FWHM ) of the green band from P-PPV increased from 79 nm to 110 nm. Therefore, the EL spectra can cover the whole visible area. The 1931 CIE coordinates of the white light emission obtained were (0.31, 0.36). The maximum luminous efficiency is 3.8cd/A.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127880273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly resonant positive and negative metamaterials 高共振正、负超材料
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713567
Jinhui Shi, Zheng Zhu, C. Guan, Yuxiang Li, Zhengping Wang
{"title":"Highly resonant positive and negative metamaterials","authors":"Jinhui Shi, Zheng Zhu, C. Guan, Yuxiang Li, Zhengping Wang","doi":"10.1109/AOM.2010.5713567","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713567","url":null,"abstract":"We studied highly trapped-mode resonant feature in planar positive and negative metamaterials with broken symmetry theoretically. The transmission and reflection spectra of the metamaterials have been used to show resonant response to the incident electromagnetic wave under normal incidence and the quality factor is strongly dependent on geometrical parameters of metamaterials.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128024269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of P type doping in AlGaInP cladding layer of high brightness red LED 高亮度红色LED熔覆层中P型掺杂的研究
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5767156
L. Gao, J. Deng, Shaojun Luo, Rui Chen, Jian-jun Li, Jun Han
{"title":"Study of P type doping in AlGaInP cladding layer of high brightness red LED","authors":"L. Gao, J. Deng, Shaojun Luo, Rui Chen, Jian-jun Li, Jun Han","doi":"10.1109/AOM.2010.5767156","DOIUrl":"https://doi.org/10.1109/AOM.2010.5767156","url":null,"abstract":"The substrate angle and impurity flow restrictions on doping concentration of P-type AlGaInP cladding layer have been studied by using ECV( Electrochemical Capacitance Voltage) measurement. The experimental results show that the angle of 15° to the substrate than 2° is easier to achieve high doping concentration with Mg impurity at the same condition, furthermore, the doping concentration increase with increasing the doping flows while the source flows of Mg between 7.5 sccm-30 sccm. The performances of the HB red LED are improved based on the optimized the condition of the epitaxial growth of Ptype AlGaInP cladding layer.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127223663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Factors influencing the resolution of the confocal laser scanning optical microscope 影响共聚焦激光扫描光学显微镜分辨率的因素
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713585
Min Chang, Ping Zhang, Jun Sun, Xuedian Zhang
{"title":"Factors influencing the resolution of the confocal laser scanning optical microscope","authors":"Min Chang, Ping Zhang, Jun Sun, Xuedian Zhang","doi":"10.1109/AOM.2010.5713585","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713585","url":null,"abstract":"High-resolution confocal laser microscopy is an intensely active field in the modern biological and medical sciences. This paper describes the imaging principle of the confocal laser scanning microscope, discusses various factors that influence the resolution of the confocal laser scanning microscope, including the diameter of the pinhole in the front of the detector, stray light and the numerical aperture. By using the theory of diffraction optics, this paper reveals the reason why confocal imaging achieves a super resolution capability. Finally, a novel method of reducing the stray light and increasing the resolution are proposed through an experiment.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129434797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of Au-assisted GaAs/AlGaAs core-shell nanowires by metalorganic chemical vapor deposition 金属有机化学气相沉积法生长au辅助GaAs/AlGaAs核壳纳米线
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713534
Jing-Wei Guo, Hui Huang, Xin Yan, Ran Li, Minjia Liu, X. Ren, Shiwei Cai, Wei Wang, Yongqing Huang, Qi Wang, Xia Zhang
{"title":"Growth of Au-assisted GaAs/AlGaAs core-shell nanowires by metalorganic chemical vapor deposition","authors":"Jing-Wei Guo, Hui Huang, Xin Yan, Ran Li, Minjia Liu, X. Ren, Shiwei Cai, Wei Wang, Yongqing Huang, Qi Wang, Xia Zhang","doi":"10.1109/AOM.2010.5713534","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713534","url":null,"abstract":"Growth and characterization of GaAs/AlGaAs core-shell nanowires (NWs) are reported. Using the VLS (vapor-liquid-solid) mechanism, GaAs NWs oriented perpendicularly to the substrate were grown on GaAs (111) B substrate. Using the metalorganic chemical vapor deposition (MOCVD) growth mode, AlGaAs shells were grown on GaAs NWs sidewalls. Single crystal and pure zinc-blende structure are achieved for GaAs NWs. It is founded that the zinc-blende phase is also the dominant phase for GaAs/AlGaAs core-shell NWs with some defects. This study on GaAs/AlGaAs core-shell NWs has many potential applications for nano-electronic and nano-optoelectronic devices.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129558871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of drying process on photon-polymerized microstructures in resists 干燥过程对光刻胶中光子聚合微结构的影响
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713579
Quan Sun, Hidenori Asahi, N. Murazawa, K. Ueno, H. Misawa
{"title":"Effect of drying process on photon-polymerized microstructures in resists","authors":"Quan Sun, Hidenori Asahi, N. Murazawa, K. Ueno, H. Misawa","doi":"10.1109/AOM.2010.5713579","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713579","url":null,"abstract":"We present the fabrication of photonic microstructures using femtosecond laser direct writing technique in resist. The effect of drying process on photo-polymerized microstructures is investigated. We find that shrinkage mostly arises during the drying process.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"40 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121552224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信