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Dynamic display of square-aperture planar microlens arrays 方孔径平面微透镜阵列的动态显示
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713536
Fengjun Zhang, Xiaomei Chen, Zhifang Zhao, Jie Chen, Sumei Zhou, Xiaoping Jiang, Desen Liu
{"title":"Dynamic display of square-aperture planar microlens arrays","authors":"Fengjun Zhang, Xiaomei Chen, Zhifang Zhao, Jie Chen, Sumei Zhou, Xiaoping Jiang, Desen Liu","doi":"10.1109/AOM.2010.5713536","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713536","url":null,"abstract":"In this paper, photolithography photoetching and thermal ion-exchanging technology are used to fabricate the square-aperture microlens array. This new element with high filling factor will meet with the special applications such as gathering, shaping, coupling, interlinking of optical information and so on. With further studying, the micro-aperture of mask shows the amplification effect of micrograph by microlens array and the relationship between the structure parameters of microlens array, parameters of micro-structure and the speed, direction of movement, magnification of micro-graphic array on the base of the principle. Therefore, amplification of micrograph, 3-dimension dynamic display would be available.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134589157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-performance organic photovoltaic device using a new amorphous molecular material of bis(4-(N-(l-naphthyl)phenylamino) phenyl)fumaronitrile 高性能有机光伏器件采用新型无定形分子材料双(4-(N-(l-萘基)苯胺)苯基)富马腈
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713602
Shun‐Wei Liu, C. Lee, Wei-Cheng Su, Chi-feng Lin, Jia-Ching Huang, Chin‐Ti Chen, Jiu-Haw Lee
{"title":"High-performance organic photovoltaic device using a new amorphous molecular material of bis(4-(N-(l-naphthyl)phenylamino) phenyl)fumaronitrile","authors":"Shun‐Wei Liu, C. Lee, Wei-Cheng Su, Chi-feng Lin, Jia-Ching Huang, Chin‐Ti Chen, Jiu-Haw Lee","doi":"10.1109/AOM.2010.5713602","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713602","url":null,"abstract":"An efficient organic photovoltaic devices (OPVs) have been realized by using a new amorphous absorption material, bis(4-(N-(l-naphthyl)phenylamino) phenyl)fumaronitrile (NPAFN). NPAFN exhibits a hole mobility of 0.07 cm2/Vs as determined by the thin-film transistor. The structure of double-heterojunction OPV, ITO/NPAFN/fulerene/bathocuproine/Al, shows high performance with open circuit voltage of 0.98 V, short current density of 3.72 mA/cm2, and power conversion efficiency of 1.72% under air-mass (AM) 1.5 G illumination at an light intensity of 100 mW/cm2.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129103081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of transmission spectrum of step-changed cascaded LPG and its applications in multi-channel filter 阶跃级联LPG传输谱分析及其在多路滤波器中的应用
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713518
Xin Chen, Jing Nie, Zhongyi Cui, Weiliang Chen, Weiping Liu
{"title":"Analysis of transmission spectrum of step-changed cascaded LPG and its applications in multi-channel filter","authors":"Xin Chen, Jing Nie, Zhongyi Cui, Weiliang Chen, Weiping Liu","doi":"10.1109/AOM.2010.5713518","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713518","url":null,"abstract":"The cascaded step-changed LPGs transmission spectra are calculated and simulated and the results demonstrate that the transmission spectral profile can be tailored into a double rejection band filter, with the parameters of the LPGs being adjusted, which can constitute the multi-channel filter used in coarse wavelength division multiplexing.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123647985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of redshift in InAs/InGaAs quantum dot with Fourier-transform based k·p method 基于傅里叶变换的k·p方法分析InAs/InGaAs量子点的红移
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713522
Q. J. Zhao, T. Mei, D. Zhang, O. Kurniawan
{"title":"Analysis of redshift in InAs/InGaAs quantum dot with Fourier-transform based k·p method","authors":"Q. J. Zhao, T. Mei, D. Zhang, O. Kurniawan","doi":"10.1109/AOM.2010.5713522","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713522","url":null,"abstract":"We present a theoretical study on mechanism of redshift in InAs/InxGa(1−x)As quantum dots, of which redshift is realized via controlling In composition x and lower confining layer thickness t to ease up the enlargement of band gap due to strain. Introducing In component in the confining layer material leads to significant redshift but thermal quenching due to waning band discontinuity, therefore proper In composition x and thicker lower confining layer are adopted to balance this contradictory. Both the band-edge profiles and ground-state energies indicate that the adjustable ability of strain on redshift decreases as increase of In component. In component modified band edges of confining layer material may also make a contribution on redshift. The most proper range of In composition for obvious redshift is 0≤ x ≤0.33 to avoid size fluctuations and small thermal quenching luminescense.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115714529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superlens for lithography 光刻用超级透镜
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713599
Y. Zhang, Daohua Zhang, M. Fiddy
{"title":"Superlens for lithography","authors":"Y. Zhang, Daohua Zhang, M. Fiddy","doi":"10.1109/AOM.2010.5713599","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713599","url":null,"abstract":"In this paper, we have examined the possibilityof using a planar negative index lens in lithography applications.We numerically studied the field patterns generated by a PEC and Cr mask propagating through a negative index slab to form a super-resolved image of the mask at the image plane. We discuss the advantages and disadvantages of this for next generation lithography.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"57 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121002617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement of the crystal quality of AlInN by using the patterned sapphire substrate 利用图案蓝宝石衬底改善AlInN的晶体质量
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713538
Hailong Wang, Yi’an Yin, Shuti Li
{"title":"Improvement of the crystal quality of AlInN by using the patterned sapphire substrate","authors":"Hailong Wang, Yi’an Yin, Shuti Li","doi":"10.1109/AOM.2010.5713538","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713538","url":null,"abstract":"Lattice-matched (x =0.18) AlxIn1− xN epilayers were grown on GaN/ patterned sapphire substrate (PSS ) (0 0 0 1) and GaN/ unpatterned sapphire substrate (UPSS) (0 0 0 1) by metal-organic chemical vapor deposition (MOCVD). The quality of the grown AlInN epilayers on the PSS and UPSS were compared. Structural characteristics and surface morphology optical properties of the AlInN epilayers were investigated using double crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). It is seen from the DCXRD rocking spectrum that the full width at half maximum (FWHM) of the AlInN grown on PSS was 260 arcsec which is less than UPSS value. The lower value of FWHM indicates that the crystalline quality of the AlInN epilayers grown on PSS is improved compared to AlInN grown on UPSS. It is slso clearly seen from the AFM images that the dislocation density and root mean square (RMS)is less for the AlInN grown on PSS. The above results indicate that the PSS could improve the crystalline and surface morphology greatly.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121319294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Refractive index change in porous silicon after detaching from the substrate 多孔硅脱离衬底后折射率的变化
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713578
Noha Gaber, A. Shaarawi, D. Khalil
{"title":"Refractive index change in porous silicon after detaching from the substrate","authors":"Noha Gaber, A. Shaarawi, D. Khalil","doi":"10.1109/AOM.2010.5713578","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713578","url":null,"abstract":"Porous silicon technology offers a simple, wide dynamic range technique for tuning the refractive index of silicon in multilayer structures. However, the refractive index values are very sensitive to fabrication parameters, oxidation and other factors. In this work we investigate some possible causes of refractive index change in porous silicon (PS) fabricated by electrochemical etching of silicon in hydrofluoric acid (HF). The index change is monitored through the wavelength shift in the response of Bragg Reflectors Multilayer Porous Silicon. A shift in the response towards shorter wavelengths was observed after the porous silicon thin film was detached from the silicon substrate. This shift is attributed in part to oxidation due to PS large surface area, and also to stresses inside the material after releasing the thin film from the substrate; these factors have been studied and possible solutions have been suggested.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126269327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Research for equilateral triangle optical resonators 等边三角形光谐振器的研究
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713566
Wei-Cong Yan, Zhiyou Guo, N. Zhu
{"title":"Research for equilateral triangle optical resonators","authors":"Wei-Cong Yan, Zhiyou Guo, N. Zhu","doi":"10.1109/AOM.2010.5713566","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713566","url":null,"abstract":"An important feature for the Micro-resonator is the quality factor. This Paper presents a new equilateral triangle micro-resonator (ETR) design, simulates the spectral response by FDTD method, then calculates the quality factor (Q factor), and compare the results with the micro-ring resonator (MR) with similar footprint. The simulation results show that the quality factor of ETR at the side length of 6um is more than 10 times larger than that of the MR which has the same area as ETR on the same material platform. We also show that the output of an ETR with an opening to the output waveguide is more efficient, besides the increasing of quality factor by 26% at a wavelength of 1.48um.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122290305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effects of different coverage of Nitrogen adsorbed on wurtzite ZnO(0001) surface 氮在纤锌矿ZnO(0001)表面吸附的影响
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713528
Dong-Xing Cao, Zhiyou Guo, Xiao-qi Gao, Yu-Fei Zhang, Guoguang Ye
{"title":"The effects of different coverage of Nitrogen adsorbed on wurtzite ZnO(0001) surface","authors":"Dong-Xing Cao, Zhiyou Guo, Xiao-qi Gao, Yu-Fei Zhang, Guoguang Ye","doi":"10.1109/AOM.2010.5713528","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713528","url":null,"abstract":"The adsorption of nitrogen on wurtzite ZnO (0001) surface were studied by First-principles. Different adsorption sites and the effect of different coverages have been considered. The clean ZnO (0001) surface and different coverages of Nitrogen adsorbed on wurtzite ZnO(0001) surface show n-type conduction. We found that the H3 adsorption site is energy-favored in each coverage considered, and that 0.25 and 0.5ML N adsorption leads to an indirect band gap semiconducting surface. Analyzing the electronic structures and the density of states of the adsorbed systems, we proposed that the strong hybridization between the Zn-3d and N-2p results in the consequent saturation of Zn dangling bonds and the formation of a polarized covalent Zn-N bonding. Our study may be able to provide a guidance for the growth of N-doped ZnO.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124107185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semitransparent low-bandgap polymer solar cells with high transmisision in green-wavelength range 在绿色波长范围内具有高透射率的半透明低带隙聚合物太阳能电池
Advances in Optoelectronics and Micro/nano-optics Pub Date : 2010-12-01 DOI: 10.1109/AOM.2010.5713526
Yongbing Long
{"title":"Semitransparent low-bandgap polymer solar cells with high transmisision in green-wavelength range","authors":"Yongbing Long","doi":"10.1109/AOM.2010.5713526","DOIUrl":"https://doi.org/10.1109/AOM.2010.5713526","url":null,"abstract":"Optical modeling based on transfer matrix method (TMM) is employed to investigate the performance of the semitransparent low-bandgap polymer solar cells (PSCs), which are constructed by sandwiching the polymer active layer between an indium tin oxide (ITO) electrode and a thin Ag electrode. It is revealed that the efficiency of the device is more than 2.5% with high transmission across the visible spectrum. In addition, by capping a 40nm-thick MoO3 layer on the thin Ag electrode, the transmission at the green-wavelength range (500–570nm) can be increased to over 70%. Furthermore, comparison between the devices with low-bandgap polymer and high-bandgap polymer demonstrates semitransparent PSCs with transmission window at the red and green part of the spectrum can be achieved by selecting suitable active layer material.","PeriodicalId":222199,"journal":{"name":"Advances in Optoelectronics and Micro/nano-optics","volume":"1994 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131034251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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