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2019 IEEE 16th International Conference on Group IV Photonics (GFP)最新文献

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Mid-Infrared Silicon Waveguide-Based Bolometer 基于中红外硅波导的测热计
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853919
W. Cao, A. Khokhar, G. Mashanovich, O. Muskens, M. Nedeljkovic, A. Osman, J. S. Penadés, Z. Qu, Yangbo Wu
{"title":"Mid-Infrared Silicon Waveguide-Based Bolometer","authors":"W. Cao, A. Khokhar, G. Mashanovich, O. Muskens, M. Nedeljkovic, A. Osman, J. S. Penadés, Z. Qu, Yangbo Wu","doi":"10.1109/GROUP4.2019.8853919","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853919","url":null,"abstract":"We demonstrate the first waveguide-based bolometers on Silicon-on-Insulator (SOI) platform for mid-infrared (MIR) wavelengths, which use plasmonic antennas as absorbing elements. The bolometer achieves a sensitivity of 0.80 % change in resistance per milliwatt of input power at the 3.8 μm wavelength.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124659291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Tunable Slow-Light in Silicon Photonic Subwavelength Grating Waveguides 硅光子亚波长光栅波导中的可调谐慢光
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/group4.2019.8853894
Antoine Gervais, Philippe Jean, S. Larochelle, W. Shi
{"title":"Tunable Slow-Light in Silicon Photonic Subwavelength Grating Waveguides","authors":"Antoine Gervais, Philippe Jean, S. Larochelle, W. Shi","doi":"10.1109/group4.2019.8853894","DOIUrl":"https://doi.org/10.1109/group4.2019.8853894","url":null,"abstract":"Slow-light is experimentally demonstrated in subwavelength grating waveguides integrated on a silicon photonic chip. At the band-edge, a group index up to 30 is measured. We show that the band-edge wavelength varies linearly with the subwavelength grating period and can be shifted by thermal tuning.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"1949-209X 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130475899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors 盖革模式硅基锗单光子雪崩二极管探测器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926108
J. Kirdoda, D. Dumas, K. Kuzmenko, P. Vines, Z. Greener, R. Millar, M. Mirza, G. Buller, D. Paul
{"title":"Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors","authors":"J. Kirdoda, D. Dumas, K. Kuzmenko, P. Vines, Z. Greener, R. Millar, M. Mirza, G. Buller, D. Paul","doi":"10.1109/GROUP4.2019.8926108","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926108","url":null,"abstract":"Ge-on-Si single-photon avalanche diode (SPAD) detectors have demonstrated a high single-photon detection efficiency of 38% at a wavelength of 1310 nm when operated at a temperature of 125 K. These devices exhibit reduced afterpulsing compared to InGaAs/InP SPADs under nominally identical operating conditions.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129880547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical Kerr Nonlinearity of CMOS Compatible PECVD Deposited Si-Rich-Nitride (SRN) CMOS兼容PECVD沉积富硅氮化物(SRN)的光学Kerr非线性
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926104
H. Cong, Qi Feng, Jieyin Zhang, Wenqi Wei, Ting Wang, Jianjun Zhang
{"title":"Optical Kerr Nonlinearity of CMOS Compatible PECVD Deposited Si-Rich-Nitride (SRN)","authors":"H. Cong, Qi Feng, Jieyin Zhang, Wenqi Wei, Ting Wang, Jianjun Zhang","doi":"10.1109/GROUP4.2019.8926104","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926104","url":null,"abstract":"CMOS compatible silicon-rich-nitride (SRN) with high reflective index is deposited by plasma enhanced chemical vapor deposition. The Kerr nonlinearity n2 of SRN waveguide is measured and extracted with a value of 2.8×10−17 m2W−1, which is one order of magnitude higher than Si waveguides.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126202348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra Low-Loss Silicon Waveguides for 200 mm Photonics Platform 200mm光子平台超低损耗硅波导
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853923
C. Bellegarde, S. Bernabé, S. Brision, B. Charbonnier, D. Fowler, S. Garcia, P. Grosse, J. Hartmann, A. Myko, E. Pargon, C. Petit-Etienne, K. Ribaud, C. Sciancalepore, B. Szelag, Q. Wilmart, L. Youssef
{"title":"Ultra Low-Loss Silicon Waveguides for 200 mm Photonics Platform","authors":"C. Bellegarde, S. Bernabé, S. Brision, B. Charbonnier, D. Fowler, S. Garcia, P. Grosse, J. Hartmann, A. Myko, E. Pargon, C. Petit-Etienne, K. Ribaud, C. Sciancalepore, B. Szelag, Q. Wilmart, L. Youssef","doi":"10.1109/GROUP4.2019.8853923","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853923","url":null,"abstract":"We demonstrate ultra-low optical losses in silicon waveguide by applying a smoothing annealing with no morphological deformation. We reach record-low losses at 1310nm with 0.1 dB/cm in single mode waveguide, while the performances of the other devices of the platform are preserved.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115629579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Contra-Directional Couplers as Pump Rejection and Recycling Filters for on-Chip Photon-Pair Sources 作为片上光子对源泵浦抑制和回收滤波器的反向耦合器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926116
Abdelrahman E. Afifi, Mustafa Hammood, N. Jaeger, S. Shekhar, Jeff F. Young, L. Chrostowski
{"title":"Contra-Directional Couplers as Pump Rejection and Recycling Filters for on-Chip Photon-Pair Sources","authors":"Abdelrahman E. Afifi, Mustafa Hammood, N. Jaeger, S. Shekhar, Jeff F. Young, L. Chrostowski","doi":"10.1109/GROUP4.2019.8926116","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926116","url":null,"abstract":"Contra-directional couplers are proposed as optical pump reject filters with the potential to achieve over 100 dB extinction ratios for on chip photon-pair sources. A scheme for these filters to enable reusing the pump laser for multiple microring resonator, photon-pair sources is presented.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122939728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Molecular Fingerprint Sensing using Ge-on-Si Waveguides 基于硅基锗波导的分子指纹传感
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926107
R. Millar, U. G. K. Gallacher, M. Sorel, D. Paul, L. Baldassarre, M. Ortolani
{"title":"Molecular Fingerprint Sensing using Ge-on-Si Waveguides","authors":"R. Millar, U. G. K. Gallacher, M. Sorel, D. Paul, L. Baldassarre, M. Ortolani","doi":"10.1109/GROUP4.2019.8926107","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926107","url":null,"abstract":"Germanium-on-silicon, mid-infrared waveguides are used to demonstrate molecular fingerprint sensing of poly(methyl methacrylate) between 7.5 and 10 μm wavelength. The results are compared to Fourier transform infrared spectroscopy measurements, highlighting the potential of the platform for the identification of analytes.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123200878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Germanium Photodetectors with 60-nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement across L-Band 60纳米吸收覆盖扩展和l波段量子效率提高的锗光电探测器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853916
Xin Guo, K. Lee, Yiding Lin, D. Ma, J. Michel, C. S. Tan, Hong Wang, Rui‐Tao Wen, Jin Zhou
{"title":"Germanium Photodetectors with 60-nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement across L-Band","authors":"Xin Guo, K. Lee, Yiding Lin, D. Ma, J. Michel, C. S. Tan, Hong Wang, Rui‐Tao Wen, Jin Zhou","doi":"10.1109/GROUP4.2019.8853916","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853916","url":null,"abstract":"Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ∼2× enhancement on the quantum efficiency across the L-band.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123923067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared 中红外锗硅波导损耗的侧壁依赖性研究
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8925756
U. Griskeviciute, K. Gallacher, R. Millar, D. Paul, Iain MacGilp
{"title":"Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared","authors":"U. Griskeviciute, K. Gallacher, R. Millar, D. Paul, Iain MacGilp","doi":"10.1109/GROUP4.2019.8925756","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8925756","url":null,"abstract":"Measurements of sidewall roughness by atomic force microscopy has been used to understand the waveguides losses of Ge-on-Si mid-infrared rib waveguides. Simulations indicate the measured roughness is well below values corresponding to the measured losses indicating sidewall roughness scattering is not the dominant loss mechanism.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132340161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-Volatile Indium Tin Oxide Electro-Optic Switch 非挥发性氧化铟锡电光开关
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8925782
J. Parra, I. Olivares, A. Brimont, P. Sanchis
{"title":"Non-Volatile Indium Tin Oxide Electro-Optic Switch","authors":"J. Parra, I. Olivares, A. Brimont, P. Sanchis","doi":"10.1109/GROUP4.2019.8925782","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8925782","url":null,"abstract":"A 9.9-μm-long non-volatile silicon electro-optic switch is proposed based on the utilization of indium tin oxide (ITO) as a floating gate and by exploiting the ITO epsilon-near-zero (ENZ) regime in the telecom C-band.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128450916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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