非挥发性氧化铟锡电光开关

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8925782

J. Parra, I. Olivares, A. Brimont, P. Sanchis

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引用次数: 0

摘要

利用氧化铟锡(ITO)作为浮栅，利用其在电信c波段的epsilon-near-zero (ENZ)特性，提出了一种9.9 μm长的非易失性硅电光开关。

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Non-Volatile Indium Tin Oxide Electro-Optic Switch

A 9.9-μm-long non-volatile silicon electro-optic switch is proposed based on the utilization of indium tin oxide (ITO) as a floating gate and by exploiting the ITO epsilon-near-zero (ENZ) regime in the telecom C-band.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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